FGH40N60UFTU - Fairchild Semiconductor

FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

July 2008

Absolute Maximum Ratings

Notes:

1: Repetitive rating: Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol Description Ratings Units

VCES Collector to Emitter Voltage 600 V

VGES Gate to Emitter Voltage ± 20 V

ICCollector Current @ TC = 25oC80 A

Collector Current @ TC = 100oC40 A

ICM (1) Pulsed Collector Current @ TC = 25oC 120 A

PDMaximum Power Dissipation @ TC = 25oC290 W

Maximum Power Dissipation @ TC = 100oC116 W

TJ Operating Junction Temperature -55 to +150 oC

Tstg Storage Temper ature Range -55 to +150 oC

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 oC

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction to Case - 0.43 oC/W

RθJA Thermal Resistance, Junction to Ambient - 40 oC/W

ECG

COLLECTOR

(FLANGE)

FGH40N60UF

600V, 40A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) =1.8V @ IC = 40A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new ses-

ries of Field Stop IGBTs offer the optimum performance for

Induction Heating, UPS, SMPS and PFC applications where low

conduction and switching losses are essential.

2www.fairchildsemi.com

FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

Package Marking and Ordering Information

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted

Device Marking Device Package Packaging

Type Qty per Tube

Max Qty

per Box

FGH40N60UF FGH40N60UFTU TO-247 Tube 30ea -

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA 600 - - V

∆BVCES

∆TJ

Temperature Coefficient of Breakdown

Voltage VGE = 0V, IC = 250µA-0.6-V/

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 µA

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 250µA, VCE = VGE 4.0 5.0 6.5 V

VCE(sat) Collector to Emitter Saturation Voltage IC = 40A, VGE = 15V -1.82.4V

IC = 40A, VGE = 15V,

TC = 125oC-2.0- V

Dynamic Characteristics

Cies Input Capacitance VCE = 30V, VGE = 0V,

f = 1MHz

-2110- pF

Coes Output Capacitance - 200 - pF

Cres Reverse Transfer Capacitance - 60 - pF

Switching Characteristics

td(on) Turn-On Delay Time

VCC = 400V, IC = 40A,

RG = 10Ω, V GE = 15V,

Inductive Load, TC = 25oC

-24-ns

trRise Time - 44 - ns

td(off) Turn-Off Delay Time - 112 - ns

tfFall Time - 30 60 ns

Eon Turn-On Switching Loss - 1.19 - mJ

Eoff Turn-Off Switching Loss - 0.46 - mJ

Ets Total Switching Loss - 1.65 - mJ

td(on) Turn-On Delay Time

VCC = 400V, IC = 40A,

RG = 10Ω, V GE = 15V,

Inductive Load, TC = 125oC

-24-ns

trRise Time - 45 - ns

td(off) Turn-Off Delay Time - 120 - ns

tfFall Time - 40 - ns

Eon Turn-On Switching Loss - 1.2 - mJ

Eoff Turn-Off Switching Loss - 0.69 - mJ

Ets Total Switching Loss - 1.89 - mJ

QgTo tal Gate Charge VCE = 400V, IC = 40A,

VGE = 15V

- 120 - nC

Qge Gate to Emitter Charge - 14 - nC

Qgc Gate to Collector Charge - 58 - nC

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FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE

Temperature at Variant Current Level

0.0 1.5 3.0 4.5 6.0

100

120

20V

TC = 25oC

15V 12V

10V

VGE = 8V

Collector Current , IC [A]

Collector-Emitter Voltage, VCE [V] 0.0 1.5 3.0 4.5 6.0

100

120

20V

TC = 125oC

15V

12V

10V

VGE = 8V

Collector Current , IC [A]

Collector-Emitter Voltage, VCE [V]

01234

100

120

Comm on E m itter

VGE = 15V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Collector-Emitter Voltage, VCE [V] 56789101112

100

120 Common Emitter

VCE = 20V

TC = 25oC

TC = 125oC

Collector Current, IC [A]

Gate-Emitter Voltage,VGE [V]

25 50 75 100 125

1.0

1.5

2.0

2.5

3.0

3.5

80A

40A

IC = 20A

Comm on E m itter

VGE = 15V

Collector-Emitter Voltage, VCE [V]

Collector-EmitterCase Temperature, TC [oC]4 8 12 16 20

IC = 20A

40A 80A

Comm on Em itter

TC = - 40oC

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

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FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 7. Saturatio n Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs.

Gate Resistance

4 8 12 16 20

IC = 20A

40A 80A

Comm on E m itter

TC = 25oC

Collector-Emitter Voltage, VCE [V]

Gate -E m itte r V o ltage , V GE [V] 4 8 12 16 20

IC = 20A

40A 80A

Comm on E m itter

TC = 125oC

Collector-Emitter Vo ltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

0.1 1 10

1000

2000

3000

4000

5000 Common E m itter

VGE = 0V , f = 1MHz

TC = 25oC

Crss

Coss

Ciss

Capacitance [pF]

Collector-Emitter Voltage, VCE [V] 30 0 50 100 150

15 Comm on Em itter

TC = 25oC

300V 200V

Vcc = 100V

Gate-Emitter Voltage, VGE [V]

Ga te Cha r g e , Qg [nC ]

1 10 100 1000

0.01

0.1

100

1ms

10 ms

Single Nonrepetitive

Pulse TC = 25oC

Curves must be derated

linearly with increase

in temperature

10µs

100µs

Collector Current, Ic [A]

Collector-Emitter Voltage, VCE [V]

400

0 1020304050

100

C omm on Emitt e r

VCC = 40 0V , VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC

td(on)

Switching Time [ns]

Gate Resistance, RG [Ω]

200

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FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.

Gate Resistance Collector Current

Figure 15. Turn-off Characteristics vs. Figure 16. Switching Loss vs. Gate Resistance

Collector Current

Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching

SOA Characteristics

0 1020304050

100

1000

C omm on Emitt e r

VCC = 400 V , VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC td(off)

Switching Time [ns]

Gate Resistance, RG [Ω]

5500

20 40 60 80

100

Common E mitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC tr

td(on)

Switching Time [ns]

Collector Current, IC [A]

500

20 40 60 80

100

600 Co mm o n Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC td(off)

Switching Time [ns]

Collector Current, IC [A]

0 1020304050

0.3

Common Emitter

VCC = 400V, VGE = 15V

IC = 40A

TC = 25oC

TC = 125oC Eon

Eoff

Switching Loss [mJ]

Gate Resistance, RG [Ω]

1 10 100 1000

100

Safe O p era ting Area

VGE = 15V, TC = 125 oC

Collector Curren t , IC [A]

Collector-Emitter Voltage, VCE [V]

200

20 40 60 80

0.1

10 Common Emitter

VGE = 15V, RG = 10Ω

TC = 25oC

TC = 125oC

Eon

Eoff

Switching Loss [mJ]

Collector C urrent, IC [A]

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FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

Typical Performance Characteristics

Figure 19.Transient Thermal Impedance of IGBT

1E-5 1E-4 1E-3 0.01 0.1 1

1E-3

0.01

0.1

0.2

0.5

0.1

0.05

0.01

0.02

single pulse

Thermal Response [Zthjc]

Rectangular Pulse Duration [sec]

Duty Factor, D = t1/t2

Peak Tj = Pdm x Zthjc + TC

PDM

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FGH40N60UF Rev. B

FGH40N60UF 600V, 40A Field Stop IGBT

Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

Rev. I35

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