MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives (This device is not recommended for new designs) (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase output inverter, brake transistor/diade, current sense resistor and temperature sensor in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free-wheeling diodes to give optimal dynamic performance. It has been configured for use as a three-phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the users control board. * DC Bus Current Sense Resistor Included Short Circuit Rated 10 us @ 25C, 300V Temperature Sensor Included Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms) Convenient Package Outline uA Recognized * Access to Positive and Negative DC Bus Visit our website at http:/Avww.mot-sps.com/tsgq/ MAXIMUM DEVICE RATINGS (Ty = 25C unless otherwise noted) Order this document! by MHPM7A30A60B/D MHPM7A30A60B 30 AMP, 600 VOLT HYBRID POWER MODULE PLASTIC PACKAGE CASE 440A-02, Style 1 Rating Symbol Value | Unit | INPUT RECTIFIER BRIDGE Peak Repetitive Reverse Voltage (Ty = 125C) VRRM 600 Average Output Rectified Current lo 30 Peak Non-repetitive Surge Current (1/2 cycle)(1) FSM 360 OUTPUT INVERTER IGBT Reverse Voltage VCES 600 Vv Gate-Emitter Voltage VGES +20 v Continuous IGBT Collector Current ICmax 30 A Peak Repetitive IGBT Collector Current (PW = 1.0 ms)(2) 1C(pk) 60 A Continuous Free-Wheeling Diode Current \Fmax 30 A Peak Repetitive Free-Wheeling Diode Current (PW = 1.0 ms)(2) IF(pk) 60 A IGBT Power Dissipation per die (Tc = 95C) Pp 85 W Free-Wheeling Diode Power Dissipation per die (Tc = 95C) Pp 40 Ww Junction Temperature Range Ty 40 to +125 C Short Circuit Duration (VoE = 300V, Ty = 25C) tse 10 ps (1) 4 cycle = 50 or 60 Hz (2) 1 ms = 1.0% duty cycle REV 2 Motorola, Inc. 1998 Book= 00098583. 24uF MM 6367255 0100254 954 ml (S) MOTOROLAMHPM7A30AG60B MAXIMUM DEVICE RATINGS (continued) (Ty = 25C unless otherwise noted) Rating Symbol Value | Unit BRAKE CIRCUIT IGBT Reverse Voltage VcES 600 Vv Gate-Emitter Voltage VGES +20 Vv Continuous IGBT Collector Current ISmax 30 A Peak Repetitive IGBT Collector Current(2) Ic(pk) 60 A IGBT Power Dissipation (Tq = 95C) PD 85 Ww Peak Repetitive Output Diode Reverse Voltage (Tc = 95C) VRRM 600 Vv Continuous Output Diode Current lFmax 30 A Peak Output Diode Current (PW = 1.0 ms) (2) IF(pk) 60 A TOTAL MODULE Isolation Voltage (47-63 Hz, 1.0 Minute Duration) Viso 2500 Vac Operating Case Temperature Range To - 40 to + 90 C Storage Temperature Range Tstg 40 to +125 C Mounting Torque - 6.0 Ib-in ELECTRICAL CHARACTERISTICS (Ty = 25C unless otherwise noted) Characteristic Symbol | Min Typ Max Unit | INPUT RECTIFIER BRIDGE Reverse Leakage Current (VRRiy = 600 V) IR - 5.0 50 pA Forward Voltage (IF = 30 A) VF - 1.16 1.5 v Thermal Resistance (Each Die) RaJc - ~ 2.7 C/W OUTPUT INVERTER Gate-Emitter Leakage Current (VcE = 0 V, VGe =+ 20 V) IGES - - +20 pA Collector-Emlitter Loakage Current (VcE = 600 V, VGE = 0 V) IcES pA . Ty = 25C - 6.0 100 Ty = 125C - 2000 ~ Gate-Emitter Threshold Voltage (VcE = V@_E. Ic = 1.0 mA) VGE(th) 40 6.0 8.0 Collector-Emitter Breakdown Voltage (Ic = 10 mA, VGE = 0) ViBR)CES 600 - - Vv Collector-Emitter Saturation Voltage (Ic = 30 A, VGE = 15 V) VcE(SAT) - 2.3 3.5 Input Capacitance (VGE = 0 V, Vcg = 10 V, f = 1.0 MHz) Cies - 6600 - pF Input Gate Charge (VcgE = 300 V, Io = 30 A, Vag = 15 V) QT ~ 220 - nc Fall Time Inductive Load t - 300 500 ns (VCE = 300 V, Ic = 30 A, VGE = 15 V, Re(offy = 20 2) Tum-On Energy Eon ~ - 3.0 mJ (VCE = 300 V, Ic = 30 A, Vge = 15 V, Raion) = 39 Q) Turn-Off Energy Eo - - 3.0 mJ (VCE = 300 V, Ic = 30 A, VaE = 15 V, Ragoth = 20 2) Free Wheeling Diode Forward Voitage (IF = 30 A, Vqe = 0 V) VE - 1.3 2.2 v Free Wheeling Diode Reverse Recovery Time ter - 150 200 ns (Ip = 30 A, V = 300 V, di/dt = 150 Avs) Free Wheeling Diode Stored Charge Orr - 1580 2300 nc (iF = 30 A, V = 300 V, di/dt = 150 A/is) Thermal Resistance IGBT (Each Die) Rauc - - 1.2 C/W Thermal Resistance Free-Wheeling Diode (Each Die) Rese - - 2.7 "CW (2) 1.0ms = 1.0% duty cycle 2 Book= 00098583: syF Mf 6367255 0100255 850 Motorola IGBT Device DataELECTRICAL CHARACTERISTICS (continued) (Ty = 25C unless otherwise noted) MHPM7A30A60B Characteristic | Symbol Min Typ Max | Unit BRAKE CIRCUIT Gate-Emitter Leakage Current (VcE = 0 V, VGE = + 20 V) IGES - - +20 pA Collector-Emitter Leakage Currant (VCE = 600 V, Vag = 0 V) IcES pA Ty = 25C - 6.0 100 Ty = 125C - 2000 - Gate-Emitter Threshold Voltage (VCE = VGe_, Ic = 1.0 mA) VGE(th) 4.0 6.0 8.0 Vv Collector-Emitter Breakdown Voltage (Ig = 10 mA, VaeE = 0) V(BR)CES 600 - - Vv Collector-Emitter Saturation Voltage (VGE = 15 V, Ic = 30 A) VCE(SAT) - 2.3 3.5 Vv Input Capacitance (VGg = 0 V, VcE = 10 V, f = 1.0 MHz) Cies - 6600 - pF Input Gate Charge (VCE = 300 V, Io = 30 A, Vag = 15 V) QT - 220 - nC Fail Time Inductive Load tf - 300 500 ns (VCE = 300 V, Io = 30A, VaeE = 15 V, RG (off) = 20 Q) Turm-On Energy Eon - - 3.0 mJ (VCE = 300 V, Ic = 30 A, Vge = 15 V, RG(on) = 39 Q) Turn-Off Energy Eoff - - 3.0 mJ (VCE = 300 V, Ic = 30 A, Vag = 15 V, RG(off) = 20 Q) Output Diode Forward Voltage (IF = 30 A) VE - 1.3 2.0 Vv Output Diode Reverse Leakage Current IR - - 50 pA Thermal Resistance |GBT Reauc - - 1.2 CIW Thermal Resistance Diode Rgsc ~ - 2.7 "CW SENSE RESISTOR Resistance Rsense - 5.0 - moQ Resistance Tolerance Rtol -1.0 - +1.0 % TEMPERATURE SENSE DIODE Forward Voltage (@ IF = 1.0 mA) VE - 0.660 - Vv Forward Voltage Temperature Coefficient (@ If = 1.0 mA) TCyF - 1.95 - mVPC Motorola IGBT Device Data 3 Book= 00098583 ayF mm b3b7255 0100256 7e?MHPM7A30AGO0B Ic, COLLECTOR CURRENT (AMPS) Ir, FORWARD CURRENT (AMPS) Vce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Typical Characteristics / 30 Ty= 125 off 10 LM 0.2 0.4 0.6 0.8 1 1.2 14 1.6 Vp, FORWARD VOLTAGE (VOLTS) Figure 1. Forward Characteristics Input Rectifler 128 vor 10h 'y/ov / 12V / Yi5V / / / 1 2 3 4 5 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. Forward Characteristics, Ty = 25C 6 10 4 #414 &2+'16 #418 2 Ve, GATE-EMITTER VOLTAGE (VOLTS) Figure 5. CollectorEmitter Voltage versus Gate-Emitter Voltage Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) ; /Y @ 50 = B 40 y : Af S o 30 2 / < / = 20 2 Ty = 125C / uc ~ 10 VY 2500 0 i 0 02 O04 O06 O08 14 12 14 += 16 Vg, FORWARD VOLTAGE (VOLTS) Figure 2. Forward Characterlstics FreeWheelling Diode 60 T l T t T Ty = 125C Woe =10V// fev fav xO / 15V 40 30 Z 20 VY, 0 1 2 3 4 5 Voce, COLLECTOR-EMITTER VOLTAGE (VOLTS) Ic, COLLECTOR CURRENT (AMPS) 10 Figure 4. Forward Characteristics, Ty = 125C se 8 8 & 8 g 100 I=30A Ty=25C Vge. GATE-EMITTER VOLTAGE (VOLTS) 8 Oo 0 20 40 60 80 100 120 140 160 180 200 220 240 Qg, TOTAL GATE CHARGE (nC) Figure 6. CollectorEmltter and GateEmitter Voltages versus Total Gate Charge 4 Book= 00098583 sur mg 4367255 0100257 bbl Motorola IGBT Device Data1000 3 t, TIME (ns) 10000 t, TIME (ns) 100 1000 1000 1 t, TIME (ns) 00 10 VcE = 300 V Vge = 15V RG(off) = 20 2 Ty = 25C 10 20 30 40 50 Ic, COLLECTOR CURRENT (AMPS) Figure 7. Inductive Switching Times MHPM7A30A60B Typical Characteristics 60 versus Collector Current, Ty = 25C 100 Rg (of, GATE RESISTANCE (OHMS) Figure 9. Inductive Switching Times versus Gate Resistance, Ty = 25C 0 10 20 30 Ty = 125C 40 50 25C Ic, COLLECTOR CURRENT (AMPS) 60 Figure 11. Inductive Switching Times versus Collector Current 70 70 1000 t, TIME (ns) VcE = 300 V Voe=15V RG (off) = 20 2 Ty= 125C 100 0 10 20 30 40 50 60 70 Ic, COLLECTOR CURRENT (AMPS) Figure 8. Inductive Switching Times versus Collector Current, Ty = 125C 100000 10000 t, TIME (ns) 1000 10 100 1000 RG(otf), GATE RESISTANCE (OHMS) Figure 10. Inductive Switching Times versus Gate Resistance, Ty = 125C 10000 25C tr 1000 Ty = 125C t, TIME (ns) 100 10 100 1000 RGjon}. GATE RESISTANCE (OHMS) Figure 12. Inductive Switching Times versus Gate Resistance Motorola IGBT Device Data Book= 00098583 Sur gg 6367255 0100258 STT MlMHPM7A30A60B Typical Characteristics 10000 Vge = 15V Ic =30A 1000 Egy. TURN-OFF ENERGY LOSSES (j1J) Egy, TURN-OFF ENERGY LOSSES (J) 100 0 10 20 30 40 50 60 70 10 100 1000 Ic, COLLECTOR CURRENT (AMPS) RG (off. GATE RESISTANCE (OHMS) Figure 13. TurnOff Energy Losses Figure 14. TurnOff Energy Losses versus Collector Current versus Gate Resistance g Ty = 125C y = 3 So 25C 8 1000 Ty = 125C Coes ~ eo 25C zy C, CAPACITANCE (pF) 100 Cres Irs PEAK REVERSE RECOVERY CURRENT (A) trr, REVERSE RECOVERY TIME (ns) ~di/dt = 150 Aus 0 0 10 2 30 40 50 866070 0 10 2 30 40 50 60 70 80 90 100 I, FORWARD CURRENT (AMPS) VcE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Reverse Recovery Characteristics Figure 16. Capacitance Variation FreeWheeling Diode S = (NORMALIZED) So = | VGe= 15 V -Vep =0V | ee RG(on) =39Q Ty = 25C 1 ic, COLLECTOR CURRENT (AMPS) 1 0 200 400 600 800 1.0 10 100 1000 Vcg, COLLECTOR-EMITTER VOLTAGE (VOLTS) t, TIME (ms) 0.001 & rt), EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 17. Reversed Blased Safe Figure 18. Thermal Response Operating Area (RBSOA) 6 Motorola IGBT Device Data Book= 00098583. C4UF MMB 6367255 0100259 43b+ VCE MHPM7A30A60B r= ton M* toff {don} | iw tr tof) tf 90% 90% OUTPUT, Vout INVERTED 90% INPUT, Vin 50% 10% PULSE WIDTH Figure 19. Inductive Switching Time Test Circult and Timing Chart Motorola IGBT Device Data Book= 00098583- suf mm 6367255 O01002b0 155asueg BINyBJedwe) Pue s6pua WOUND YA apoiq seynooy obpud NE bands | | I | @porg/1 891 ! aye | [ MHPM7A30A60B archi eseud- 3. [z] NOLLVOIILNAG! HEWN Nid = [| aseld- NOMWYDSLNI OIAaG , 09,[ | c a0 om ASNAS dL ? 9 3 9 Wr fr Ate Yotys 20 " o1 [z| [e ]o+ [] os [z] q 6 | Ao oe? 1 8 [rz] [@] no [a] [Lo] [2 | ay zaa aay a ie {ira a _ Motorola IGBT Device Data Figure 20. Integrated Power Stage Schematic Book= 00098583 SyF mg 6367255 0100261 054 aMHPM7A30AG0B PACKAGE DIMENSIONS 7 Po rian rr ee THEE i woe i AH Vv Ws 2 PL 29, [ 1 7 f_ | L J 1 | ! ti DETAIL Z \ t#- AG 2 x The _ P > NOTES: < U > 1, DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. LEAD LOCATION DIMENSIONS (ie: M, G, AA...) es J ARE TO THE CENTER OF THE LEAD. H 25 PL 7PL col | I Tt Td de He rf DETAIL Z CASE 440A-02 ISSUE A Motorola IGBT Device Data Book= 00098583. suf gg 43967255 O0100ebe Teo =