RRS070N03 Transistor 4V Drive Nch MOSFET RRS070N03 zStructure Silicon N-channel MOSFET zDimensions (Unit : mm) SOP8 zFeatures 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (SOP8). zApplications Switching Each lead has same dimensions zEquivalent circuit zPackaging dimensions Package (8) (7) (6) Basic ordering unit (pieces) 2500 2 RRS070N03 (1) 1 (2) (3) 1 ESD Protection Diode. 2 Body Diode. Parameter Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS 20 V Continuous ID 7 A Pulsed IDP 28 A Continuous Is 1.6 A Pulsed Isp 28 A Total power dissipation PD 2.0 W Channel temperature Tch 150 C Range of storage temperature Tstg -55 to +150 C Drain current (1) (2) (3) (4) (4) (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. zAbsolute maximum ratings (Ta=25C) Source current (Body diode) (5) TB Code Type (8) (7) (6) (5) Taping 1 Pw 10s, Duty cycle 1% 2 MOUNTED ON A CERAMIC BOARD. zThermal resistance Parameter Channel to Ambient Symbol Limits Unit Rth (ch-a) 62.5 C / W Mounted on a ceramic board. 1/4 RRS070N03 Transistor zElectrical characteristics (Ta=25C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Min. Max. 10 30 1.0 20 26 28 RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Typ. 1 2.5 28 37 40 4.5 900 140 90 13 28 33 7 7.7 3.0 2.0 11.6 Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=20V, VDS=0V ID= 1mA, V GS=0V VDS= 30V, VGS=0V VDS= 10V, ID= 1mA ID=7A, VGS= 10V ID= 7A, VGS= 4.5V ID= 7A, VGS= 4.0V VDS= 10V, ID= 7A VDS= 10V VGS=0V f=1MHz VDD 15V ID= 3.5A VGS= 10V RL=4.29 RG=10 VDD 15V VGS= 5V ID= 7A RL=2.14, RG=10 Pulsed zBody diode characteristics (Source-Drain) (Ta=25C) Parameter Forward Voltage Symbol VSD Min. Typ. Max. Unit 1.2 V Test Conditions Is=7A, VGS=0V 2/4 RRS070N03 Transistor zElectrical characteristic curves Ta=-25C Ta=25C Ta=75C 1 Ta=125C 0.1 0.01 0.001 1.0 1.5 2.0 2.5 3.0 VGS=10V Pulsed Ta=125C Ta=75C Ta=25C Ta=-25C 10 0.01 GATE-SOURCE VOLTAGE : VGS [V] 1 10 0.1 1 10 100 Ta=25C Pulsed VGS=4.0V VGS=4.5V VGS=10V 10 0.1 DRAIN CURRNT : ID [A] 1 10 100 DRAIN CURRNT : ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current() CAPACITANCE : C [pF] 0.1 0.01 0.1 1 10 100 DRAIN CURRNT : ID [A] Fig.7 Forward Transfer Admittance vs. Drain Current Ta=25C Pulsed 90 80 ID=7A 70 60 50 40 30 20 ID=3.5A 10 0 0 5 15 10 GATE-SOURCE VOLTAGE : VGS [V] Ta=25C f=1MHz VGS=0V Ta=-25C 1 100 100 10000 10000 VDS=10V Pulsed Ta=25C Ta=75C Ta=125C 10 Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(IV) Resistance vs. Gate-Source Voltage 100 10 1 Fig.3 Static Drain-Source On-State Resistance vs. Drain Current() Ciss 1000 Coss 100 Crss 10 0.01 0.1 1 10 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.8 Typical Capacitance vs. Drain-Source Voltage tf SWITCHING TIME : t [ns] 10 0.01 0.1 DRAIN CURRNT : ID [A] 100 VGS=4V Pulsed Ta=125C Ta=75C Ta=25C Ta=-25C 10 0.01 Fig.2 Static Drain-Source On-State Resistance vs. Drain Current() STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] 100 FORWARD TRANSFER ADMITTANCE : Yfs [S] 100 VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta=-25C DRAIN CURRNT : ID [A] Fig.1 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] 0.1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] 10 100 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] VDS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) [m] DRAIN CURRNT : ID [A] 100 100 1000 Ta=25C VDD=15V VGS=10V RG=10 Pulsed td(off) td(on) tr 100 10 1 0.01 0.1 1 10 DRAIN CURRNT : ID [A] Fig.9 Switching Characteristics 3/4 RRS070N03 Transistor 100 Ta=25C VDD=15V ID=7A RG=10 Pulsed VGS=0V Pulsed SOURCE CURRENT : Is [A] GATE-SOURCE VOLTAGE : VGS [V] 10 5 0 0 5 10 15 Ta=125C Ta=75C Ta=25C Ta=-25C 10 1 0.1 0.01 0.0 20 0.5 TOTAL GATE CHARGE : Qg [nC] 1.0 1.5 SOURCE-DRAIN VOLTAGE : VSD [V] Fig.10 Dynamic Input Characteristics Fig.11 Source Current vs. Source-Drain Voltage zMeasurement circuits Pulse Width VGS ID VDS 90% 50% 10% VGS RL VDS 50% 10% D.U.T. 10% RG VDD 90% td(on) ton Fig.12 Switching Time Test Circuit 90% td(off) tr tr toff Fig.13 Switching Time Waveforms VG VGS ID VDS RL IG (Const.) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.14 Gate Charge Test Circuit Fig.15 Gate Charge Waveform 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright (c) 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0