PNP PLASTIC POWER TRANSISTOR CSB772
TO126
Plastic Package
Complementary CSD882
Audio Fre
uenc
Power Am
lifier and Low S
eed Switchin
ABSOLUTE MAXIMUM RATINGS(Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL VALUE UNIT
Collector Base Voltage(open emitter) VCBO >40 V
Collector Emitter Voltage (open base) VCEO >30 V
Emitter Base Voltage(open collector) VEBO >5.0 V
Collector Current (DC) IC<3.0 A
Collector Current (Pulse) (1) IC<7 A
Base Current (DC) IB<0.6 A
Total Power Dissipation@ Tc=25ºC Ptot <10 W
Total Power Dissipation@ Ta=25ºC Ptot <1.0 W
Junction Temperature Tj<150
C
Storage Temperature Tstg -65 to +150
C
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-Cut off Current ICBO IE =0, VCB =30V 1.0 µA
Emitter cut off Current IEBO VEB =3V, IC =0 1.0 µA
Breakdown Voltages VCEO IC =1mA, IB =0 30 V
VCBO IC =1mA, IE =0 40 V
VEBO IC =0, IE =1mA 5V
Saturation Voltages VCE (sat)* IC=2A, IB=0.2A 0.5 V
VBE (sat)* 2.0 V
DC Current Gain hFE*I
C=20mA,VCE=2V 30
hFE*I
C=1.0A,VCE=2V** 60 400
Output Capacitance at f=1MHz COIE =0, VCB =10V 55 pF
Transition Frequency fTIC=0.1A, VCE=5V 80 MHz
* Pulse test : pulse width < 350µs, Duty cycle < 2%
(1) PW = 10ms, Duty Cycle < 50%
**hFE classification : R :60-120 Q :100-200 P: 160-320 E: 200-400
C
E
Continental Device India Limited Data Sheet Page 1 of 3
Continental Device India Limited
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