MRF5S21130HR3 MRF5S21130HSR3
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for W-CDMA base station applications at frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be used in Class AB for P CN - PCS / c e ll u la r r adi o and WL L
applications.
•Typical 2-Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1200 mA,
Pout = 28 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 13.5 dB
Efficiency — 26%
IM3 @ 10 MHz Offset — -37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — -39 dBc in 3.84 MHz Channel Bandwidth
•Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 92 Watts CW
Output Power
Features
•Characterized with Series Equivalent Large-Signal Impedance Parameters
•Internally Matched for Ease of Use
•Qualified Up to a Maximum of 32 VDD Operation
•Integrated ESD Protection
•Lower Thermal Resistance Package
•Low Gold Plating Thickness on Leads, 40µ″ Nominal.
•RoHS Compliant
•In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage VDSS -0.5, +65 Vdc
Gate-Source Voltage VGS -0.5, +15 Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD372
2.13
W
W/°C
Storage Temperature Range Tstg - 65 to +150 °C
Case Operating Temperature TC150 °C
Operating Junction Temperature TJ200 °C
CW Operation @ TC = 25°C
Derate above 25°C
CW 100
0.54
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value (1,2) Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 92 W CW
Case Temperature 76°C, 28 W CW
RθJC
0.44
0.47
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MRF5S21130H
Rev. 3, 5/2006
Freescale Semiconductor
Technical Data
MRF5S21130HR3
MRF5S21130HSR3
2110-2170 MHz, 28 W AVG., 28 V
2 x W-CDMA
LATERAL N- CHANNEL
RF POWER MOSFETs
CASE 465C- 02, STYLE 1
NI- 880S
MRF5S21130HSR3
CASE 465B- 03, STYLE 1
NI- 880
MRF5S21130HR3
Freescale Semiconductor, Inc., 2006. All rights reserved.
2
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
Table 3. ESD Protection Characteristics
Test Conditions Class
Human Body Model 2 (Minimum)
Machine Model M4 (Minimum)
Charge Device Model C7 (Minimum)
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS — — 10 µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS — — 1 µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS — — 1 µAdc
On Characteristics
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th) 2.5 2.7 3.5 Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 1200 mAdc)
VGS(Q) — 3.7 — Vdc
Drain- Source On-Voltage
(VGS = 10 Vdc, ID = 3 Adc)
VDS(on) — 0.26 0.3 Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 3 Adc)
gfs — 7.5 — S
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss — 2.6 — pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg., f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2- carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Power Gain Gps 12 13.5 — dB
Drain Efficiency ηD24 26 — %
Intermodulation Distortion IM3 -37 -35 dBc
Adjacent Channel Power Ratio ACPR — -39 -37 dBc
Input Return Loss IRL — -12 -9 dB
1. Part internally matched both on input and output.
MRF5S21130HR3 MRF5S21130HSR3
3
RF Device Data
Freescale Semiconductor
R1
VBIAS
Z7
RF
INPUT
Z9
C15
+
C20C11
+
C13
+VSUPPLY
RF
OUTPUT
DUT
C1 C3R2 C9
C5
C10
C6
Z6
Z10
C8
C7
Z1 Z2 Z3 Z4 Z5
Z11 Z16Z15Z14Z13Z12Z8
C17
C18
C19
C16
+
C12
+
C14
C2
+
C4
+
Figure 1. MRF5S21130HR3(SR3) Test Circuit Schematic
Z9, Z10 0.709″ x 0.083″ Microstrip
Z11 0.415″ x 1.000″ Microstrip
Z12 0.531″ x 0.083″ Microstrip
Z13 0.994″ x 0.083″ Microstrip
Z14, Z15 0.070″ x 0.220″ Microstrip
Z16 0.430″ x 0.083″ Microstrip
PCB Taconic TLX8, 0.030″, εr = 2.55
Z1 0.500″ x 0.083″ Microstrip
Z2 0.995″ x 0.083″ Microstrip
Z3 0.905″ x 0.083″ Microstrip
Z4 0.159″ x 1.024″ Microstrip
Z5 0.117″ x 1.024″ Microstrip
Z6, Z7 0.749″ x 0.083″ Microstrip
Z8 0.117″ x 1.000″ Microstrip
Table 5. MRF5S21130HR3(SR3) Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C13, C14, C15, C16 10 µF, 35 V Tantalum Capacitors 293D1106X9035D Vishay-Sprague
C3, C4, C11, C12 220 nF Chip Capacitors (1812) 1812Y224KXA Vishay-Vitramon
C5, C6, C7, C9, C10, C18, C19 6.8 pF 100B Chip Capacitors 100B6R8CW ATC
C8 0.1 pF 100B Chip Capacitor 100B0R1BW ATC
C17 0.5 pF 100B Chip Capacitor 100B0R5BW ATC
C20 220 µF, 63 V Electrolytic Capacitor, Radial 13668221 Philips
R1, R2 1 kW, 1/4 W Chip Resistors
4
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
Figure 2. MRF5S21130HR3(SR3) Test Circuit Component Layout
MRF5S21130
C1
R1
R2
C7 C8
C3
C5
C4
C6
C9 C11 C13 C15
C10 C12C14 C16
C17 C19
C18
C20
C2
CUT OUT AREA
Rev 0
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
MRF5S21130HR3 MRF5S21130HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
22202060
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W- CDMA Broadband Performance
@ Pout = 28 Watts Avg.
IM3 (dBc), ACPR (dBc)
Gps, POWER GAIN (dB)
−30
−10
−15
−20
−25
INPUT RETURN LOSS (dB)IRL,
VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing,
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
2200218021602140212021002080
6
14
13
12
11
10
9
8
7
−44
35
30
25
20
−28
−32
−36
−40
1000
11
15
1
IDQ = 1600 mA
1400 mA
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two- Tone Power Gain versus
Output Power
Gps, POWER GAIN (dB)
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
800 mA
1200 mA
1000 mA
10 100
14.5
14
13.5
13
12.5
12
11.5
1000
−65
−25
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Third Order Intermodulation Distortion
versus Output Power
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
10010
−30
−35
−40
−45
−50
−55
−60
1000 mA
800 mA
IDQ = 1600 mA
1200 mA
1400 mA
VDD = 28 Vdc
f1 = 2135 MHz,
f2 = 2145 MHz
Two−Tone Measurement,
10 MHz Tone Spacing
100
−60
−25
0.1
TWO−TONE SPACING (MHz)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
INTERMODULATION DISTORTION (dBc)IMD,
110
−30
−35
−40
−45
−50
−55
47
57
33
Ideal
P1dB = 51.88 dBm (154.17 W)
Actual
Pin, INPUT POWER (dBm)
Figure 7. Pulse CW Output Power versus
Input Power
Pout, OUTPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1200 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
f = 2140 MHz
P3dB = 52.58 dBm (181.1 W)
55
53
49
34 38 40 42 45
3rd Order
5th Order
7th Order
ηD, DRAIN
EFFICIENCY (%)
ηD
51
35 36 37 39 41 43 44 46
VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2140 MHz
6
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
TYPICAL CHARACTERISTICS
0
35
5
−55
−20
Gps
ACPR
Pout, OUTPUT POWER (WATTS) AVG. (W−CDMA)
Figure 8. 2-Carrier W- CDMA ACPR, IM3, Power
Gain and Drain Efficiency versus Output Power
IM3 (dBc), ACPR (dBc)
10 15 20 25 30 35 40 45
30 −25
25 −30
20 −35
15 −40
10 −45
5 −50
IM3
ηD
ηD,
, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
220
10
9
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. MTTF Factor versus Junction Temperature
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
108
107
106
120 140 160 180 200
MTTF FACTOR (HOURS x AMPS )
2
VDD = 28 Vdc, IDQ = 1200 mA, f1 = 2135 MHz
f2 = 2145 MHz, 2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
W- CDMA TEST SIGNAL
10
0.0001
100
0
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
PROBABILITY (%)
10
1
0.1
0.01
0.001
2468 20515100−5−10−15−20−25 25
Figure 11. 2-Carrier W-CDMA Spectrum
f, FREQUENCY (MHz)
−110
−120
−70
−20
−80
−60
−50
(dB)
−90
−100
−40
−30
3.84 MHz
Channel BW
−IM3 in
3.84 MHz BW
+IM3 in
3.84 MHz BW
−ACPR in
3.84 MHz BW
+ACPR in
3.84 MHz BW
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
MRF5S21130HR3 MRF5S21130HSR3
7
RF Device Data
Freescale Semiconductor
Figure 12. Series Equivalent Source and Load Impedance
f
MHz
Zsource
Ω
Zload
Ω
2080
2110
2140
1.51 - j2.97
1.59 - j2.68
1.52 - j2.54
2.87 - j9.49
3.13 - j9.86
4.05 - j10.90
VDD = 28 Vdc, IDQ = 1200 mA, Pout = 28 W Avg.
Zo = 25 Ω
Zload
f = 2080 MHz
f = 2200 MHz
Zsource
f = 2080 MHz
f = 2200 MHz
2170
2200 1.54 - j3.13
1.62 - j2.704.80 - j11.75
5.55 - j11.87
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured
from drain to ground.
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
MRF5S21130HR3 MRF5S21130HSR3
11
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
CASE 465B- 03
ISSUE D
NI- 880
MRF5S21130HR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4. DELETED
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.335 1.345 33.91 34.16
B0.535 0.545 13.6 13.8
C0.147 0.200 3.73 5.08
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
G1.100 BSC 27.94 BSC
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.871 0.889 19.30 22.60
Q.118 .138 3.00 3.51
R0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
3
2
D
G
K
C
E
H
F
Q
2X
M
A
M
bbb B M
T
M
A
M
bbb B M
T
B
B
(FLANGE)
SEATING
PLANE
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
S
M
A
M
aaa B M
T
(INSULATOR)
R
M
A
M
ccc B M
T
(LID)
S0.515 0.525 13.10 13.30
M0.872 0.888 22.15 22.55
aaa 0.007 REF 0.178 REF
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
CASE 465C- 02
ISSUE D
NI- 880S
MRF5S21130HSR3
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.905 0.915 22.99 23.24
B0.535 0.545 13.60 13.80
C0.147 0.200 3.73 5.08
D0.495 0.505 12.57 12.83
E0.035 0.045 0.89 1.14
F0.003 0.006 0.08 0.15
H0.057 0.067 1.45 1.70
K0.170 0.210 4.32 5.33
N0.871 0.889 19.30 22.60
R0.515 0.525 13.10 13.30
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
1
SEATING
PLANE
2
D
K
C
E
H
F
M
A
M
bbb B M
T
B
B
(FLANGE)
M
A
M
ccc B M
T
M
A
M
bbb B M
T
AA
(FLANGE)
T
N(LID)
M(INSULATOR)
M
A
M
ccc B M
T
M
A
M
aaa B M
T
R(LID)
S(INSULATOR)
S0.515 0.525 13.10 13.30
M0.872 0.888 22.15 22.55
bbb 0.010 REF 0.254 REF
ccc 0.015 REF 0.381 REF
aaa 0.007 REF 0.178 REF
12
RF Device Data
Freescale Semiconductor
MRF5S21130HR3 MRF5S21130HSR3
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MRF5S21130H
Rev. 3, 5/2006
