MBRF40020 thru MBRF40040R Silicon Power Schottky Diode VRRM = 20 V - 40 V IF(AV) = 400 A Features * High Surge Capability * Types from 20 V to 40 V VR TO-244AB Package * Not ESD Sensitive Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature Symbol Conditions MBRF40020(R) MBRF40030(R) MBRF40035(R) MBRF40040(R) Unit VRRM 20 30 35 40 V VRMS 14 21 25 28 V VDC Tj Tstg 20 -55 to 150 -55 to 150 30 -55 to 150 -55 to 150 35 -55 to 150 -55 to 150 40 -55 to 150 -55 to 150 V C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions IF(AV) TC = 125 C 400 400 400 400 A IFSM tp = 8.3 ms, half sine 3000 3000 3000 3000 A Maximum forward voltage (per leg) VF IFM = 200 A, Tj = 25 C 0.70 0.70 0.70 0.70 V Reverse current at rated DC blocking voltage (per leg) IR Tj = 25 C Tj = 100 C Tj = 150 C 1 10 50 1 10 50 1 10 50 1 10 50 mA 0.35 0.35 0.35 0.35 C/W Parameter Average forward current (per pkg) Peak forward surge current (per leg) MBRF40020(R) MBRF40030(R) MBRF40035(R) MBRF40040(R) Unit Thermal characteristics Thermal resistance, junctioncase (per leg) RJC www.genesicsemi.com/silicon-products/schottky-rectifiers/ 1 MBRF40020 thru MBRF40040R www.genesicsemi.com/silicon-products/schottky-rectifiers/ 2 MBRF40020 thru MBRF40040R Package dimensions and terminal configuration Product is marked with part number and terminal configuration. www.genesicsemi.com/silicon-products/schottky-rectifiers/ 3