Split Dual Si/SiC
Hybrid IGBT Module
150 Amperes/1200 Volts
111/18/14 Rev. 1
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID1215003 Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Description:
Powerex IGBT Modules are
designed for use in high frequency
applications; upwards of 30 kHz
for hard switching applications
and 80 kHz for soft switching
applications. Each module consists
of two IGBT Transistors with each
transistor having a reverse-
connected super-fast recovery
free-wheel silicon carbide Schottky
diode. All components and inter-
connects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
£ Low ESW(off)
£ Aluminum Nitride Isolation
£ Discrete Super-Fast
Recovery Free-Wheel Silicon
Carbide Schottky Diode
£ Low Internal Inductance
£ 2 Individual Switches
per Module
£ Isolated Baseplate for Easy
Heat Sinking
£ Copper Baseplate
£ RoHS Compliant
Applications:
£ Energy Saving Power
Systems such as:
Fans; Pumps; Consumer
Appliances
£ High Frequency Type Power
Systems such as:
UPS; High Speed Motor Drives;
Induction Heating; Welder;
Robotics
£ High Temperature Power
Systems such as:
Power Electronics in Electric
Vehicle and Aviation Systems
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 4.32 109.8
B 2.21 56.1
C 0.71 18.0
D 3.70±0.02 94.0±0.5
E 2.026 51.46
F 3.17 80.5
G 1.96 49.8
H 1.00 25.5
K 0.87 22.0
L 0.266 6.75
M 0.26 6.5
N 0.59 15.0
P 0.586 14.89
Dimensions Inches Millimeters
Q 0.449 11.40
R 0.885 22.49
S 1.047 26.6
T 0.15 3.80
U 0.16 4.0
V 0.30 7.5
W 0.045 1.15
X 0.03 0.8
Y 0.16 4.0
Z 0.47 12.1
AA 0.17 Dia. 4.3 Dia.
AB 0.10 Dia. 2.5 Dia.
AC 0.08 Dia. 2.1 Dia.
G1 (15 - 16)
E1 (13 - 14)
C1 (10 - 12)
E2 C2 E1 C1
S1G1S2G2
E1 (7 - 9)
G2 (19 - 20)
E2 (17 - 18)
C2 (4 - 6)
E2 (1 - 3)
P Q
Q
Q
T
R
S
D
1 2 3 4 5 6 7 8 9 10 11 12
15 14 1316
19 18 1720
F
A
L
W
V
T
G
B
MN
C
H K
DETAIL "A"
X
U
DETAIL "A"
E
AA
AB
Z
Y
AC
DETAIL "B"
DETAIL "B"
2
QID1215005
Split Dual Si/SiC Hybrid IGBT Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/18/14 Rev. 1
Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Ratings Symbol QID1215003 Units
Junction Temperature Tj –40 to 150 °C
Storage Temperature Tstg –40 to 150 °C
Collector-Emitter Voltage (G-E Short) VCES 1200 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 25°C) IC 150* Amperes
Peak Collector Current ICM 300* Amperes
Emitter Current** (TC = 25°C) IE 150* Amperes
Repetitive Peak Emitter Current (TC = 25°C)** IEM 300* Amperes
Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) PC 960 Watts
Mounting Torque, M6 Mounting — 40 in-lb
Weight — 270 Grams
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) VISO 2500 Volts
IGBT Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 15mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 150A, VGE = 15V, Tj = 25°C — 5.0 6.5 Volts
IC = 150A, VGE = 15V, Tj = 125°C — 5.0 — Volts
Total Gate Charge QG VCC = 600V, IC = 150A, VGE = 15V — 680 — nC
Input Capacitance Cies — — 24 nf
Output Capacitance Coes VCE = 10V, VGE = 0V — — 2.0 nf
Reverse Transfer Capacitance Cres — — 0.45 nf
Inductive Turn-on Delay Time td(on) VCC = 600V, IC = 150A, — — TBD ns
Load Rise Time tr VGE1 = VGE2 = 15V, — — TBD ns
Switch Turn-off Delay Time td(off) RG = 2.1Ω, — — TBD ns
Time TimeFall Time tf Inductive Load Switching Operation — — TBD ns
* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
**Represents characteristics of the anti-parallel, emitter-to-collector silicon carbide Schottky diode (FWDi).
QID1215005
Split Dual Si/SiC Hybrid IGBT Module
150 Amperes/1200 Volts
3
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/18/14 Rev. 1
Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
Reverse Schottky Diode Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Diode Forward Voltage VFM IF = 150A, VGE = -5V — 1.45 1.75 Volts
IF = 150A, VGE = -5V, Tj = 175°C — 1.95 2.35 Volts
Diode Reverse Current IR VR = 1200V — 1.8 10 mA
VR = 1200, Tj = 175°C — 12 66.6 mA
Diode Capacitive Charge QC VR = 1200V, IF = 150A, di/dt = 2200A/μs — 600 — nC
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT 1/2 Module, — — 0.13 °C/W
TC Reference Point Under Chips
Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi 1/2 Module, TC Reference — — 0.25 °C/W
TC Reference Point Under Chips
Contact Thermal Resistance Rth(c-f) Per 1/2 Module, Thermal Grease Applied — 0.04 — °C/W
External Gate Resistance RG 3.1 — 31 Ω
Internal Inductance Lint IGBT Part — 10 — nH
4
QID1215005
Split Dual Si/SiC Hybrid IGBT Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/18/14 Rev. 1
Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
10
6 8 10 1412 16 18 20
8
6
4
2
0
COLLECTOR CURRENT, IC, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
300
250
200
150
100
50
0
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
50
0
100
150
300
200
250
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
9
4
5
6
3
050 150
7
2
8
1
0300200 250100
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
Tj = 25C
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
0515 20
VGE = 10V
Tj = 25C
Tj = 125C
IC = 300A
IC = 150A
IC = 60A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
0 2 4 6 8 10
VGE = 20V
10
11
12
13
14
15
9
8
Tj = 25oC
10
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE = 15V
Tj = 25C
Tj = 125C
QID1215005
Split Dual Si/SiC Hybrid IGBT Module
150 Amperes/1200 Volts
5
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/18/14 Rev. 1
Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
COLLECTOR CURRENT, IC, (AMPERES)
103
101102
102
100
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
103
TBD
0 0.5 1.0 1.5 2.52.0 3.0
0
150
100
125
50
75
25
FORWARD VOLTAGE, VF, (VOLTS)
FORWARD CURRENT, IF, (μA)
FREE-WHEEL SCHOTTKY DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
Tj = 25°C
Tj = 125°C
Tj = 150°C
Tj = 175°C
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
102
101
100
10-1
101
10-1
VGE = 0V
Cies
Coes
Cres
GATE CHARGE, QG, (nC)
GATE CHARGE VS. VGE
20
0
16
12
8
4
0
200 400 600 1000800
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
VCC = 600V
VCC = 400V
IC = 150A
6
QID1215005
Split Dual Si/SiC Hybrid IGBT Module
150 Amperes/1200 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/18/14 Rev. 1
Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
101
101102
100
10-1
VCC = 600V
VGE = 15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(TYPICAL)
ESW(on)
ESW(off)
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE)
102
100101
101
100
VCC = 600V
VGE = ±15V
IC = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
ESW(on)
ESW(off)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101102
101
100
VCC = 600V
VGE = ±15V
RG = 3.1Ω
Tj = 125°C
Inductive Load
C Snubber at Bus
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(TYPICAL)
TBD TBD
TBD
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
100101
101
100
VCC = 600V
VGE = ±15V
IE = 100A
Tj = 125°C
Inductive Load
C Snubber at Bus
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(TYPICAL)
TBD
QID1215005
Split Dual Si/SiC Hybrid IGBT Module
150 Amperes/1200 Volts
7
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
11/18/14 Rev. 1
Preliminary
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.13°C/W
(IGBT)
Rth(j-c) =
0.25°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')