SILICON SIGNAL DIODES 100 MA TYPES BV lm @ 25C Max. Ve Max. Co ter Package Package (1SEC) Outline Outline Number Part Number @ 100LA @ DV Min. (V) tray |] @ Va) (Vv) | @tr ima) PF 1N914 25 30 1INS14A 25 20 1N914B 25 20 1N916 25 20 1IN916A 25 20 1N916B 25 20 1N4148* 25 20 1N4149 25 20 1N4151 50 50 1N4152 50 30 1N4153* 50 50 1N4154 25 1N4305 50 1N4444 50 1N4446 20 1N4447 20 1N4448 20 1N4449 20 1N4454* 50 1N4531* 20 1N4532 50 1N4533 30 1N4534 50 1N4536 25 4N4727 20 1N4863 50 DA1701 30 DA1702 30 DA1703 30 DA1704 20 MA1701 30 MA1702 30 MA1703 30 D034 MA1704 20 0034 D2800 2 DO35 DZ805 12 D035 Dz806 22 D035 pb DO35 0035 0035 D035 D035 DO35 DO35 D035 D035 D035 D035 DO35 D035 D035 DO35 DO35 DO35 DO35 DO35 D034 D034 D034 D034 D034 D035 D035 D035 DO35 D035 D035 D034 D034 WINF]HLAPOWlM/]/] MBE ININ IN BIN [MOLE IN TEIN TINO TRIN [M(B ID [OLD RLS DE104 . DO35 DE110 D035 DE111 a DO35 DE112 ol D035 DE113 a D035 DE114 D035 DE115 DO35 * JAN and JANT X types available 1 Measured at 5LLA 119Silicon Diodes i? G3 1N914,A,B 1N916,A,B 1N4148,49 | This family of General Electric silicon signal diodes are very high speed switching diodes for computer circuits and general purpose applica- tions. These diodes incorporate an oxide passi- vated planar structure. This structure makes possible a diode having high conductance, fast recovery time, low leakage, and low capacitance combined with improved uniformity and relia- bility. These diodes are contained in two different packages; double heat sink miniature package, and milli-heat sink package. They are electrically the same as their equivalent types in each of the two different packages (see page two for groupings of elec- trically equivalent types in each of the two packages). PLANAR EPITAXIAL PASSIVATED with Controlled Conductance .0324.002 oa .0322 002 DIA J 0.100 155 w1 250 6.090 1.250 1.250 740 1250 oze 0.120 | ooze | 180 a MAX 18. MAX O18 Ool8 [ 4 0060 os O75 co) 2.960 co (O75 0.055 060 be CATHODE END NOTE: ALL DIMENSIONS IN INCHES CATHODE END NOTE: ALL DIMENSIONS IN INCHES Dissipation: 500mW @ 25C free air Derate: 2.85mW/C for temp. above 25C amb. based on max. Tz = 200C Dissipation: 500mW @ 25C free air Derate: 2.85mW/C for temp. above 25C amb. based on max. Tz = 200C STEADY HEATSINK STATE POWER Reverse Recavery Time of 2 nanoseconds maximum PACING THERMAL DISSIPATION FROM ENC RESISTANCE AT 25C mW . . OF DIO! C/mW {NOTE 2) Reverse Recovery Time of 4 nanoseconds maximum BODY (NOTE 1) MHD DHD | MHD DHI Capacitance of 2 pF maximum D 062 = 4.230 .250 | 760 700 Capacitance of 4 pF maximum .250 | .319 319 | 550 550 -500 438 .438 | 400 400 Power Dissipation to 500 mW Power Dissipation to 250 mW NOTE 1 See Figure 7 for thermal resist- ance for short pulses. This power rating is based on a maximum junction temperature of 200C. Meets ail MIL-S-19500C requirements oe Figure 1 2051N914, A, B 1N4154 1N4536 1N916, A, B 1N4446-49 1N4148, 49 1N4531 absolute maximum ratin Qs: (25C) (unless otherwise specified) Voltage MHD & DHD MHD & DHD Reverse 15 25 Volts Current Average Rectified 150 150 mA Recurrent Peak Forward 450 450 mA Forward Steady-State DC 200 200 mA Peak Forward Surge (lusec. pulse) 2000 2000 mA Power Dissipation 500 500 mW Temperature Operating < 65 to +200 C Storage 65 to +200 C electrical characteristics: (25C) (unless otherwise specified) a Forward Maximum Reverse Minimum Voltage Current, Ix / Breakdown _y si .? te. v. Type Voltage : - 20V . 75V a 100A [ Vv; . * - : @ 100 " * asec | 130 | 25C Volts mA v nA BA pA pF ons Vv IN9T4 1N4148 100 10 1.0 25 50 5 4 4 1N4531 IN914A 1N4446 100 20 1.0 25 50 5 4 4 IN914B 5 0.620,72 w 1N4448 100 100 1.0 { 25 50 5 4 4 2.5 IN916 1N4149 100 10 1.0 25 50 5 2 4 INSI6A 1N4447 100 20 1.0 25 50 5 2 4 1N916B 5 | ~0.63-0.73 1Naaa9 100 } 3 | 10 t 25 50 5 2 4 2.5 100 100 \asae 35 @ 5uA 30 1.0 @ 25V @ 25V 4 2 *Except as noted. NOTES (1) Maximum Capacitance is measured on Boonton model 75A capacitance bridge at a signal level of 50 mV at Vr =0 (2) Maximum Reverse Recovery Time, Ir = 10mA, Vr = 6V, Ri = 1000, Recovery to 1.0mA (Figure 6) (3) Maximum Forward Recovery Voltage, 50mA peak square wave, 0.1 usec. pulse width, 5 to 100 kHz repeti- tion rate, generator rise time (tr) = 30nsec. (4) Also 3uA at 20 V at 100C 100 60 40) TYPICAL FORWARD VOLTAGE MEASURED 25 +3 SEC AFTER APPLICATION OF CURRENT ny 2 290 w IN9I4,A, IN9I6,A,8 FORWARD CURRENT Ir, -mA n B DOL 25C IN4149 -85C IN4446 Al IN4447 08 Naas IN4449 06 IN453] 04 02 2 4 6 8 Lo 12 1.4 FORWARD VOLTAGE -V_ ~VOLTS Figure 2 206 100000 REVERSE CURRENT-nA TYPICAL REVERSE t0000 1000 100 40 60 80 REVERSE VOLTAGE Vde Figure 3 CHARACTERISTIC c) INSI4,4,8 INSI6,A,B IN4I48 IN4I49 (N4446 IN4447 (N4448 IN4449 IN4531 1N4536 100 1202,000 1N914, A, B 1N4154 1N4536 1N916, A, 3 1N4446-49 1,000 too 1N4148, 49 1N4531 400 200 TYPICAL REVERSE CURRENT VS. TEMPERATURE ALL TYPES 100 80 INSI4.A,B oo 60 IN148 IN4I54 o 40 IN4446 IN4448 TYPICAL CAPACITANCE _ vs. 5 REVERSE VOLTAGE a 20 us IN914,A,B N IN9I6, A,B INSI6,A,8 a 10 414 IN4149 8 INalae IN4447 = IN4149 INaaa7 x 6 IN4 446 g IN4447 4 iN4448 H IN4449 IN453! 2 IN45 36 \ 8 6 4 Ke J \ 10 100 2 Vp - VOLTS Figure 5 12 |.0 } MAXIMUM TRANSIENT fl . , pt LA THERMAL RESISTANCE 1 VW ~! 1 Y = (HEATSINK SPACING 0.250 L, PLANAR ONGER | + / FROM END OF DIODE BODY) TEST 9 | 10K | | OB | ae 2.5K | - ~ I | w | 1 | Z on Loe je % Z 06 + z 2 0-30 vDC (ADJUST Ip: 10MA) 4 = Qo = z = x Cc ~ 3 = 2 n 4 4 A g gy 0 5 3 7iN014,4,8 TEKTRONIX TEKTRONIX Z oo | INSI6.AB _| TYPE 110 OR IN TYPE N = INalas PULSE SAMPLING PLUG r IN4I54 GENERATOR IN UNIT INaaag RISE TIME TRIGGER RISE TIME TT IN44.48 _ <.5NS S.6NS J IN4 449 oS 1972 1o7! \ 10 100 LOW CURRENT ter TEST CIRCUIT DURATION OF PEAK SQUARE WAVE FORWARD POWER PULSE - SECONDS * * Figure 6 Figure 7 3.0 4 TYPICAL pn! Joe a... lat | 2.0 [oe H ee ow TYPICAL TEMPERATURE | > COEFFICIENT (ALL TYPES) _ Oo el bE ~~ 1.0 Ol A I 10 100 IL IN mA F Figure 8 2071N914, A, B 1N4154 1N4536 1N916, A, B 1N446-49 1N4148, 49 | 1N4531 NORMALIZED EFFECTIVE LIFETIME 24 T q T T T y Ip=50mA TYPICAL VARIATION OF EFFECTIVE 40ma LIFETIME (7) WITH FORWARD y), 30mA CURVE FOR DETERMINING REVERSE 2.2 -/ CURRENT AND AMBIENT TEMPERATURE Y 4 RECOVERY TIME UNDER VARIOUS (ALL TYPES) V/) . DRIVE CONDITIONS 20mA 20 WY, / 18 L ZS loma s FE y / a 7) | a } = a YL cr 7 L2 bo |_-T | Lo a 08 - 06 0.2 0.4 0.6 0.8 1.0 -0 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE - Ta- DEGREES CENTIGRADE vr Figure 9 Figure 10 ESTIMATION OF REVERSE RECOVERY TIME UNDER VARIOUS DRIVE CONDITIONS The reverse recovery time of a silicon signal diode has been shown* to be determined by a quantity called the effective lifetime, r, and the ratio of forward and reverse current. oO TIME > The exact equations expressing times t, and t, (as defined in the sketch at right) are I, somewhat inconvenient for numerical evalu- tion, but in many cases an estimation of response time is sufficient. Figure 10 is a I graphical solution to the response time equa- r | . | tions and its use can best be illustrated by Ie ta tb the following example: FIND: Recovery time to 5 mA reverse current when the forward current is 25 mA and the maximum reverse current is 20 mA. SOLUTION: Enter the left side of Figure 10 at I/Ir = 20/25 = 0.8 and follow horizontally until the ta vs. In/It line is reached (see dotted line). From the t/r scale of the horizontal axis, it is seen that t, is 0.287. The t, portion of the recovery curve is estimated by moving downward parallel to the general contour lines until the I/Ir= 5/25 = 0.2 line is reached. The total switching time is thus 0.467. The delay time, ts, is 0.467 0.287 or 0.187. The value of r on the spec sheet should be corrected for current level. Figure 9 shows the typical variation of effective lifetime with forward current. Since the current level of the example is 25 mA, the maximum effective lifetime is approximately (6.8) (1.35) or 9.3 nsec., therefore: ta ~ (9.3) (.28) = 2.6 nsec. maximum ty = (9.8) (18) ~ 1.7 nsec. maximum Total reverse recovery time ~ 4.3 nsec. maximum Additional information on this raethod of diode recovery time calculation is contained in a paper entitled Predicting Reverse Recovery Time of High Speed Semiconductor Junction Diodes by C. H. Chen, (Publication #90.36) available on request. *Ko, W. H., The Reverse Transient Behavior of Semiconductor Junction Diodes, IRE Trans. ED-8, March 1961, pp. 123-131. 208