DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 BAS316 High-speed diode Product specification Supersedes data of 1998 Jan 08 1998 Mar 26 Philips Semiconductors Product specification High-speed diode BAS316 FEATURES DESCRIPTION * Very small plastic SMD package The BAS316 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD323 SMD plastic package. * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V handbook, halfpage k a * Repetitive peak forward current: max. 500 mA. APPLICATIONS * High-speed switching in e.g. surface mounted circuits. MAM157 Marking code: A6. Cathode side indicated by a bar. Fig.1 Simplified outline (SOD323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VRRM repetitive peak reverse voltage - 85 V VR continuous reverse voltage - 75 V IF continuous forward current - 250 mA IFRM repetitive peak forward current - 500 mA IFSM non-repetitive peak forward current t = 1 s - 4 A t = 1 ms - 1 A t=1s - 0.5 A - 400 mW Ts = 90 C; note 1; see Fig.2 square wave; Tj = 25 C prior to surge; see Fig.4 Ts = 90 C; note 1 Ptot total power dissipation Tstg storage temperature -65 +150 C Tj junction temperature - 150 C Note 1. Ts is the temperature at the soldering point of the cathode tab. 1998 Mar 26 2 Philips Semiconductors Product specification High-speed diode BAS316 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage CONDITIONS MAX. UNIT see Fig.3 reverse current IF = 1 mA 715 mV IF = 10 mA 855 mV IF = 50 mA 1 V IF = 150 mA 1.25 V 30 nA VR = 75 V 1 A VR = 25 V; Tj = 150 C 30 A VR = 75 V; Tj = 150 C; 50 A see Fig.5 VR = 25 V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 1.5 pF trr reverse recovery time when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 4 ns Vfr forward recovery voltage when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Note 1. Soldering point of the cathode tab. 1998 Mar 26 3 note 1 VALUE UNIT 150 K/W Philips Semiconductors Product specification High-speed diode BAS316 GRAPHICAL DATA MGM762 500 IF (mA) MBG382 300 handbook, halfpage handbook, halfpage IF (mA) 400 (1) (2) (3) 200 300 200 100 100 0 0 0 50 100 150 200 0 1 Ts (oC) VF (V) 2 (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of soldering point temperature. Fig.3 Forward current as a function of forward voltage. MBG704 102 handbook, full pagewidth IFSM (A) 10 1 10-1 1 102 10 103 tp (s) Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1998 Mar 26 4 104 Philips Semiconductors Product specification High-speed diode BAS316 MGA884 105 Cd (pF) IR (nA) 10 V R = 75 V 4 max 103 10 MBG446 0.8 handbook, halfpage 0.6 75 V 0.4 25 V 2 0.2 typ typ 10 0 0 100 T j ( o C) 0 200 4 8 12 VR (V) 16 f = 1 MHz; Tj = 25 C. Fig.5 1998 Mar 26 Reverse current as a function of junction temperature. Fig.6 5 Diode capacitance as a function of reverse voltage; typical values. Philips Semiconductors Product specification High-speed diode BAS316 handbook, full pagewidth tr tp t D.U.T. 10% IF RS = 50 IF SAMPLING OSCILLOSCOPE t rr t R i = 50 V = VR I F x R S MGA881 (1) 90% VR input signal output signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05; Oscilloscope: rise time tr = 0.35 ns. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 V I 90% R = 50 S D.U.T. OSCILLOSCOPE V fr R i = 50 10% MGA882 t tr input signal Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty factor 0.005. Fig.8 Forward recovery voltage test circuit and waveforms. 1998 Mar 26 6 t tp output signal Philips Semiconductors Product specification High-speed diode BAS316 PACKAGE OUTLINE SOD323 Plastic surface mounted package; 2 leads A A1 , Q c Lp v M A HE A D 1 E bp 2 (1) 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp mm 1.1 0.8 + 0.05 - 0.05 0.40 0.25 c D E HE Lp Q v 0.25 0.10 1.8 1.6 1.35 1.15 2.7 2.3 0.45 0.15 0.25 0.15 0.2 Note 1. The marking bar indicates the cathode. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ SOD323 1998 Mar 26 EUROPEAN PROJECTION ISSUE DATE 98-09-14 7 Philips Semiconductors Product specification High-speed diode BAS316 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Mar 26 8 Philips Semiconductors Product specification High-speed diode BAS316 NOTES 1998 Mar 26 9 Philips Semiconductors Product specification High-speed diode BAS316 NOTES 1998 Mar 26 10 Philips Semiconductors Product specification High-speed diode BAS316 NOTES 1998 Mar 26 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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