MBR2070CT - MBR20100CT 20A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection TO-220AB Low Power Loss, High Efficiency L B High Surge Capability High Current Capability and Low Forward Voltage Drop C For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications D K A Lead Free/RoHS Compliant (Note 3) Mechanical Data * * * * * * * M 1 2 3 E Case: TO-220AB G Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 J N Moisture Sensitivity: Level 1 per J-STD-020C Polarity: As Marked on Body H H Terminals: Finish - Bright Tin. Solderable per MIL-STD-202, Method 208 P Pin 1 Pin 2 Pin 3 Marking: Type Number Case Dim Min Max A 14.48 15.75 B 10.00 10.40 C 2.54 3.43 D 5.90 6.40 E 2.80 3.93 G 12.70 14.27 H 2.40 2.70 J 0.69 0.93 K 3.54 3.78 L 4.07 4.82 M 1.15 1.39 N 0.30 0.50 P 2.04 2.79 All Dimensions in mm Weight: 2.24 grams (approx) Maximum Ratings and Electrical Characteristics @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC = 125C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage Drop Symbol MBR 2070CT MBR 2080CT MBR 2090CT MBR 20100CT Unit VRRM VRWM VR 70 80 90 100 V VR(RMS) 49 56 63 70 V IO 20 A IFSM 150 A @ IF = 10A, Tj = 125C @ IF = 10A, Tj = 25C @ IF = 20A, Tj = 125C @ IF = 20A, Tj = 25C VFM 0.75 0.85 0.85 0.95 V @ TA = 25C @ TA = 125C IRM 0.15 150 mA Peak Reverse Current at Rated DC Blocking Voltage Cj 1000 pF Typical Thermal Resistance Junction to Case (Note 1) RqJC 2.0 C/W Voltage Rate of Change dV/dt 10000 V/ms Tj, TSTG -65 to +150 -65 to +175 C Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted on heatsink. 2. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30019 Rev. 5 - 2 1 of 2 www.diodes.com MBR2070CT-MBR20100CT a Diodes Incorporated 50 IC, INSTANTANEOUS FWD CURRENT (A) IO, AVERAGE RECTIFIED CURRENT (A) 20 16 12 8 4 10 1.0 0.1 0 0 50 100 0.2 150 TC, CASE TEMPERATURE ( C) Fig. 1 Fwd Current Derating Curve 0.6 0.8 1.0 VF, INSTANTANEOUS FWD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 300 4000 250 Cj, JUCTION CAPACITANCE (pF) IFSM, PEAK FWD SURGE CURRENT (A) 0.4 200 150 100 50 1000 0 100 1 10 0.1 100 Ordering Information 1.0 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60Hz Fig. 3 Max Non-Repetitive Surge Current (Note 4) Device Packaging Shipping MBR20xxCT-F* TO-220AB 50/Tube * xx = Device type, e.g. MBR2080CT-F Notes: 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf. DS30019 Rev. 5 - 2 2 of 2 www.diodes.com MBR2070CT-MBR20100CT