TS, LL4148 Switching Diode REVERSE VOLTAGE 75 Volts FORWARD CURRENT 0.15 Amperes Features @ Sillcon eltaxial planar diode @ High speed switching diode e@ 500mW bower dissipation Mechanical Data e@ Cases:Min-MELF glass case e Polarity:Color band denotes cathode @ Weight:Approx.0.05 grams MINI MELF(LL-34) + 0.063(1.6) 0.055(1.4) 0.020(0.5) 0.020(0.5) 0.012(0.3) 0.146(3.7) | 0.012(0.3) 0.130(3.3) Inch(mm) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25C ambient temperature unless otherwise specified. Maximun Ratings Type Number LL4148 Units DC Block Voltage VR 75 Vv Non-Peak Reverse Voltage VRM 100 V Average Forward Rectified Current Half Wave Rectification with Resist load lo 150 mA Forward Surge Current at t<1s and Tj<25C IFSm 500 mA Power Classipation at Tj Ptot 500") mw Junction Temperature T 175 % Storage Temperature Range TsTc -65 to +175 % NOTE:(1)Valid provided that Electrical Characteristics Typ Max Units Forward Voltage at IF=10mA VE _ 4 Leakage Current at VR=20V IR - 25 nA at VR=75V 5 IR - 5 uA at VR=20V,Tj=150C IR - 50 uA Capacitance at VF=VR=0V Ci _ 4 pF Voltage Rise when Switching ON lesled with 50mA pulsee Vit - 25 Vv tp 0.1us Rise Time<30ns Ip=5 to 100Hz Roverse Recovery Time from IF=10mA trr _ 4 ns VR=V,RL=100 2 at IR=1mA Thermal Resistance Junction to Ambient R 6A - - 350 K/W Rectification Effioiancy at 100MHz,Ver<2V nv 0.45 - - - NOTE: (1)Valid provided that electrodes are kept at ambient temperature.RATING AND CHARACTERISTIC CURVES LL4148 TS, FIG.4-RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT Ly ri D.U.T. 602 VRF=2V = 2nF 5KQ Vb oO FIG.6-LEAKAGE CURRENT VERSUS JUNCTION TEMPERATURE 0 100 200C FIG.5- RELATIVE CAPACITANCE VERSUS VOLTAGE Ctot(Vr) Ctot(0V) 0 2 4 6 8 10V FIG.7-DYNAMIC FORWARD RESISTANCE VERSUS FORWARD CURRENT 102 mA 10? 10" 1 10