KSE170/171/172 KSE170/171/172 Low Power Audio Amplifier Low Current, High Speed Switching Applications TO-126 1 PNP Epitaxial Silicon Transistor 1. Emitter 2.Collector 3.Base Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter : KSE170 : KSE171 : KSE172 Value - 60 - 80 - 100 Units V V V VCEO Collector-Emitter Voltage : KSE170 : KSE171 : KSE172 - 40 - 60 - 80 V V V VEBO Emitter-Base Voltage -7 V IC Collector Current (DC) -3 A ICP Collector Current (Pulse) -6 A IB Base Current PC Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) 1.5 W TJ Junction Temperature 150 C TSTG Storage Temperature - 65 ~ 150 C -1 A 12.5 W Electrical Characteristics TC=25C unless otherwise noted Symbol BVCEO ICBO Parameter Collector-Emitter Breaksown Voltage : KSE170 : KSE171 : KSE172 Collector Cut-off Current : KSE170 : KSE171 : KSE172 : KSE170 : KSE171 : KSE172 Test Condition IC = 10mA, IB = 0 Min. Max. -40 -60 -80 VCB = - 60V, IB = 0 VCB = - 80V, IE = 0 VCB = - 100V, IE = 0 VCB = - 60V, IE = 0, TC = 150C VCB = - 80V, IE = 0, TC = 150C VCB = - 100V, IE = 0, TC = 150C Units V V V -0.1 -0.1 -0.1 -0.1 -0.1 -0.1 A A A mA mA mA -0.1 A IEBO Emitter Cut-off Current VBE = - 7V, IC = 0 hFE DC Current Gain VCE = - 1V, IC = - 100mA VCE = - 1V, IC = - 500mA VCE = - 1V, IC = - 1.5A VCE(sat) Collector-Emitter Saturation Voltage IC = - 500mA, IB = - 50mA IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA -0.3 -0.9 -1.7 V V V VBE(sat) Base-Emitter Saturation Voltage IC = - 1.5A, IB = - 150mA IC = - 3A, IB = - 600mA -1.5 -2.0 V V VBE(on) Base-Emitter On Voltage VCE = - 1V, IC = - 500mA fT Current Gain Bandwidth Product VCE = - 10V, IC = - 100mA Cob Output Capacitance VCB = - 10V, IE = 0, f = 0.1MHz (c)2001 Fairchild Semiconductor Corporation 50 30 12 250 -1.2 50 V MHz 50 pF Rev. A1, January 2001 KSE170/171/172 Typical Charactristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 1000 hFE, DC CURRENT GAIN VCE = -1V 100 10 -0.1 -1 -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 VBE(sat) IC/IB=10 -0.8 V BE@VCE= -1V -0.6 -0.4 IC/IB=5 IC/IB=10 -0.2 V CE(sat) -0.0 -0.01 IC[A], COLLECTOR CURRENT -0.1 -1 -10 -100 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 1000 1000 tD,tR[ns], TURN ON TIME Cob[pF], CAPACITANCE f=0.1MHZ IE =0 100 10 1 -0.1 -1 -10 tR 100 tD 10 1 -0.01 -100 VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Collector Output Capacitance -1 -10 Figure 4. Turn On Time -10 s s 100 0 tF 50 tSTG 0 10 IC[A], COLLECTOR CURRENT 1000 tF,tSTG[ns], TURN OFF TIME -0.1 IC[A], COLLECTOR CURRENT -1 DC 50m s -0.1 KSE170 KSE171 KSE172 VCEMAX. -0.01 10 -0.1 -1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time (c)2001 Fairchild Semiconductor Corporation -1 -10 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Safe Operating Area Rev. A1, January 2001 KSE170/171/172 Typical Characteristics (Continued) 16 PC[W], POWER DISSIPATION 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175 o Tc[ C], CASE TEMPERATURE Figure 7. DC current Gain (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 KSE170/171/172 Package Demensions 8.00 0.30 11.00 o3.20 0.10 0.20 3.25 0.20 14.20MAX 3.90 0.10 TO-126 (1.00) (0.50) 0.75 0.10 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 16.10 0.30 13.06 0.75 0.10 0.20 1.75 0.20 1.60 0.10 +0.10 0.50 -0.05 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, January 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. (c)2001 Fairchild Semiconductor Corporation Rev. H2