RRS070N03
Transistor
1/4
4V Drive
Nch
MOSFET
RRS070N03
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Built-in G-S Protection Diode.
2) Small Surface Mount Package (SOP8).
zApplications
Switching
zDimensions (Unit : mm)
zPackaging dimensions
Package
Code Taping
Basic ordering unit (pieces)
RRS070N03
TB
2500
Type
zA bsolute maximum ratings (Ta=25°C)
30
±20
±7
±28
1.6
28
2.0
150
VDSS
VGSS
PD
Tch
V
V
A
W
ID
IDP A
Is
Isp
A
A
Tstg
Symbol Limits Unit
Parameter
Pulsed
Pulsed
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of
storage temperature
Source current
(Body diode)
°C
°C
−55 to +150
∗1 Pw 10µs, Duty cycle 1%
∗2 MOUNTED ON A CERAMIC BOARD.
Continuous
Continuous
zThermal resistance
Rth (ch-a) 62.5 °C / W
Symbol Limits Unit
Parameter
Channel to Ambient
∗
Mounted on a ceramic board.
∗
Each lead has same dimensions
SOP8
∗ A protection diode is included between the gate
and the source terminals to protect the diode
against static electricity when the product is in
use.Use a protection circuit when the fixed
voltage are exceeded.
(1)
Source
(2) Source
(3) Source
(4) Gate
(5) Drain
(6) Drain
(7) Drain
(8) Drain
(1) (2) (3)
(8) (7) (6) (5)
(1) (2) (3) (4)
(4)
∗2
∗2 Body Diode.
(8) (7) (6) (5)
∗1
∗1 ESD Protection Diode.
z
Equivalent circuit
RRS070N03
Transistor
2/4
zElectrical characteristics (Ta=25 °C)
Parameter Symbol
I
GSS
Y
fs
Min. Typ. Max. Unit Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
±10 V
GS
=±20V, V
DS
=0V
V
DD
15V
30 VI
D
= 1mA, V
GS
=0V
1
1.0 2.5 V
20 28
26 37
28 40
4.5 S
900 pF V
DS
= 10V
140
90 pF V
GS
=0V
13 pF f=1MHz
28 ns
33 ns
7ns
7.7 ns
3.0 11.6 nC
2.0 nC V
GS
=
5V
nC I
D
=
7A
V
DD
15V
I
D
= 3.5A
V
GS
= 10V
µA
µA
mΩ
mΩ
mΩ
R
L
=4.29Ω
R
G
=10Ω
R
L
=2.14Ω, R
G
=10Ω
∗Pulsed
V
DS
= 30V, V
GS
=0V
V
DS
= 10V, I
D
= 1mA
I
D
=7A, V
GS
= 10V
I
D
= 7A, V
GS
= 4.0V
V
DS
= 10V, I
D
= 7A
I
D
= 7A, V
GS
= 4.5V
zBody diode characteristics (Source-Drain) (Ta=25°C)
Parameter Test Conditions
V
UnitMin. Typ.
1.2
Max.
I
s
=7A, V
GS
=0V
V
SD
Symbol
Forward Voltage
RRS070N03
Transistor
3/4
zElectrical characteristic curves
GATE-SOURCE VOLTAGE : V
GS
[V]
Fig.1 Typical Transfer Characteristics
DRAIN CURRNT : I
D
[A]
0.001
0.01
0.1
1
10
100
3.02.52.01.51.0
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
V
DS
=10V
Pulsed
10
100
1 10 1000.10.01
VGS=10V
Pulsed
DRAIN CURRNT : ID [A]
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current(Ι)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
: RDS(on) [mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current(ΙΙ)
10
100
1 10 1000.10.01
V
GS
=4.5V
Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
: R
DS
(on) [mΩ]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
DRAIN CURRNT : I
D
[A]
10
100
1 10 1000.10.01
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(ΙΙΙ)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
: R
DS
(on) [mΩ]
DRAIN CURRNT : I
D
[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
VGS=4V
Pulsed
10
100
10 10010.1
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(I
V
)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
: R
DS
(on) [mΩ]
DRAIN CURRNT : I
D
[A]
VGS=4.0V
VGS=4.5V
VGS=10V
Ta=25°C
Pulsed
0
100
90
80
70
60
50
40
30
20
10
10 1550
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
STATIC DRAIN-SOURCE ON-STATE RESISTANCE
: R
DS
(on) [mΩ]
GATE-SOURCE VOLTAGE : V
GS
[V]
I
D
=7A
I
D
=3.5A
Ta=25°C
Pulsed
1 10 1000.10.01
Fig.7 Forward Transfer Admittance vs.
Drain Current
DRAIN CURRNT : I
D
[A]
1
0.1
10
100
FORW ARD TRANSFER ADMITTANCE
: Yfs [S]
V
DS
=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
1 10 1000.10.01
DRAIN-SOURCE VOLTAGE : V
DS
[V]
10
100
1000
10000
CAPACITANCE : C [pF]
Ciss
Coss
Crss
Ta=25°C
f=1MHz
V
GS
=0V
SWITCHING TIME : t [ns]
Fig.9 Switching Characteristics
DRAIN CURRNT : I
D
[A]
1100.10.01
1
10
100
10000
1000
Ta=25°C
V
DD
=15V
V
GS
=10V
R
G
=10
Ω
Pulsed
tf
tr
td(off)td(on)
RRS070N03
Transistor
4/4
Fig.10 Dynamic Input Characteristics
GATE-SOURCE VOLTAGE : V
GS
[V]
TOTAL GATE CHARGE : Qg [nC]
0
10
15 2010 50
5
Ta=25°C
V
DD
=15V
I
D
=7A
R
G
=10
Ω
Pulsed
0.01
0.1
10
100
1.0 1.50.50.0
SOURCE CURRENT : Is [A]
Fig.11 Source Current vs.
Source-Drain Voltage
SOURCE-DRAIN VOLTAGE : V
SD
[V]
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
V
GS
=0V
Pulsed
zMeasurement circuits
Fig.12 Switching Time Test Circuit
V
GS
R
G
V
DS
D.U.T.
I
D
R
L
V
DD
Fig.13 Switching Time Waveforms
90% 50%50%
10% 10%
90% 90%
10%
V
GS
V
DS
t
on
t
off
t
r
t
d(on)
t
r
t
d(off)
Pulse Width
Fig.14 Gate Charge Test Circuit
VGS
IG (Const.)
RG
VDS
D.U.T.
ID
RL
VDD
Fig.15 Gate Charge Waveform
V
G
V
GS
Charge
Q
g
Q
gs
Q
gd
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
Appendix1-Rev2.0
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Copyright © 2008 ROHM CO.,LTD.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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FAX : +81-75-315-0172
Appendix
