Panasonic Corporation Automation Controls Business Unit industrial.panasonic.com/ac/e
GU-E 1 Form B (AQV414E, AQV41❍EH)
ASCTB127E 201201-T
TYPES
*Indicate the peak AC and DC values.
Note: The surface mount terminal shape indicator “A” and the packing style indicator “X” or “Z” are not marked on the device.
RATING
Normally closed DIP6-pin
economic type with
reinforced insulation GU-E 1 Form B
(AQV414E, AQV41❍EH)
I/O isolation
voltage
Output rating*
Package
Part No.
Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage
Load
current Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC
dual use
1,500 V AC
(Standard) 400 V 120 mA
DIP6-pin
AQV414E AQV414EA AQV414EAX AQV414EAZ 1 tube contains:
50 pcs.
1 batch contains:
500 pcs.
1,000 pcs.
5,000 V AC
(Reinforced)
60 V 550 mA AQV412EH AQV412EHA AQV412EHAX AQV412EHAZ
350 V 130 mA AQV410EH AQV410EHA AQV410EHAX AQV410EHAZ
400 V 120 mA AQV414EH AQV414EHA AQV414EHAX AQV414EHAZ
TESTING
(Reinforced type)(Standard type)
(AQV410EH, 414EH) (AQV410EH, 414EH)
VDE
(AQV412EH)
VDE
mm inch
FEATURES
1. High cost-performance type of
PhotoMOS 1 Form B output
2. 60V type couples high capacity
(0.55A) with low on-resistance (typ. 1Ω).
3. Low on-resistance
This has been realized thanks to the
built-in MOSFET processed by our
proprietary method, DSD (Double-
diffused and Selective Doping) method.
4. Controls low-level analog signals
PhotoMOS feature extremely low closed-
circuit offset voltage to enable control of
low-level analog signals without
distortion.
5. High sensitivity and low on-
resistance
Can control max. 0.55 A load current with
5 mA input current.
Low on-resistance of typ. 1Ω
(AQV412EH).
6. Low-level off-state leakage current
of max. 1 µA (AQV414E)
7. Reinforced insulation 5,000 V type
also available
More than 0.4 mm internal insulation
distance between inputs and outputs.
Conforms to EN41003, EN60950
(reinforced insulation).
TYPICAL APPLICATIONS
• Power supply
• Measuring equipment
• Security equipment
• Telephone equipment
• Sensing equipment
8.8 6.4
3.6
8.8 6.4
3.9
.346 .252
.142
.346 .252
.154
1
2
3
6
5
4
RoHS compliant
Source electrode
N–
N+
N+N+
P+N+N+
P+
Gate electrode
Passivation membrane
Cross section of the normally-closed type of
power MOS
Intermediate
insulating
membrane
Gate
oxidation
membrane
Drain
electrode
1. Absolute maximum ratings (Ambient temperature: 25°C 77°F)
Item Symbol Type of
connection AQV414E(A) AQV412EH(A) AQV410EH(A) AQV414EH(A) Remarks
Input
LED forward current IF50 mA
LED reverse voltage VR5 V
Peak forwrd current IFP 1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation Pin 75 mW
Output
Load voltage (peak AC) VL400 V 60 V 350 V 400 V
Continuous load
current IL
A 0.12 A 0.55 A 0.13 A 0.12 A A connection: Peak AC, DC
B,C connection: DC
B 0.13 A 0.65 A 0.15 A 0.13 A
C 0.15 A 0.8 A 0.17 A 0.15 A
Peak load current Ipeak 0.3 A 1.5 A 0.4 A 0.3 A A connection: 100 ms (1 shot), VL = DC
Power dissipation Pout 500 mW
Total power dissipation PT550 mW
I/O isolation voltage Viso 1,500 V AC 5,000 V AC
Temperature
limits
Operating Topr –40°C to +85°C –40°F to +185°FNon-condensing at low temperatures
Storage Tstg –40°C to +100°C –40°F to +212°F