S S D D G G 27 2 T- SO APT8030JN APT8035JN S ISOTOP(R) 27.0A 0.30 25.0A 0.35 800V 800V "UL Recognized" File No. E145592 (S) POWER MOS IV (R) SINGLE DIE ISOTOP(R) PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APT 8030JN APT 8035JN UNIT 800 800 Volts 27 25 108 100 Continuous Drain Current @ TC = 25C 1 Amps IDM, lLM Pulsed Drain Current VGS Gate-Source Voltage 30 Volts Total Power Dissipation @ TC = 25C 520 Watts Linear Derating Factor 4.16 W/C PD TJ,TSTG TL and Inductive Current Clamped -55 to 150 Operating and Storage Junction Temperature Range C 300 Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(ON) RDS(ON) IDSS IGSS VGS(TH) Characteristic / Test Conditions / Part Number Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 A) On State Drain Current APT8030JN 800 APT8035JN 800 APT8030JN 27 APT8035JN 25 TYP MAX UNIT Volts 2 (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance MIN 2 Amps APT8030JN 0.30 APT8035JN 0.35 Ohms (VGS = 10V, 0.5 ID [Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 A Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts MAX UNIT Gate Threshold Voltage (VDS = VGS, I D = 2.5mA) 2 THERMAL CHARACTERISTICS Characteristic MIN RJC Junction to Case RCS Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.) TYP 0.24 0.06 C/W CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord 050-8037 Rev F Symbol DYNAMIC CHARACTERISTICS Symbol APT8030/8035JN Characteristic Test Conditions MIN TYP MAX Ciss Input Capacitance VGS = 0V 5780 6800 Coss Output Capacitance VDS = 25V 725 1015 Crss Reverse Transfer Capacitance f = 1 MHz 240 360 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) VGS = 10V 245 370 VDD = 0.5 VDSS 28 40 ID = ID [Cont.] @ 25C 113 170 VGS = 15V 14 28 3 Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf VDD = 0.5 VDSS 14 28 ID = ID [Cont.] @ 25C 48 72 RG = 0.6 12 24 TYP MAX Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions Continuous Source Current (Body Diode) IS MIN APT8030JN 27 APT8035JN 25 APT8030JN 108 APT8035JN 100 ISM Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID [Cont.], dl S/dt = 100A/s) Q rr Reverse Recovery Charge (IS = -ID [Cont.], dl S/dt = 100A/s) (VGS = 0V, IS = -ID [Cont.]) 1.8 UNIT Amps Volts 1010 1200 ns 23 46 C TYP MAX UNIT PACKAGE CHARACTERISTICS Symbol Characteristic / Test Conditions MIN LD Internal Drain Inductance (Measured From Drain Terminal to Center of Die.) 3 LS Internal Source Inductance (Measured From Source Terminals to Source Bond Pads) 5 VIsolation RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.) CIsolation Drain-to-Mounting Base Capacitance (f = 1MHz) Torque Maximum Torque for Device Mounting Screws and Electrical Terminations. nH 2500 Volts 35 pF 13 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1) 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 Note: PDM Z JC, THERMAL IMPEDANCE (C/W) 050-8037 Rev F 0.3 0.02 0.01 t2 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION in-lbs APT8030/8035JN 50 VGS=6, 8, 10 & 15V 5.5V 40 30 5V 20 4.5V 10 4V ID, DRAIN CURRENT (AMPERES) 0 30 20 TJ = -55C TJ = +125C 10 TJ = +25C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 30 25 APT8030JN 20 APT8035JN 15 10 5 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 25 5V 20 4.5V 10 4V RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE TJ = +125C 40 30 2.5 BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) TJ = +25C 5.5V 0 4 8 12 16 20 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.2 TJ = 25C 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE NORMALIZED TO V = 10V @ 0.5 I [Cont.] 2.0 GS D VGS=10V 1.5 VGS=20V 1.0 0.5 0 20 40 60 80 100 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.4 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) TJ = -55C 6V VGS=8 & 10V 40 0 0 80 160 240 320 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 50 VGS=15V 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-8037 Rev F ID, DRAIN CURRENT (AMPERES) 50 APT8030/8035JN 20,000 APT8030JN 100 10S APT8035JN 100S APT8030JN APT8035JN 1mS 10 5 10mS 100mS 1 TC =+25C TJ =+150C SINGLE PULSE .5 DC .1 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1 5 10 50 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 I = I [Cont.] D D VDS=80V 16 VDS=160V VDS=400V 12 8 4 0 0 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE C, CAPACITANCE (pF) 10,000 OPERATION HERE LIMITED BY RDS (ON) 50 Ciss 5,000 Coss 1,000 Crss 500 100 .1 .5 1 5 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE IDR, REVERSE DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) 200 200 160 120 80 TJ =+150C TJ =+25C TJ =-55C 40 0 0 0.4 0.8 1.2 1.6 2.0 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE APT Reserves the right to change, without notice, the specifications and information contained herein. SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) Hex Nut M4 (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 1.95 (.077) 2.14 (.084) * Source * Source terminals are shorted internally. Current handling capability is equal for either Source terminal. 38.0 (1.496) 38.2 (1.504) 050-8037 Rev F * Source Dimensions in Millimeters and (Inches) ISOTOP(R) is a Registered Trademark of SGS Thomson. Drain Gate