(R) SE M ICOND UC TOR 500 mW DO-35 Hermetically Sealed Glass Fast Switching Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol PD T STG TA = 25C unless otherwise noted Parameter Power Dissipation Storage Temperature Range TJ Operating Junction Temperature WIV Working Inverse Voltage Value Units 500 mW -65 to +150 C +150 C 75 V IO Average Rectified Current 150 mA IFM Non-repetitive Peak Forward Current Peak Forward Surge Current (Pulse Width = 1.0 second) 450 mA 2 A IFSURGE DEVICE MARKING DIAGRAM L xx xx L TC1Nxxxx : Logo : Device Code These ratings are limiting values above which the serviceability of the diode may be impaired. Specification Features: Fast Switching Device (TRR <4.0 nS) DO-35 Package (JEDEC) Through-Hole Device Type Mounting Anode Cathode Hermetically Sealed Glass Compression Bonded Construction All External Surfaces Are Corrosion Resistant And Leads Are Readily Solderable ELECTRICAL SYMBOL RoHS Compliant Solder Hot Dip Tin (Sn) Terminal Finish Cathode Indicated By Polarity Band Electrical Characteristics TA = 25C unless otherwise noted Parameter Symbol Limits Test Condition Min BV IR VF Breakdown Voltage Reverse Leakage Current Forward Voltage TC1N4448, TC1N914B TC1N4148 TC1N4448, TC1N914B TRR Reverse Recovery Time IR=100A 100 IR=5A 75 Unit Max Volts VR=20V 25 nA VR=75V 5 A IF=5mA 0.62 0.72 IF=10mA 1.0 IF=100mA 1.0 Volts IF=10mA, VR=6V RL=100 4 nS 4 pF IRR=1mA C Capacitance VR=0V, f=1M HZ Number: DB-036 Jan 2010 / G Page 1 TC1N4148/TC1N4448/TC1N914B TAK CHEONG TAK CHEONG (R) SE M ICOND UC TOR Typical Characteristics 500 400 f = 1MHz Ta = 25 Total Capacitance [pF] PD-Power Passipation [mW] 1.5 300 200 100 1.0 0.5 0.0 0 0 25 50 75 100 125 Tem perature [ ] 150 0 175 5 10 15 20 25 30 VR - Reverse Voltage [V] Figure 1. Power Dissipation vs Ambient Temperature Figure 2. Total Capacitance Valid provided leads at a distance of 0.8mm from case are kept at ambient temperature 60 Ta=25 IR - Leakage Current [nA] BV - Reverse Voltage [V] 160 150 140 130 120 110 40 30 20 10 0 1 10 100 10 IR - Reverse Current [uA] Figure 3. Reverse Voltage vs Reverse Current BV - 1.0uA to 100uA 1500 1400 Ta=25 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0.001 VR - Reverse Voltage [V] 100 Figure 4. Reverse Current vs Reverse Voltage IR - 10V to 100V 1000 VF - Forward Voltage (mV) VF - Forward Voltage [mV] Ta=25 50 0.100 10.000 IF - Forw ard Current [mA] 1000.000 Figure 5. Forward Voltage vs Forward Current VF - 0.001mA to 800mA 800 600 Ta= -40 Ta=25 400 Ta=65 Ta=125 200 0 0.01 0.1 1 10 IF - Forw ard Current (m A) 100 Figure 6. Forward Voltage vs Ambient Temperature VF - 0.01mA to 100mA (-40 to +125 Deg C) Number: DB-036 Jan 2010 / G Page 2 TAK CHEONG (R) SE M ICOND UC TOR Package Outline Package Case Outline DO-35 DO-35 DIM Millimeters Inches Min Max Min Max A 0.46 0.55 0.018 0.022 B 3.05 4.00 0.120 0.157 C 25.40 38.10 1.000 1.500 D 1.53 2.00 0.060 0.079 Notes: 1. 2. All dimensions are within JEDEC standard. DO35 polarity denoted by cathode band. Number: DB-036 Jan 2010 / G Page 3 TAK CHEONG (R) DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong's sales office for further assistance. Number: DB-100 April 14, 2008 / A