CHIP
RESISTORS
www.vishay.com For technical questions, contact: efi@vishay.com Document Number: 61030
82 Revision: 13-Mar-08
CTQ
Vishay Electro-Films
Thin Film Center-Tapped Resistors
The CTQ series resistor chips offer a wide resistance range with
lower shunt capacitance than can be offered with the silicon
based resistors but only at a lower power level.
The CTQ offers the designer flexibility in use as either a
single value resistor or as two resistor with a center tap
feature. The CTQs six bonding pads allows the user
increased layout flexibility.
The CTQs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The CTQs are 100 % electrically tested and
visually inspected to MIL-STD-883.
FEATURES
•Wire bondable
•Center tap feature
•Chip size: 0.030 inches square
•Resistance range total: 10 Ω to 1 MΩ
•Resistor material: Tantalum nitride, self-passivating
•Moisture resistant
•Quartz substrate
•Low shunt capacitance < 0.1 pF
APPLICATIONS
The CTQ center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, low shunt
capacitance and tracking between two resistors is critical.
For low values, the resistance of the six bonding pad configuration can vary, depending on the method of measurement used.
Vishay EFI measures low-value resistors by the four-wire kelvin technique.
*5 ppm/°C for R < 100. 20 ppm/°C for R < 20
Product may
not be to scale
V
I
R
A
R
B
VIV
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
PROCESS CODE
CLASS H* CLASS K*
102 132
100 130
101 131
*MIL-PRF-38534 inspection criteria
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
TCR Tracking Between Halves (RA, RB)± 2 ppm/°C*
Center Tap Ratio, RA/RB: Tolerance 1 ± 1 % standard
Noise, MIL-STD-202, Method 308, 100 Ω - 250 kΩ
< 100 Ω or > 251 kΩ
- 35 dB typ.
- 20 db typ.
Moisture Resistance, MIL-STD-202, Method 106 ± 0.5 % max. ΔR/R
Stability, 1000 h, + 125 °C, 30 mW ± 0.25 % max. ΔR/R
Operating Temperature Range - 55 °C to + 125 °C
Thermal Shock, MIL-STD-202, Method 107, Test Condition F ± 0.1 % max. ΔR/R
High Temperature Exposure, + 150 °C, 100 h ± 0.2 % max. ΔR/R
Dielectric Voltage Breakdown 400 V
Insulation Resistance 1012 min.
Operating Voltage 200 V
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C) 60 mW
5 x Rated Power Short-Time Overload, + 25 °C, 5 s ± 0.25 % max. ΔR/R %
10 Ω
0.1 %
Tightest Standard Tolerance Available
± 100 ppm/°C
± 50 ppm/°C
0.5 %
25 Ω100 Ω360 kΩ620 kΩ1 MΩ
± 25 ppm/°C