All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
PTFB090901EA
Package H-36265-2
PTFB090901FA
Package H-37265-2
Thermally-Enhanced High Power RF LDMOS FETs
90 W, 28 V, 920 – 960 MHz
Description
The PTFB090901EA and PTFB090901FA are 90-watt LDMOS
FETs intended for use in multi-standard cellular power amplifi er
applications in the 920 to 960 MHz frequency band. Features in-
clude input and output matching, high gain and thermally-enhanced
packages. Manufactured with Infi neon's advanced LDMOS pro-
cess, these devices provide excellent thermal performance and
superior reliability.
Features
• Input and output internal matching
• Typical CW performance, 960 MHz, 28 V
- Output power at P1dB = 90 W
- Effi ciency = 65%
• Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 20 W
- Linear Gain = 20.8 dB
- Effi ciency = 35%
- Intermodulation distortion = –35 dBc
• Integrated ESD protection
• Low thermal resistance
• Pb-free and RoHS-compliant
• Capable of handling 10:1 VSWR @ 28 V, 90 W (CW)
output power
RF Characteristics
Single-carrier WCDMA Specifi cations (tested in Infi neon test fi xture)
VDD = 28 V, IDQ = 650 mA, POUT = 25 W average, ƒ = 960 MHz
3GPP signal, PAR = 10 dB @ 0.01% CCDF probability, channel bandwidth = 3.84 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 19 19.5 — dB
Drain Efficiency ηD 36 40 — %
Adjacent Channel Power Ratio ACPR — –35 –31.5 dBc
30
40
50
60
20
21
22
23
f
iciency (%)
G
ain (dB)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MH z carrier spacing, BW = 3.84 MHz
Gain
0
10
20
17
18
19
31 33 35 37 39 41 43 45 47 49
Ef
f
G
Output Power, Avg. (dBm)
Efficienc
y
b090901 gr 1
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Data Sheet 2 of 14 Rev. 04, 2012-02-23
Target RF Characteristics (cont.)
Two-tone Specifi cations (not subject to production test—verifi ed by design/characterization in Infi neon test fi xture)
VDD = 28 V, IDQ = 650 mA, POUT = 70 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps — 19.5 — dB
Drain Efficiency ηD — 48 — %
Intermodulation Distortion IMD — –30 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
V
DS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-state Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.123 — Ω
Operating Gate Voltage VDS = 28 V, IDQ = 650 mA VGS — 3.8 — V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-source Voltage VDSS 65 V
Gate-source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 85 W CW) RθJC 0.73 °C/W
Ordering Information
Type and Version Order Code Package Package Description Shipping
PTFB090901EA V1 PTFB090901EAV1XWSA1 H-36265-2 Ceramic open-cavity, bolt-down Tray
PTFB090901EA V1 R250 PTFB090901EAV1R250XTMA1 H-36265-2 Ceramic open-cavity, bolt-down Tape & Reel, 250 pcs
PTFB090901FA V1 PTFB090901FAV1XWSA1 H-37265-2 Ceramic open-cavity, earless Tray
PTFB090901FA V1 R250 PTFB090901FAV1R250XTMA1 H-37265-6/2 Ceramic open-cavity, earless Tape & Reel, 250 pcs
Data Sheet 3 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
-35
-30
-25
-20
Imd (dBc)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA,
3GPP WCDMA sign al, PAR = 8 dB,
10 M Hz carrier spacing, 3.84 M Hz BW
960 MH z
940 MH z
920 MHz
IM3 Low
IM3 Up
-45
-40
31 33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
920 MHz
b090901 gr 2
20
30
40
50
60
35
-30
-25
-20
-15
f
iciency (% )
B
c), ACPR (dBc)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MH z carrier spacing, BW = 3.84 MHz
IMD Lo
w
IMD Up
Efficiency
0
10
20
-45
-40
-
35
31 34 37 40 43 46 49
Ef
f
IMD (d
B
Output Powe r, Avg. (dBm)
b090901 gr 3
ACPR
30
40
50
60
-30
-20
-10
0
Efficiency (%)
Single-carrier WCDM A Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MHz,
3GPP WCDMA signal, TM1 w/64 DPCH,
43% clipping, PAR = 7.5 dB, 3.84 MHz BW
a
ion Distortion (dBc)
Efficiency
ACPR Low
ACPR Up
0
10
20
-60
-50
-40
32 35 38 41 44 47 50
Drain
Output Power, Avg. (dBm)
Intermodul
a
b090901 gr 4
30
40
50
60
-30
-20
-10
0
Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 650 mA, ƒ = 960 MH z ,
3GPP WCDMA signal, T M1 w/ 64 DPCH ,
100% clipping, PAR = 10 dB, 3.84 MHz BW
n
nel Power Ratio (dB)
Efficiency
ACPU
0
10
20
-60
-50
-40
32 35 38 41 44 47 50
Drain
Output Power, Avg. (dBm)
Adjacent C ha
n
ACPL
b090901 gr 5
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Data Sheet 4 of 14 Rev. 04, 2012-02-23
30
40
50
60
-35
-25
i
ciency (%)
M
D (dBc)
Two-tone Drive-up
VDD = 28 V, IDQ = 650 mA,
ƒ1= 960 MHz, ƒ2= 959 MHz
3rd Order IMD
0
10
20
-55
-45
33 36 39 42 45 48 51
Eff
i
I
M
Output Power, PEP (dBm)
Efficiency
b090901 gr 8
Typical Performance (cont.)
40
50
60
70
19
20
21
22
i
ency (%)
a
in (dB)
CW Power Sweep
VDD = 30 V, IDQ = 650 mA, ƒ = 960 MHz
Gain
Effi i
0
10
20
15
16
17
34 38 42 46 50
Effic
i
G
a
Output Power, Avg. (dBm)
Effi
c
i
ency
b090901 gr 7
-30
-20
-10
0
30
40
50
60
s (dB) / ACP (dBc)
Single-carrier WCDMA Broadband
VDD = 28 V, IDQ = 620 mA, POUT = 28 W,
3GPP WCDMA signal
IML3
Efficienc
y
B
), Efficiency (%) .
IRL
-50
-40
10
20
810 855 900 945 990 1035 1080
Return Los
Frequency (MH z)
Gain
Gain (d
B
b090901 gr 6
30
40
50
60
19
20
21
22
c
iency (%)
G
ain (dB)
Two-tone Drive-up
VDD = 30 V, IDQ = 650 mA,
ƒ1= 960 MHz, ƒ2= 959 MHz
Gain
Efficienc
y
0
10
20
16
17
18
33 36 39 42 45 48 51
Effi
c
G
Output Power, PEP (dBm)
y
b090901 gr 9
Data Sheet 5 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Typical Performance (cont.)
30
40
50
60
70
19
20
21
22
23
f
ficiency (%)
G
ain (dB)
CW Drive-up
(over tempe r atur e)
VDD = 28 V, IDQ = 650 mA,
ƒ = 960 MHz
Gain
0
10
20
16
17
18
34 36 38 40 42 44 46 48 50
E
f
G
Output Power, Avg. (dBm)
+25ºC
+85°C
–30ºC
Efficiency
b090901 gr 12
20
21
22
23
w
er Gain (dB)
CW Drive-up
VDD = 28 V, ƒ = 960 MHz
I
DQ
= 980 mA
I
DQ
= 650 mA
18
19
34 36 38 40 42 44 46 48 50
Po
w
Output Pow er, Avg. (dBm)
I
DQ
= 330 mA
b090901 gr 13
-40
-30
-20
r
d Order (dBc)
Two-tone Drive-up
at selected frequencies
VDD = 28 V, IDQ = 650 mA, 1 MHz tone spaci ng
-60
-50
33 36 39 42 45 48 51
IMD 3
r
Output Power, PEP (dBm)
960 M Hz
940 M Hz
920 M Hz
b090901 gr 10
-
50
-40
-30
-20
D
(dBc)
Two-tone Intermo dulation Distortion
vs. Outpu t P ower
VDD = 28 V, IDQ = 650 mA,
ƒ1= 960 MHz, ƒ2= 959 MHz
3rd Order
7th
5th
-70
-60
50
33 36 39 42 45 48 51
IM
D
Output Power, PEP (dBm)
b090901 gr 11
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Data Sheet 6 of 14 Rev. 04, 2012-02-23
Broadband Circuit Impedance
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
900 2.3 -6.4 3.8 -2.6
920 2.2 -6.2 3.6 -2.3
940 2.1 -6.0 3.5 -2.1
960 1.9 -5.8 3.4 -1.8
980 1.8 -5.6 3.3 -1.6
See next page for reference circuit information
Z S o urce Z Load
G
S
D
Data Sheet 7 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
12
3
TL202
TL203
1
2
3
4
TL238
TL220
TL221 TL222
TL223
TL224
TL225
TL226 TL227 TL228
TL229 TL230
DCVS
DCVS
C214
33 pF
C211
2.5 pF
C210
2.5 pF
TL245
1
2
3
4
TL246
12
3
TL241
1
2
3
TL242
12
3
TL243
TL231 TL232 TL233 TL234
C215
10000000 pF
TL237
C207
10000000 pF
C204
1000000 pF
C206
33 pF
C205
10000000 pF
C213
100000 pF
12
3
TL236
12
3
TL206
C202
10000000 pF
TL201
12
3
TL219
TL244
C212
1000000 pF
C208
33 pF
C209
10000000 pF
1
2
3
TL205
TL207
C201
0.9 pF
12
3
TL240
12
3
TL204
1
2
3
TL218
12
3
TL235
12
3
TL217
12
3
TL213
1
2
3
TL214
TL208
TL210
TL211
TL212
TL239
TL209 TL215
TL216 C216
10000000 pF C203
100000 pF
PORT
2
PORT
1
RF_OUT
b090901 efa - v 1_ B D-out _1 - 27 - 2012
DRAIN DUT
TL101
TL102
TL103
TL104
TL105
TL106
TL107
TL108
TL109
1
2
3
4
TL110
TL111
TL112
C101
33 pF
C804
100000 pF
C805
100000 pF
R804
10 Ohm
TL113
R101
10 Ohm
R102
5100
12
3
TL114
12
3
TL115
12
3
TL116
12
3
TL117
12
3
TL118
12
3
TL119
12
3
TL120
TL121
R801
1000 Ohm
C102
10000 pF
C103
4.7 pF
C104
4710000 pF
C105
10000 pF
R103
10 Ohm
C106
4.8 pF
C107
4.8 pF
TL122
C108
1.5 pF
12
3
TL123 TL124
C109
8.2 pF
TL125 TL126 TL127
TL128
R802
1300 Ohm
R803
1200 Ohm
PORT
2
PORT
1
3
S2
S
C
B
E
1
2
3
4
S1
In Out
NC NC
1
23
45
67
8
S3
C803
100000 pF
C802
100000 pF C801
100000 pF
R805
10 Ohm
b090901 efa - v 1_ B D-i n_ 1- 27 - 2012
RF_IN GATE DUT
Reference Circuit
Reference circuit input schematic for ƒ = 960 MHz
Reference circuit input schematic for ƒ = 960 MHz
ε= 3.48
H = 20 mil
RO/RO4350B1
r
ε= 3.48
H = 20 mil
RO/RO4350B1
r
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Data Sheet 8 of 14 Rev. 04, 2012-02-23
Reference Circuit (cont.)
Reference Circuit Assembly
DUT PTFB090901EA or PTFB090901FA
Test Fixture Part No. LTN/PTFB090901EA (PTFB090901EA) LTN/PTFB090901FA (PTFB090901FA)
PCB Rogers RO4350, 0.508 mm [0.020”] thick, 2 oz. copper, εr = 3.48
Find Gerber fi les for this test fi xture on the Infi neon Web site at http://www.infi neon.com/rfpower
Electrical Characteristics at 960 MHz
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Input
TL102 0.0064 λ, 69.6 Ω W = 0.65, L = 1.23 W = 25, L = 48
TL103 0.1238
λ, 51.53 Ω W = 1.1, L = 23.38 W = 43, L = 921
TL104 0.1658
λ, 69.6 Ω W = 0.65, L = 31.91 W = 25, L = 1256
TL105 0.0205
λ, 69.6 Ω W = 0.65, L = 3.94 W = 25, L = 155
TL106 0.0014
λ, 26.81 Ω W = 2.79, L = 0.25 W = 110, L = 10
TL107 0.0195
λ, 7.47 Ω W = 12.37, L = 3.37 W = 487, L = 133
TL108 0.0014
λ, 26.81 Ω W = 2.79, L = 0.25 W = 110, L = 10
TL109 0.0369
λ, 51.53 Ω W = 1.1, L = 6.97 W = 43, L = 275
TL114, TL115, TL116, 0.014 λ, 26.81 Ω W1 = 2.79, W2 = 2.79, W3 = 2.54 W1 = 110, W2 = 110, W3 = 100
TL117, TL118, TL119
TL120 0.0037
λ, 7.47 Ω W1 = 12.37, W2 = 12.37, W3 = 0.65 W1 = 487, W2 = 487, W3 = 25
TL122 0.0294
λ, 7.47 Ω W = 12.37, L = 5.08 W = 487, L = 200
TL123 0.0094
λ, 51.53 Ω W1 = 1.1, W2 = 1.1, W3 = 1.78 W1 = 43, W2 = 43, W3 = 70
TL124 0.0183
λ, 51.53 Ω W = 1.1, L = 3.45 W = 43, L = 136
TL126, TL128 0.0055 λ, 34.08 Ω W = 2.03, L = 1.02 W = 80, L = 40
Data Sheet 9 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Electrical Characteristics at 960 MHz (cont.)
Transmission Electrical Dimensions: mm Dimensions: mils
Line Characteristics
Output
TL201 0.055 λ, 9.74 Ω W = 9.25, L = 9.65 W = 364, L = 380
TL202 0.010
λ, 11.08 Ω W1 = 8, W2 = 8, W3 = 1.78 W1 = 315, W2 = 315, W3 = 70
TL203 0.081
λ, 11.08 Ω W = 8, L = 14.2 W = 315, L = 559
TL204, TL243 0.008 λ, 47.12 Ω W1 = 1.27, W2 = 1.27, W3 = 1.52 W1 = 50, W2 = 50, W3 = 60
TL205, TL214 0.011 λ, 47.12 Ω W1 = 1.27, W2 = 1.27, W3 = 2.03 W1 = 50, W2 = 50, W3 = 80
TL206, TL213, TL217, 0.009 λ, 9.74 Ω W1 = 9.25, W2 = 9.25, W3 = 1.52 W1 = 364, W2 = 364, W3 = 60
TL219
TL207 0.007
λ, 47.12 Ω W = 1.27, L = 1.4 W = 50, L = 55
TL209 0.030
λ, 9.74 Ω W = 9.25, L = 5.21 W = 364, L = 205
TL210 0.075
λ, 47.12 Ω W = 1.27, L = 14.05 W = 50, L = 553
TL211, TL232 0.002 λ, 47.12 Ω W = 1.27, L = 0.38 W = 50, L = 15
TL212 0.060
λ, 47.12 Ω W = 1.27, L = 11.2 W = 50, L = 441
TL215 0.055
λ, 9.74 Ω W = 9.25, L = 9.65 W = 364, L = 380
TL216 0.007
λ, 47.12 Ω W = 1.27, L = 1.4 W = 50, L = 55
TL218 0.007
λ, 47.12 Ω W1 = 1.27, W2 = 1.27, W3 = 1.27 W1 = 50, W2 = 50, W3 = 50
TL221 0.006
λ, 38.69 Ω W = 1.7, L = 1.14 W = 67, L = 45
TL222, TL223 0.061 λ, 38.69 Ω W = 1.7, L = 11.3 W = 67, L = 445
TL224 0.030
λ, 51.46 Ω W = 1.1, L = 5.69 W = 43, L = 224
TL225 0.012
λ, 38.69 Ω W = 1.7, L = 2.22 W = 67, L = 87
TL226 0.073
λ, 11.08 Ω W = 8, L = 12.7 W = 315, L = 500
TL231 0.060
λ, 47.12 Ω W = 1.27, L = 11.2 W = 50, L = 441
TL233 0.075
λ, 47.12 Ω W = 1.27, L = 14.05 W = 50, L = 553
TL234 0.030
λ, 9.74 Ω W = 9.25, L = 5.21 W = 364, L = 205
TL235, TL236 0.014 λ, 9.74 Ω W1 = 9.25, W2 = 9.25, W3 = 2.36 W1 = 364, W2 = 364, W3 = 93
TL237, TL239 0.082 λ, 47.12 Ω W = 1.27, L = 15.35 W = 50, L = 604
TL240, TL241 0.009 λ, 47.12 Ω W1 = 1.27, W2 = 1.27, W3 = 1.78 W1 = 50, W2 = 50, W3 = 70
TL242 0.007
λ, 47.12 Ω W1 = 1.27, W2 = 1.27, W3 = 1.27 W1 = 50, W2 = 50, W3 = 50
TL245 0.017
λ, 11.08 Ω W = 8, L = 2.92 W = 315, L = 115
Reference Circuit (cont.)
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Data Sheet 10 of 14 Rev. 04, 2012-02-23
R803
RF_IN
C212
C208 C213
C214
C203
C215
R804
R801
C802
C804
S1
S3
S2
C805
C205 C206
C211
+
10 μF
+
10 μF
+
10 μF
+
10 μF
RF_OUT
R802
C101
C106
C107
C104
C109
C103
C108
C105
C803
C102
R805 R103
C207
R102
C801
R101
C204
C201C210
C216
C202
C209
b 090901 efa - v1 _CD _1- 27 -2012
V
DD
V
DD
PTFB090901EA
PTFB090901_IN_01 R04350, .020 (62) PTFB090901_OUT_01
R04350, .020 (62)
V
DD
Reference Circuit (cont.)
Reference circuit assembly diagram (not to scale)
Component ID Description Suggested Supplier P/N
Input
C101 Chip capacitor, 33 pF ATC 100B330FW500XB
C102 Chip capacitor, 10000 pF ATC 200B103MW
C103 Chip capacitor, 4.7 pF ATC 100B4R7BW500XB
C104 Chip capacitor, 4.7 µF Digi-Key 493-2372-2-ND
C105 Chip capacitor, 10000 pF ATC 200B103MW
C106, C107 Chip capacitor, 4.8 pF ATC 100B4R8BW500XB
C108 Chip capacitor, 1.5 pF ATC 100B1R5BW500XB
C109 Chip capacitor, 8.2 pF ATC 100B8R2BW500XB
C801, C804 Chip capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C802, C803, C805 Chip capacitor, 1,000 pF Digi-Key PCC1772CT-ND
R801 Resistor, 1.0k
Ω Digi-Key P1.0KECT-ND
R802 Resistor, 1.3k
Ω Digi-Key P1.3KECT-ND
R803 Resistor, 1.2k
Ω Digi-Key P1.2KECT-ND
R804, R805 Resistor, 10 Ω Digi-Key P10ECT-ND
table cont. next page
Data Sheet 11 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Component ID Description Suggested Supplier P/N
Input (cont.)
S1 Transistor Digi-Key BCP5616TA-ND
S2 Potentiometer, 2k Ω Digi-Key 3224W-202ECT-ND
S3 Voltage Regulator Digi-Key LM78L05ACM-ND
Output
C201 Chip capacitor, 1 pF ATC 100B0R9BW500XB
C202, C207, C215, Chip capacitor, 1.0 µF ATC 281M5002106K
C216
C203 Chip capacitor, 100000 pF Digi-Key PCC104BCT-ND
C204 Chip capacitor, 1000000 pF Digi-Key 478-3993-2-ND
C205, C209 Capacitor, 10 µF Digi-Key 587-1818-2-ND
C206, C208 Chip capacitor, 33 pF ATC 100B330JW500XB
C210, C211 Chip capacitor, 3 pF ATC 100B2R5BW500XB
C212 Chip capacitor, 1000000 pF Digi-Key 478-3993-2-ND
C213 Chip capacitor, 100000 pF Digi-Key PCC104BCT-ND
C214 Chip capacitor, 33 pF ATC 100B330FW500XB
See next page for package outline
Reference Circuit (cont.)
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
Data Sheet 12 of 14 Rev. 04, 2012-02-23
Package Outline Specifications
Package H-36265-2
Diagram Notes—unless otherwise specifi ed:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specifi ed otherwise.
4. Pins: D – drain, S – source, G – gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Exposed metal plane on top and bottom of ceramic insulator.
7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
2X 7.11
[.280]
45° X 2.03
[.080]
3.05
[.120] C
L
C
L
FLANGE
9.78
[.385]
2X R 1.5 2
[R.060]
4X R0.63
[R.025] MAX
6.
D
S
G
15.49 ±.51
[.610±.020]
4X R1.52
[R.060]
LID
10.16±.25
[.400±.010]
2.66±.51
[.105±.020]
ALL FOUR
CORNERS
15.23
[.600]
SPH 1.57
[.062]
20.31
[.800]
1.02
[.040]
10.16 ±.25
[.400±.010]
6.
3.61±.38
[.142±.015]
h - 36265 -2_ po _ 09 -08 - 2011
Data Sheet 13 of 14 Rev. 04, 2012-02-23
PTFB090901EA
PTFB090901FA
Confidential, Limited Internal Distribution
3.61±.38
[.142±.015]
10.16
[.400]
S
1.02
[.040]
10.16±.25
[.400±.010]
SPH 1.57
[.062]
4X R0.63
[R.025] MAX
FLANGE
10.16
[.400]
C
L
C
L
LID
10.16±.25
[.400±.010]
15.49±.51
[.610±.020]
2.66±.51
[.105±.020]
2X 7.11
[.280]
6. ALL FOUR
CORNERS
D
G
45° X 2.03
[.080]
H-37265 - 2_po _ 02-18 -2010
Package Outline Specifications (cont.)
Package H-37265-2
Diagram Notes—unless otherwise specifi ed:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specifi ed otherwise.
4. Pins: D – drain, S – source, G – gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Exposed metal plane on top of ceramic insulator.
7. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infi neon Internet page
http://www.infi neon.com/rfpower
Edition 2012-02-23
Published by
Infi neon Technologies AG
81726 Munich, Germany
© 2010 Infi neon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infi neon Technologies Offi ce (www.infi neon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infi neon Technologies Offi ce.
Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
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PTFB090901EA V1 / PTFB090901FA V1
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Page Subjects (major changes since last revision)
Data Sheet 14 of 14 Rev. 04, 2012-02-23
Revision History: 2012-02-23 Data Sheet
Previous Version: 2010-11-05, Advance Specifi cation
all Products released to production: specifi cations fi nalized, circuit information added.