PD - 95218 IRF7507PbF HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS P-CHANNEL MOSFET N-Ch P-Ch 20V -20V RDS(on) 0.135 0.27 Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. N-Channel 20 2.4 1.9 19 Units P-Channel -20 -1.7 -1.4 -14 1.25 0.8 10 12 16 5.0 -5.0 -55 to + 150 240 (1.6mm from case) V A W W mW/C V V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. 100 Units C/W 1 5/11/04 IRF7507PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 -- -- -- -- -- -- 0.7 -0.7 2.6 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions -- -- VGS = 0V, ID = 250A V -- -- VGS = 0V, ID = -250A 0.041 -- Reference to 25C, ID = 1mA V/C -0.012 -- Reference to 25C, ID = -1mA 0.085 0.14 VGS = 4.5V, ID = 1.7A 0.120 0.20 VGS = 2.7V, I D = 0.85A 0.17 0.27 VGS = -4.5V, ID =-1.2A 0.28 0.40 VGS = -2.7V, ID =-0.6A -- -- VDS = VGS, ID = 250A V -- -- VDS = VGS, ID = -250A -- -- VDS = 10V, ID = 0.85A S -- -- VDS = -10V, ID = -0.6A -- 1.0 VDS = 16 V, VGS = 0V -- -1.0 VDS = -16V, VGS = 0V A -- 25 VDS = 16 V, VGS = 0V, TJ = 125C -- -25 VDS = -16V, VGS = 0V, TJ = 125C -- 100 VGS = 12V 5.3 8.0 N-Channel 5.4 8.2 ID = 1.7A, VDS = 16V, VGS = 4.5V 0.84 1.3 nC 0.96 1.4 P-Channel 2.2 3.3 ID = -1.2A, V DS = -16V, V GS = -4.5V 2.4 3.6 5.7 -- N-Channel 9.1 -- VDD = 10V, ID = 1.7A, R G = 6.0, 24 -- RD = 5.7 35 -- ns 15 -- P-Channel 38 -- VDD = -10V, ID = -1.2A, RG = 6.0, 16 -- RD = 8.3 43 -- 260 -- N-Channel 240 -- VGS = 0V, VDS = 15V, = 1.0MHz 130 -- pF 130 -- P-Channel 61 -- VGS = 0V, VDS = -15V, = 1.0MHz 64 -- Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) I SM Pulsed Source Current (Body Diode) V SD Diode Forward Voltage t rr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 1.25 -- -- -1.25 A -- -- 19 -- -- -14 -- -- 1.2 TJ = 25C, IS = 1.7A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -1.2A, V GS = 0V -- 39 59 N-Channel ns -- 52 78 TJ = 25C, I F = 1.7A, di/dt = 100A/s -- 37 56 P-Channel nC TJ = 25C, IF = -1.2A, di/dt = -100A/s -- 63 95 Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. N-Channel ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, TJ 150C Surface mounted on FR-4 board, t 10sec. max. junction temperature. ( See fig. 21 ) P-Channel ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com IRF7507PbF N - Channel 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 10 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP 1 0.1 1.5V 20s PULSE WIDTH TJ = 25C A 0.01 0.1 1 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP 10 1 1.5V 0.1 20s PULSE WIDTH TJ = 150C A 0.01 0.1 10 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 ISD , Reverse Drain Current (A) I D , Drain-to-Source Current (A) 100 10 TJ = 150C TJ = 25C 1 V DS = 10V 20s PULSE WIDTH 0.1 1.5 2.0 2.5 3.0 3.5 10 TJ = 150C TJ = 25C 1 0.1 0.4 A 4.0 VGS , Gate-to-Source Voltage (V) 1.0 1.2 1.4 1.6 A 1.8 Fig 4. Typical Source-Drain Diode Forward Voltage RDS(on) , Drain-to-Source On Resistance (Normalized) R DS(on) , Drain-to-Source On Resistance 1.5 1.0 0.5 VGS = 4.5V 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com 0.8 0.8 ID = 1.7A 0.0 -60 -40 -20 VGS = 0V 0.6 V SD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics 2.0 10 VDS , Drain-to-Source Voltage (V) 0.6 0.4 V GS 0.2 = 2.5V VGS = 5.0V 0.0 0 2 4 6 A I D , Drain Current (A) Fig 6. Typical On-Resistance Vs. Drain Current 3 N - Channel 0.13 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 0.11 0.09 ID , Drain Current (A) R DS(on) , Drain-to-Source On Resistance ( IRF7507PbF I D = 2.4A 10 100us 1ms 1 10ms 0.07 0.05 2 3 4 5 6 7 8 A 0.1 TC = 25 C TJ = 150 C Single Pulse 1 V GS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 500 -VGS , Gate-to-Source Voltage (V) C, Capacitance (pF) Ciss 300 Coss 200 Crss 100 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 4 100 Fig 8. Maximum Safe Operating Area 10 V GS = 0V, f = 1MHz C iss = Cgs + Cgd , Cds SHORTED C rss = C gd C oss = Cds + C gd 400 10 VDS , Drain-to-Source Voltage (V) A I D = 1.7A VDS = 16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 9 0 0 2 4 6 8 10 A Q G , Total Gate Charge (nC) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage www.irf.com IRF7507PbF P - Channel 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 -ID , Drain-to-Source Current (A) -ID , Drain-to-Source Current (A) TOP 1 0.1 -1.5V 20s PULSE WIDTH TJ = 25C A 0.01 0.1 1 10 1 -1.5V 0.1 20s PULSE WIDTH TJ = 150C 0.01 0.1 10 Fig 11. Typical Output Characteristics -ISD , Reverse Drain Current (A) -ID , Drain-to-Source Current (A) A 10 TJ = 25C TJ = 150C 1 0.1 VDS = -10V 20s PULSE WIDTH 0.01 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 TJ = 150C 1 TJ = 25C 0.1 VGS = 0V 0.01 A 0.4 -VGS , Gate-to-Source Voltage (V) 0.5 V GS = -4.5V 0.0 0 20 40 60 80 A 100 120 140 160 TJ , Junction Temperature (C) Fig 15. Normalized On-Resistance Vs. Temperature www.irf.com R DS (on), Drain-to-Source On Resistance 1.0 -20 1.0 A 1.2 1.0 1.5 -40 0.8 Fig 14. Typical Source-Drain Diode Forward Voltage I D = -1.2A -60 0.6 -VSD , Source-to-Drain Voltage (V) Fig 13. Typical Transfer Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) 10 Fig 12. Typical Output Characteristics 10 2.0 1 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) 0.8 0.6 VGS = -2.5V 0.4 VGS = -5.0V 0.2 0.0 0.0 0.5 1.0 1.5 2.0 -I D , Drain Current (A) Fig 16. Typical On-Resistance Vs. Drain Current 5 IRF7507PbF P - Channel 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 0.250 -II D , Drain Current (A) R DS (on), Drain-to-Source On Resistance 0.300 ID = -1.7A 0.200 0.150 0.100 2 3 4 5 6 7 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 8 1 10 -VGS , Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage 500 10 -V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) Fig 18. Maximum Safe Operating Area V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 400 Ciss 300 Coss 200 Crss 100 0 1 10 100 -V DS , Drain-to-Source Voltage (V) 100 I D = -1.2A VDS = -16V 8 6 4 2 FOR TEST CIRCUIT SEE FIGURE 19 0 A 0 2 4 6 8 A 10 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 0.01 1 0.1 0.00001 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF7507PbF Micro8 Package Outline Dimensions are shown in milimeters (inches) LEAD ASSIGNMENTS DIM D 3 - B- D D D D 8 7 6 5 3 H E 0.25 (.010) - A- M A M D1 D1 D2 D2 8 7 6 5 8 7 6 5 SINGLE DUAL 1 2 3 4 1 2 3 4 S S S G S1 G1 S2 G2 1 2 3 4 INCHES MILLIMETERS MIN MAX MIN A .036 .044 0.91 MAX 1.11 A1 .004 .008 0.10 0.20 B .010 .014 0.25 0.36 C .005 .007 0.13 0.18 D .116 .120 2.95 3.05 e .0256 BASIC 0.65 BASIC e1 .0128 BASIC E .116 .120 2.95 3.05 H .188 .198 4.78 0.33 BASIC 5.03 e L .016 .026 0.41 0.66 6X 0 6 0 6 e1 RECOMMENDED FOOTPRINT 1.04 ( .041 ) 8X A -CB 0.10 (.004) A1 8X 0.08 (.003) M C A S L 8X B S C 0.38 8X ( .015 ) 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) NOTES: 1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.65 6X ( .0256 ) 2 CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH. Micro8 Part Marking Information EXAMPLE: THIS IS AN IRF 7501 LOT CODE (XX) DATE CODE (YW) - S ee table below Y = YEAR W = WEEK P = DES IGNATES LEAD - FREE PRODUCT (OPTIONAL) PART NUMBER WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR www.irf.com YEAR Y 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 1 2 3 4 5 6 7 8 9 0 WORK WEEK WW = (27-52) IF PRECEDED BY A LETT ER W YEAR Y 01 02 03 04 A B C D 24 25 26 X Y Z 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z 7 IRF7507PbF Micro8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/04 8 www.irf.com