UNISONIC TECHNOLOGIES CO., LTD
2N5551 NPN SILICON TRANSISTOR
www.unisonic.com.tw 1 of 4
Copyright © 2009 Unisonic Technologies Co., Ltd QW-R201-002.C
HIGH VOLTAGE SWITCHING
TRANSISTOR
FEATURES
* High collector-emitter voltage:
V
CEO=160V
* High current gain
APPLICATIONS
* Telephone switching circuit
* Amplifier
TO-92
1
1
SOT-89
ORDERING INFORMATION
Ordering Number Pin Assignment
Normal Lead Free Plating Halogen Free Package 1 2 3
Packing
2N5551-x-AB3-R 2N5551L-x-AB3-R 2N5551G-x-AB3-R SOT-89 B C E Tape Reel
2N5551-x-T92-B 2N5551L-x-T92-B 2N5551G-x-T92-B TO-92 E B C Tape Box
2N5551-x-T92-K 2N5551L-x-T92-K 2N5551G-x-T92-K TO-92 E B C Bulk
2N5551 NPN SILICON TRANSISTOR
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ABSOLUTE MAXIMUM RATINGS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 160 V
Emitter-Base Voltage VEBO 6 V
Collector Dissipation TO-92 625 mW
Collector Dissipation SOT-89 PC 500 mW
Collector Current IC 600 mA
Junction Temperature TJ +150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO I
C=100μA, IE=0 180 V
Collector-Emitter Breakdown Voltage BVCEO I
C=1mA, IB=0 160 V
Emitter-Base Breakdown Voltage BVEBO I
E=10μA, IC=0 6 V
Collector Cut-off Current ICBO V
CB=120V, IE=0 50 nA
Emitter Cut-off Current IEBO V
BE=4V,IC=0 50 nA
DC Current Gain(Note)
hFE1
hFE2
hFE3
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
80
80
80
160
400
Collector-Emitter Saturation Voltage VCE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
0.15
0.2 V
Base-Emitter Saturation Voltage VBE(SAT)
IC=10mA, IB=1mA
IC=50mA, IB=5mA
1
1 V
Current Gain Bandwidth Product fT V
CE=10V, IC=10mA, f=100MHz 100 300 MHz
Output Capacitance Cob V
CB=10V, IE=0 f=1MHz 6.0 pF
Noise Figure NF IC=0.25mA, VCE=5V
RS=1kΩ, f=10Hz ~ 15.7kHz
8 dB
Note: Pulse test: PW<300μs, Duty cycle<2%
CLASSIFICATION OF hFE
RANK A B C
RANGE 80-170 150-240 200-400
2N5551 NPN SILICON TRANSISTOR
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TYPICAL CHARACTERISTICS
DC Current Gain
Collector Current, IC(mA)
VCE=5V
Collector Output Capacitance
Collector-Base Voltage (V)
0
2
4
6
8
10
f=1MHz
IE=0
10010110210-1 100101102103
100
101
102
103
Collector Current, IC (mA)
Saturation Voltage (V)
Current Gain-Bandwidth Product
Collector Current, IC(mA)
VCE=10V
100101102103
100
101
102
103
2N5551 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 4 of 4
www.unisonic.com.tw QW-R201-002.C
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
