V
RRM
= 20 V - 40 V
I
F(AV)
= 400 A
Features
• High Surge Capability TO-244AB Package
• Types from 20 V to 40 V V
R
• Not ESD Sensitive
Parameter Symbol MBRF40020(R) MBRF40030(R) Unit
Repetitive peak reverse
voltage V
RRM
20 30 V
RMS reverse voltage V
RMS
14 21 V
MBRF40020 thru MBRF40040R
MBRF40040(R)
35
25
MBRF40035(R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Power
Schottk
y
Diode
Conditions
40
28
DC blocking voltage V
DC
20 30 V
Operating temperature T
j
-55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 °C
Parameter Symbol MBRF40020(R) MBRF40030(R) Unit
Average forward current
(per pkg) I
F(AV)
400 400 A
Maximum forward voltage
(per leg) 0.70 0.70
11
10 10
50 50
Thermal characteristics
Thermal resistance, junction-
case (per leg) R
ΘJC
0.35 0.35 °C/W
A
T
j
= 100 °C 10 10
400
Peak forward surge current
(per leg) I
FSM
t
p
= 8.3 ms, half sine 3000 3000 3000 3000
50
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Reverse current at rated DC
blocking voltage (per leg) I
R
V
F
-55 to 150
MBRF40040(R)
11
T
j
= 25 °C
I
FM
= 200 A, T
j
= 25 °C
Conditions
-55 to 150
-55 to 150
0.35
0.70 0.70
50
MBRF40035(R)
0.35
T
j
= 150 °C
T
C
= 125 °C 400
mA
V
-55 to 150
4035
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBRF40020 thru MBRF40040R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
MBRF40020 thru MBRF40040R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
