APT8030JN - Advanced Power Technology

Symbol

VDSS

IDM, lLM

VGS

TJ,TSTG

Parameter

Drain-Source Voltage

Continuous Drain Current @ TC = 25°C

Pulsed Drain Current 1 and Inductive Current Clamped

Gate-Source Voltage

Total Power Dissipation @ TC = 25°C

Linear Derating Factor

Operating and Storage Junction Temperature Range

Lead Temperature: 0.063" from Case for 10 Sec.

STATIC ELECTRICAL CHARACTERISTICS

Characteristic / Test Conditions / Part Number

Drain-Source Breakdown Voltage

(VGS = 0V, ID = 250 µA)

On State Drain Current 2

(VDS > ID(ON) x RDS(ON) Max, VGS = 10V)

Drain-Source On-State Resistance 2

(VGS = 10V, 0.5 ID [Cont.])

Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)

Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

THERMAL CHARACTERISTICS

Symbol

RΘJC

RΘCS

Characteristic

Junction to Case

Case to Sink (Use High Efficiency Thermal Joint Compound and Planer Heat Sink Surface.)

MIN TYP MAX

0.24

0.06

UNIT

°C/W

Symbol

BVDSS

ID(ON)

RDS(ON)

IDSS

IGSS

VGS(TH)

MIN TYP MAX

APT8030JN 800

APT8035JN 800

APT8030JN 27

APT8035JN 25

APT8030JN 0.30

APT8035JN 0.35

250

1000

±100

UNIT

Volts

Amps

Ohms

µA

Volts

UNIT

Volts

Amps

Volts

Watts

W/°C

°C

APT APT

8030JN 8035JN

800 800

27 25

108 100

±30

520

4.16

-55 to 150

300

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

SOT-227

"UL Recognized" File No. E145592 (S)

APT8030JN 800V 27.0A 0.30Ω

APT8035JN 800V 25.0A 0.35Ω

SINGLE DIE ISOTOP® PACKAGE

ISOTOP®

N-CHANNEL ENHANCEMENT MODE H I GH VOLTAGE POWER MOSF ETS

POWER MOS IV

050-8037 Rev F

USA

405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364

EUROPE

Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 5792 15 15 FAX: (33) 5 56 47 97 61

MIN TYP MAX

APT8030JN 27

APT8035JN 25

APT8030JN 108

APT8035JN 100

1.8

1010 1200

23 46

DYNAMIC CHARACTERISTICS

Symbol

Ciss

Coss

Crss

Qgs

Qgd

td(on)

td(off)

Test Conditions

VGS = 0V

VDS = 25V

f = 1 MHz

VGS = 10V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

VGS = 15V

VDD = 0.5 VDSS

ID = ID [Cont.] @ 25°C

RG = 0.6Ω

MIN TYP MAX

5780 6800

725 1015

240 360

245 370

28 40

113 170

14 28

48 72

12 24

UNIT

APT8030/8035JN

Characteristic

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge 3

Gate-Source Charge

Gate-Drain ("Miller") Charge

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Characteristic / Test Conditions

Continuous Source Current

(Body Diode)

Pulsed Source Current 1

(Body Diode)

Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.])

Reverse Recovery Time (IS = -ID [Cont.], dlS/dt = 100A/µs)

Reverse Recovery Charge (IS = -ID [Cont.], dlS/dt = 100A/µs)

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

ISM

VSD

t rr

Q rr

UNIT

Amps

Volts

µC

Characteristic / Test Conditions

Internal Drain Inductance (Measured From Drain Terminal to Center of Die.)

Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)

RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)

Drain-to-Mounting Base Capacitance (f = 1MHz)

Maximum Torque for Device Mounting Screws and Electrical Terminations.

UNIT

Volts

in-lbs

PACKAGE CHARACTERISTICS

Symbol

VIsolation

CIsolation

Torque

MIN TYP MAX

2500 35 13

1Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3See MIL-STD-750 Method 3471

050-8037 Rev F

10-5 10-4 10-3 10-2 10-1 1.0 10

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

0.3

0.1

0.05

0.01

0.005

0.001

ZθJC, THERMAL IMPEDANCE (°C/W)

Note:

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

PDM

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D=0.5

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT

TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)

(NORMALIZED)

VGS(TH), THRESHOLD VOLTAGE BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)

(NORMALIZED) VOLTAGE (NORMALIZED)

0 80 160 240 320 400 0 4 8 12 16 20

0 2 4 6 8 10 0 20 40 60 80 100

25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150

ID = 0.5 ID [Cont.]

VGS = 10V

2.5

2.0

1.5

1.0

0.5

0.0

2.5

2.0

1.5

1.0

0.5

1.2

1.1

1.0

0.9

0.8

0.7

1.4

1.2

1.0

0.8

0.6

0.4

TJ = 25°C

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

NORMALIZED TO

VGS = 10V @ 0.5 ID [Cont.]

APT8030JN

APT8030/8035JN

VGS=6, 8, 10 & 15V

5.5V

4.5V

5.5V

4.5V

VGS=15V

VGS=8 & 10V

TJ = -55°C

TJ = +125°C

TJ = +25°CVDS> ID (ON) x RDS (ON)MAX.

250µSEC. PULSE TEST

@ <0.5 % DUTY CYCLE

TJ = -55°CTJ = +25°C

TJ = +125°C

APT8035JN

VGS=20V

VGS=10V

050-8037 Rev F

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE

Qg, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)

IDR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)

1 5 10 50 100 800 .1 .5 1 5 10 50

0 100 200 300 400 500 0 0.4 0.8 1.2 1.6 2.0

APT8030/8035JN

TC =+25°C

TJ =+150°C

SINGLE PULSE

200

100

20,000

10,000

5,000

1,000

500

100

200

160

120

ID = ID [Cont.]

TJ =+25°C

TJ =+150°C

TJ =-55°C

OPERATION HERE

LIMITED BY RDS (ON)

APT8030JN

APT8035JN

APT8030JN

APT8035JN

10µS

100µS

1mS

10mS

100mS

Ciss

Crss

Coss

VDS=80V

VDS=160V VDS=400V

31.5 (1.240)

31.7 (1.248)

Dimensions in Millimeters and (Inches)

7.8 (.307)

8.2 (.322)

30.1 (1.185)

30.3 (1.193)

38.0 (1.496)

38.2 (1.504)

14.9 (.587)

15.1 (.594)

11.8 (.463)

12.2 (.480)

8.9 (.350)

9.6 (.378)

Hex Nut M4

(4 places)

0.75 (.030)

0.85 (.033) 12.6 (.496)

12.8 (.504)

25.2 (0.992)

25.4 (1.000)

1.95 (.077)

2.14 (.084)

* Source Drain

Gate

r = 4.0 (.157)

(2 places) 4.0 (.157)

4.2 (.165)

(2 places)

W=4.1 (.161)

W=4.3 (.169)

H=4.8 (.187)

H=4.9 (.193)

(4 places)

3.3 (.129)

3.6 (.143)

* Source

Source terminals are shorted

internally. Current handling

capability is equal for either

Source terminal.

SOT-227 (ISOTOP®) Package Outline

ISOTOP® is a Registered Trademark of SGS Thomson.

APT Reserves the right to change, without notice, the specifications and information contained herein.

050-8037 Rev F