Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Switching Diode
FMN1
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Ultra high speed switching
Features
1) Small mold type. (SMD5)
2) High reliability.
Construction
Silicon epitaxial planar Structure
Taping specifications (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
VRM V
VRV
IFM mA
Io mA
Isurge mA
Pd mW
Tj °C
Tstg °C
Electrical characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF- - 0.9 V IF=5mA
Reverse current IR- - 0.1 μAVR=70V
Ct - - 3.5 pF VR=6V , f=1MHz
trr - - 4 ns VR=6V , IF=5mA , RL=50
Parameter
Capacitance between terminals
Reverse recovery time
Storage temperature 55 to 150
Power dissipation 80
Junction temperature 150
Average rectified forward current (Single) 25
Surge current (t=1us) 250
Reverse voltage (DC) 80
Forward current (Single) 80
Parameter Limits
Reverse voltage (repetitive) 80
SMD5
0.8MIN.
1.0MIN.
0.45 0.35
1.9
0.95 0.95
0.45
0.35
0.6
2.4
3.2±0.1 4.0±0.1
4.0±0.1 2.0±0.05 φ1.5±0.1
0
3.5±0.05 1.75±0.1
8.0±0.2
φ1.0MIN
3.2±0.1
1.35±0.1
3.2±0.1
0.3±0.1
5.5±0.2
0～0.5
ROHM : SMD5
JEITA : SC-74A
week code
2.9±0.2
2.8±0.2
1.9±0.2
1.6 ＋0.2
－0.1
0.95 0.95
各リードとも同寸法
0～0.1
(5) (3)
(1)
(4)
(2)
0.3～0.6
0.15±0.1
0.06
1.1±0.2
0.1
0.8±0.1
0.3
＋0.1
－0.05
Each lead has same dimension
1/2 2011.06 - Rev.C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
FMN11
0
1
2
3
4
5
6
7
8
9
10
1
10
100
0.1 1 10 100
t
Ifsm
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=1mA IF=10mA
300us
time
Mounted on epoxy board
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(nA)
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
VF DISPERSION MAP
FORWARD VOLTAGE:VF(mV)
REVERSE CURRENT:IR(nA)
IR DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
IFSM DISPERSION MAP
PEAK SURGE
FORWARD CURRENT:IFSM(A)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:IFSM(A)
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
0.1
1
10
100
0 100 200 300 400 500 600 700 800 900 1000
Ta=-25℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=150℃
0.01
0.1
1
10
100
1000
10000
100000
0 1020304050607080
Ta=125℃
Ta=-25℃
Ta=25℃
Ta=75℃
Ta=150℃
0.1
1
10
0 5 10 15 20
f=1MHz
660
670
680
690
700
710
AVE:682.7mV
Ta=25℃
IF=5mA
n=30pcs
0
10
20
30
40
50
60
70
80
90
100
Ta=25℃
VR=70V
n=10pcs
AVE:7.689nA
0
1
2
3
4
5
6
7
8
9
10
AVE:1.039pF
Ta=25℃
VR=6V
f=1MHz
n=10pcs
0
5
10
15
20
AVE:2.50A
8.3ms
Ifsm 1cyc
AVE:1.26ns
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
0
1
2
3
4
5
110100
8.3ms
Ifsm
1cyc
8.3ms
0
1
2
3
4
5
6
7
8
9
10
AVE:0.57kV
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
AVE:2.06kV
2/2 2011.06 - Rev.C
R1120A
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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