CoolSET®-F3
ICE3A1065ELJ
Off-Line SMPS Current Mode
Controller with integrated 650V
CoolMOS® and Startup Cell
(Latched and frequency jitter
Mode)
Never stop thinking.
Power Management & Supply
Version 2.3, 19 Nov 2012
Edition 2012-11-19
Published by
Infineon Technologies AG,
81726 Munich, Germany,
© 2008 Infineon Technologies AG.
All Rights Reserved.
Legal disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact your nearest Infineon Technologies Office.
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CoolMOS®, CoolSET® are trademarks of Infineon Technologies AG.
CoolSET®-F3
ICE3A1065ELJ
Revision History: 2012-11-19 Datasheet
Previous Version: V2.2
Page Subjects (major changes since last revision)
25 revised outline dimension for PG-DIP-8 package
Type Package Marking VDS FOSC RDSon
1)
1) typ @ T=25°C
230VAC ±15%2)
2) Calculated maximum input power rating at Ta=75°C, Tj=125°C and without copper area as heat sink.
85-265 VAC2)
ICE3A1065ELJ PG-DIP-8 3A1065ELJ 650V 100kHz 2.95 32W 16W
Version 2.3 3 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Off-Line SMPS Current Mode Controller with
integrated 650V CoolMOS® and Startup Cell
(Latched and frequency jitter Mode)
test
PG-DIP-8
Description
The CoolSET®F3 ELJ version is the enhanced LJ version
for system noise. It retains all the features of LJ series
such as BiCMOS technologies, active burst mode,
frequency jitter, propagation delay compensation, built-in
soft start, auto-restart protection for over load and open
loop, latch off protection for over voltage, over
temperature and short winding, external latch off enable,
built-in and extendable blanking time for short period of
over power, etc. It is target for low power SMPS
application such as Off-Line Battery Adapters, DVD player
and recorder, set-top box, auxiliary power supply, etc. The
ELJ version has implemented some noise resist
techniques to the IC such that it is more robust to the
system noise which is generated during system ESD test,
lightning surge test, transient test, etc.
Product Highlights
Active Burst Mode to reach the lowest Standby Power Requirements
< 100mW
Built-in latched off mode and external latch enable function to
increase robustness of the system
Built-in and extendable blanking window for high load jumps to
increase system reliability
Built-in soft start
Frequency jitter for low EMI
Robustness to system noise
Pb-free lead plating; RoHS compliant
Features
650V avalanche rugged CoolMOS® with built-in
Startup Cell
Active Burst Mode for lowest Standby Power
Fast load jump response in Active Burst Mode
100kHz internally fixed switching frequency
Built-in latched Off Mode for Overtemperature,
Overvoltage & Short Winding Detection
Auto Restart Mode for Overload, Open Loop &
VCC Undervoltage
Built-in Soft Start
Built-in and extendable blanking Window for short
duration high current
External latch enable function
Max Duty Cycle 75%
Overall tolerance of Current Limiting < ±5%
Internal PWM Leading Edge Blanking
BiCMOS technology provide wide VCC range
Frequency jitter and soft driving for low EMI
Robustness to system noise such as ESD,
lightning surge, etc.
CVCC
CBulk
Converter
DC Output
+
Snubber
Power Management
PWM Controller
Current Mode
85 ... 270 VAC
Typical Application
RSense
BL
FB
GND
Active Burst Mode
Latched Off Mode
Auto Restart Mode
Control
Unit
-
CS
VCC
Startup Cell
Precise Low Tolerance Peak
Current Limitation
Drain
CoolSET®-F3
( Latch & Jitter )
Depl. CoolMOS™
CoolSET®-F3
ICE3A1065ELJ
Table of Contents Page
Version 2.3 4 19 Nov 2012
1Pin Configuration and Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
1.1 Pin Configuration with PG-DIP-8 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
1.2 Pin Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2Representative Blockdiagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3Functional Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.2 Power Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.3 Improved Current Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
3.3.1 PWM-OP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.3.2 PWM-Comparator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
3.4 Startup Phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
3.5 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.5.1 Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
3.5.2 PWM-Latch FF1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.5.3 Gate Driver . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.6 Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3.6.1 Leading Edge Blanking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3.6.2 Propagation Delay Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
3.7 Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.1 Basic and Extendable Blanking Mode . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.2 Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.2.1 Entering Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3.7.2.2 Working in Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.2.3 Leaving Active Burst Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3.7.3 Protection Modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3.7.3.1 Latched Off Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3.7.3.2 Auto Restart Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
4Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19
4.2 Operating Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.3.1 Supply Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
4.3.2 Internal Voltage Reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.3.3 PWM Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.3.4 Soft Start time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21
4.3.5 Control Unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .22
4.3.6 Current Limiting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
4.3.7 CoolMOS® Section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .23
5Temperature derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
CoolSET®-F3
ICE3A1065ELJ
Version 2.3 5 19 Nov 2012
6Outline Dimension . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
7Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .26
8Schematic for recommended PCB layout . . . . . . . . . . . . . . . . . . . . . . . .27
Version 2.3 6 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Pin Configuration and Functionality
1 Pin Configuration and Functionality
1.1 Pin Configuration with PG-DIP-8
Pin Symbol Function
1BL Blanking and Latch
2FB Feedback
3CS Current Sense/
650V1)
1) at Tj = 110°C
CoolMOS® Source
4Drain 650V1) CoolMOS® Drain
5Drain 650V1) CoolMOS® Drain
6n.c. Not Connected
7VCC Controller Supply Voltage
8 GND Controller Ground
Package PG-DIP-8
1
6
7
8
4
3
2
5
GNDBL
FB
CS
VCC
n.c.
Drain Drain
Figure 1 Pin Configuration PG-DIP-8(top view)
Note: Pin 4 and 5 are shorted within the DIP 8
package.
1.2 Pin Functionality
BL (Blanking and Latch)
The BL pin combines the functions of extendable
blanking time for entering the Auto Restart Mode and
the external latch enable. The extendable blanking time
function is to extend the built-in 20ms blanking time by
adding an external capacitor at BL to ground. The
external latch enable function is an external access to
latch off the IC. It is triggered by pulling down the BL pin
to less than 0.1V.
FB (Feedback)
The information about the regulation is provided by the
FB Pin to the internal Protection Unit and to the internal
PWM-Comparator to control the duty cycle. The FB-
Signal controls in case of light load the Active Burst
Mode of the controller.
CS (Current Sense)
The Current Sense pin senses the voltage developed
on the series resistor inserted in the source of the
integrated CoolMOS®. If CS reaches the internal
threshold of the Current Limit Comparator, the Driver
output is immediately switched off. Furthermore the
current information is provided for the PWM-
Comparator to realize the Current Mode.
Drain (Drain of integrated CoolMOS®)
Pin Drain is the connection to the Drain of the internal
CoolMOS®.
VCC (Power supply)
The VCC pin is the positive supply of the IC. The
operating range is between 10.5V and 26V.
GND (Ground)
The GND pin is the ground of the controller.
CoolSET®-F3
ICE3A1065ELJ
Representative Blockdiagram
Version 2.3 7 19 Nov 2012
2 Representative Blockdiagram
Internal Bias Voltage
Reference
Oscillator
Duty Cycle
max
C11
x3.2
Current Limiting
PWM OP
Current Mode
Soft Start
C2
C1
24V
0.1V
RFB
Power Management
CBK
CVCC
85 ... 270 VAC CBulk
+
Con
v
DC
O
V
Spike
Blanking
8.0us
PWM
Comparator
C3
4.0V
C4
4.5V
Gate
Driver
0.72
Clock
RSense
10kΩ
D1
C6a
3.0V
C5
1.35V C10
1.66V
R
S
Q
Auto
Restart
Mode
&
G7
&
G5
&
G9
1
G8
&
G1
1
G3
Thermal Shutdown
Tj >140°C
0.9V
S1
1
Power-Down
Reset
Latched Off
Mode Reset
VVCC < 6.23V
Latched Off
Mode
CS
BL GND
VCC
C7
C8
FB
PWM
Section
Control Unit
FF1
C12
&
0.31V
Leading
Edge
Blanking
220ns
25kΩ
2pF
5.0V
G10
Spike
Blanking
190ns
1pF
Propagation-Delay
Compensation
5.0V
Undervoltage Lockout
Vcsth
G2
-
ICE3Axx65ELJ / CoolSET®-F3 ( Latch & Jitter Mode )
Snubber
VCC Drain
CoolMOS®
Startup Cell
C6b
&
G6
3.61V
&
G11
Active Burst
Mode 0.6V
10.5V
18V
Latch
Enable
Signal
TLE
#1
#2
# : optional external components;
#1 : CBK is used to extand the Blanking Time
#2 : TLE is used to enable the external Latch function
Freq. jitter
20ms
Blanking
Time
20ms Blanking
Time
8us Blanking Time
1 ms
counter Soft
Start
Block
Soft-Start
Comparator
Spike
Blanking
8.0us
T2
3.25kΩ
5.0V
T1
T3 0.6V
IBK
Figure 2 Representative Blockdiagram
Version 2.3 8 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Functional Description
3 Functional Description
All values which are used in the functional description
are typical values. For calculating the worst cases the
min/max values which can be found in section 4
Electrical Characteristics have to be considered.
3.1 Introduction
CoolSET®-F3 ELJ series is the enhanced version of the
LJ series. Not only retains all the features of LJ series
but it also implements with special technique to make
the IC more robust to the system noise which is
generated during transient test, system ESD test,
lightning surge test, etc.
In order to obtain the best-in class low standby power,
a new fully integrated Standby Power concept is
implemented into the IC. An intelligent Active Burst
Mode is used for this Standby Mode. After entering this
mode there is still a full control of the power conversion
by the secondary side via the same optocoupler that is
used for the normal PWM control. The response on
load jumps is optimized. The voltage ripple on Vout is
minimized. Vout is on well controlled in this mode.
The usually external connected RC-filter in the
feedback line after the optocoupler is integrated in the
IC to reduce the external part count.
Furthermore a high voltage Startup Cell is integrated
into the IC which is switched off once the Undervoltage
Lockout on-threshold of 18V is exceeded. This Startup
Cell is part of the integrated CoolMOS®. The external
startup resistor is no longer necessary as this Startup
Cell is connected to the Drain. Power losses are
therefore reduced. This increases the efficiency under
light load conditions drastically.
This version is adopting the BiCMOS technology and it
can increase design flexibility as the Vcc voltage range
is increased to 26V.
For this ELJ version, the soft start is a built-in function.
It is set at 20ms. Then it can save external component
counts.
There are 2 modes of blanking time for high load
jumps; the basic mode and the extendable mode. The
blanking time for the basic mode is set at 20ms while
the extendable mode will increase the blanking time
from basic mode by adding external capacitor at the BL
pin. During this time window the overload detection is
disabled.
In order to increase the robustness and safety of the
system, the IC provides 2 levels of protection modes:
Latched Off Mode and Auto Restart Mode. The
Latched Off Mode is only entered under dangerous
conditions which can damage the SMPS if not switched
off immediately. A restart of the system can only be
done by recycling the AC line. In addition, for this ELJ
version, there is an external Latch Enable function
provided to increase the flexibility in protection. When
the BL pin is pulled down to less than 0.1V, the Latch
Off Mode is triggered.
The Auto Restart Mode reduces the average power
conversion to a minimum under unsafe operating
conditions. This is necessary for a prolonged fault
condition which could otherwise lead to a destruction of
the SMPS over time. Once the malfunction is removed,
normal operation is automatically retained after the
next Start Up Phase.
The internal precise peak current limitation reduces the
costs for the transformer and the secondary diode. The
influence of the change in the input voltage on the
power limitation can be avoided together with the
integrated Propagation Delay Compensation.
Therefore the maximum power is nearly independent
on the input voltage which is required for wide range
SMPS. There is no need for an extra over-sizing of the
SMPS, e.g. the transformer or the secondary diode.
Furthermore, this ELJ version implements the
frequency jitter mode to the switching clock such that
the EMI noise will be effectively reduced.
3.2 Power Management
Internal Bias
Voltage
Reference
Power Management
Latched Off Mode
Reset
VVCC < 6.23V
5.0V
Latched Off
Mode
Undervoltage Lockout
18V
10.5V
Power-Down Reset
Active Burst
Mode
Auto Restart
Mode
Startup Cell
VCCDrain
CoolMOS®
Soft Start block
Figure 3 Power Management
The Undervoltage Lockout monitors the external
supply voltage VVCC. When the SMPS is plugged to the
main line the internal Startup Cell is biased and starts
to charge the external capacitor CVCC which is
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 9 19 Nov 2012
connected to the VCC pin. This VCC charge current is
controlled to 0.9mA by the Startup Cell. When the VVCC
exceeds the on-threshold VCCon=18V, the bias circuit
are switched on. Then the Startup Cell is switched off
by the Undervoltage Lockout and therefore no power
losses present due to the connection of the Startup Cell
to the Drain voltage. To avoid uncontrolled ringing at
switch-on a hysteresis start up voltage is implemented.
The switch-off of the controller can only take place after
Active Mode was entered and VVCC falls below 10.5V.
The maximum current consumption before the
controller is activated is about 250μA.
When VVCC falls below the off-threshold VCCoff=10.5V,
the bias circuit switched off and the soft start counter is
reset. Thus it is ensured that at every startup cycle the
soft start starts at zero.
The internal bias circuit is switched off if Latched Off
Mode or Auto Restart Mode is entered. The current
consumption is then reduced to 250μA.
Once the malfunction condition is removed, this block
will then turn back on. The recovery from Auto Restart
Mode does not require re-cycling the AC line. In case
Latched Off Mode is entered, VCC needs to be lowered
below 6.23V to reset the Latched Off Mode. This is
done usually by re-cycling the AC line.
When Active Burst Mode is entered, the internal Bias is
switched off most of the time but the Voltage Reference
is kept alive in order to reduce the current consumption
below 450μA.
3.3 Improved Current Mode
x3.2
PWM OP
Improved
Current Mode
0.6V
C8
PWM-Latch
CS
FB
R
S
Q
Q
Driver
Soft-Start Comparator
Figure 4 Current Mode
Current Mode means the duty cycle is controlled by the
slope of the primary current. This is done by comparing
the FB signal with the amplified current sense signal.
t
FB
Amplified Current Signal
Ton
t
0.6V
Driver
Figure 5 Pulse Width Modulation
In case the amplified current sense signal exceeds the
FB signal the on-time Ton of the driver is finished by
resetting the PWM-Latch (see Figure 5).
The primary current is sensed by the external series
resistor RSense inserted in the source of the integrated
CoolMOS®. By means of Current Mode regulation, the
secondary output voltage is insensitive to the line
variations. The current waveform slope will change with
the line variation, which controls the duty cycle.
The external RSense allows an individual adjustment of
the maximum source current of the integrated
CoolMOS®.
To improve the Current Mode during light load
conditions the amplified current ramp of the PWM-OP
is superimposed on a voltage ramp, which is built by
the switch T2, the voltage source V1 and a resistor R1
(see Figure 6). Every time the oscillator shuts down for
maximum duty cycle limitation the switch T2 is closed
by VOSC. When the oscillator triggers the Gate Driver,
T2 is opened so that the voltage ramp can start.
In case of light load the amplified current ramp is too
small to ensure a stable regulation. In that case the
Voltage Ramp is a well defined signal for the
comparison with the FB-signal. The duty cycle is then
controlled by the slope of the Voltage Ramp.
By means of the time delay circuit which is triggered by
the inverted VOSC signal, the Gate Driver is switched-off
until it reaches approximately 156ns delay time (see
Figure 7). It allows the duty cycle to be reduced
continuously till 0% by decreasing VFB below that
threshold.
PWM OP
0.6V
10kΩ
Oscillator
C8
T2R1
C1
FB
PWM-Latch
V1
Gate Driver
Voltage Ramp
VOSC
Soft-Start Comparator
time delay
circuit (156ns)
X3.2
PWM Comparator
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 10 19 Nov 2012
Figure 6 Improved Current Mode
t
t
VOSC
0.6V
FB
t
max.
Duty Cycle
Gate Driver
Voltage Ramp
156ns time delay
Figure 7 Light Load Conditions
3.3.1 PWM-OP
The input of the PWM-OP is applied over the internal
leading edge blanking to the external sense resistor
RSense connected to pin CS. RSense converts the source
current into a sense voltage. The sense voltage is
amplified with a gain of 3.2 by PWM OP. The output of
the PWM-OP is connected to the voltage source V1.
The voltage ramp with the superimposed amplified
current signal is fed into the positive inputs of the PWM-
Comparator C8 and the Soft-Start-Comparator (see
Figure 6).
3.3.2 PWM-Comparator
The PWM-Comparator compares the sensed current
signal of the integrated CoolMOS® with the feedback
signal VFB (see Figure 8). VFB is created by an external
optocoupler or external transistor in combination with
the internal pull-up resistor RFB and provides the load
information of the feedback circuitry. When the
amplified current signal of the integrated CoolMOS®
exceeds the signal VFB the PWM-Comparator switches
off the Gate Driver.
X3.2
PWM OP
Improved
Current Mode
PWM Comparator
CS
Soft-Start Comparator
5V
C8
0.6V
FB
Optocoupler
RFB
PWM-Latch
Figure 8 PWM Controlling
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 11 19 Nov 2012
3.4 Startup Phase
Soft-Start
Comparator
Soft Start
&
G7
C7 Gate Driver
0.6V
x3.2
PWM OP
CS
Soft Start counter
Soft Start
Soft Start finish
SoftS
Figure 9 Soft Start
In the Startup Phase, the IC provides a Soft Start
period to control the maximum primary current by
means of a duty cycle limitation. The Soft Start function
is a built-in function and it is controlled by an internal
counter.
When the VVCC exceeds the on-threshold voltage, the
IC starts the Soft Start mode. The function is realized
by an internal Soft Start resistor, a current sink and a
counter. And the amplitude of the current sink is
controlled by the counter.
VSoftS
VSoftS2
VSoftS1
Figure 10 Soft Start Phase
5V
RSoftS
Soft Start
Counter
I
2I
4I
SoftS
8I
32I
Figure 11 Soft Start Circuit
After the IC is switched on, the VSoftS voltage is
controlled such that the voltage is increased step-
wisely (32 steps) with the increase of the counts. The
Soft Start counter would send a signal to the current
sink control in every 600us such that the current sink
decrease gradually and the duty ratio of the gate drive
increase gradually. The Soft Start will be finished in
20ms after the IC is switched on. At the end of the Soft
Start period, the current sink is switched off.
t
VSOFTS32
VSoftS
Gate
Driver
t
tSoft-Start
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 12 19 Nov 2012
Figure 12 Gate drive signal under Soft-Start Phase
Within the soft start period, the duty cycle is increasing
from zero to maximum gradually (see Figure 12).
In addition to Start-Up, Soft-Start is also activated at
each restart attempt during Auto Restart.
t
t
VSoftS
t
VSOFTS32
4.0V
tSoft-Start
VOUT
VFB
VOUT
tStart-Up
Figure 13 Start Up Phase
The Start-Up time tStart-Up before the converter output
voltage VOUT is settled, must be shorter than the Soft-
Start Phase tSoft-Start (see Figure 13).
By means of Soft-Start there is an effective
minimization of current and voltage stresses on the
integrated CoolMOS®, the clamp circuit and the output
overshoot and it helps to prevent saturation of the
transformer during Start-Up.
3.5 PWM Section
Oscillator
Duty Cycle
max
Gate Driver
0.75
Clock
&
G9
1
G8
PWM Section
FF1
R
S
Q
Soft Start
Comparator
PWM
Comparator
Current
Limiting
CoolMOS®
Gate
Frequency
Jitter
Soft Start
Block
Figure 14 PWM Section Block
3.5.1 Oscillator
The oscillator generates a fixed frequency of 100KHz
with frequency jittering of ±4% (which is ±4KHz) at a
jittering period of 4ms.
A capacitor, a current source and a current sink which
determine the frequency are integrated. The charging
and discharging current of the implemented oscillator
capacitor are internally trimmed, in order to achieve a
very accurate switching frequency. The ratio of
controlled charge to discharge current is adjusted to
reach a maximum duty cycle limitation of Dmax=0.75.
Once the Soft Start period is over and when the IC goes
into normal operating mode, the switching frequency of
the clock is varied by the control signal from the Soft
Start block. Then the switching frequency is varied in
range of 100KHz ± 4KHz at period of 4ms.
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 13 19 Nov 2012
3.5.2 PWM-Latch FF1
The output of the oscillator block provides continuous
pulse to the PWM-Latch which turns on/off the internal
CoolMOS® After the PWM-Latch is set, it is reset by the
PWM comparator, the Soft Start comparator or the
Current -Limit comparator. When it is in reset mode, the
output of the driver is shut down immediately.
3.5.3 Gate Driver
VCC
1
PWM-Latch
CoolMOS®
Gate Driver
Gate
Figure 15 Gate Driver
The driver-stage is optimized to minimize EMI and to
provide high circuit efficiency. This is done by reducing
the switch on slope when exceeding the internal
CoolMOS® threshold. This is achieved by a slope
control of the rising edge at the driver’s output (see
Figure 16).
t
(internal)
VGate
5V
ca. t = 130ns
Figure 16 Gate Rising Slope
Thus the leading switch on spike is minimized.
Furthermore the driver circuit is designed to eliminate
cross conduction of the output stage.
During power up, when VCC is below the undervoltage
lockout threshold VVCCoff, the output of the Gate Driver
is set to low in order to disable power transfer to the
secondary side.
3.6 Current Limiting
C11
Current Limiting
C10
1.66V
C12
&
0.31V
Leading
Edge
Blanking
220ns
G10
Spike
Blanking
190ns
Propagation-Delay
Compensation
Vcsth
Active Burst
Mode
PWM Latch
FF1
10k
D1
1pF
PWM-OP
CS
Latched Off
Mode
Figure 17 Current Limiting Block
There is a cycle by cycle peak current limiting operation
realized by the Current-Limit comparator C10. The
source current of the integrated CoolMOS® is sensed
via an external sense resistor RSense. By means of
RSense the source current is transformed to a sense
voltage VSense which is fed into the pin CS. If the voltage
VSense exceeds the internal threshold voltage Vcsth, the
comparator C10 immediately turns off the gate drive by
resetting the PWM Latch FF1.
A Propagation Delay Compensation is added to
support the immediate shut down of the integrated
CoolMOS® with very short propagation delay. Thus the
influence of the AC input voltage on the maximum
output power can be reduced to minimal.
In order to prevent the current limit from distortions
caused by leading edge spikes, a Leading Edge
Blanking is integrated in the current sense path for the
comparators C10, C12 and the PWM-OP.
The output of comparator C12 is activated by the Gate
G10 if Active Burst Mode is entered. When it is
activated, the current limiting is reduced to 0.31V. This
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 14 19 Nov 2012
voltage level determines the maximum power level in
Active Burst Mode.
Furthermore, the comparator C11 is implemented to
detect dangerous current levels which could occur if
there is a short winding in the transformer or the
secondary diode is shorten. To ensure that there is no
accidentally entering of the Latched Mode by the
comparator C11, a 190ns spike blanking time is
integrated in the output path of comparator C11.
3.6.1 Leading Edge Blanking
t
VSense
Vcsth tLEB = 220ns
Figure 18 Leading Edge Blanking
Whenever the internal CoolMOS® is switched on, a
leading edge spike is generated due to the primary-
side capacitances and reverse recovery time of the
secondary-side rectifier. This spike can cause the gate
drive to switch off unintentionally. In order to avoid a
premature termination of the switching pulse, this spike
is blanked out with a time constant of tLEB = 220ns.
3.6.2 Propagation Delay Compensation
In case of overcurrent detection, there is always
propagation delay to switch off the internal CoolMOS®.
An overshoot of the peak current Ipeak is induced to the
delay, which depends on the ratio of dI/dt of the peak
current (see Figure 19).
t
ISense
ILimit
tPropagation Delay
IOvershoot1
Ipeak1
Signal1Signal2
IOvershoot2
Ipeak2
Figure 19 Current Limiting
The overshoot of Signal2 is larger than of Signal1 due
to the steeper rising waveform. This change in the
slope is depending on the AC input voltage.
Propagation Delay Compensation is integrated to
reduce the overshoot due to dI/dt of the rising primary
current. Thus the propagation delay time between
exceeding the current sense threshold Vcsth and the
switching off of the integrated internal CoolMOS® is
compensated over temperature within a wide range.
Current Limiting is then very accurate.
For example, Ipeak = 0.5A with RSense = 2. The current
sense threshold is set to a static voltage level Vcsth=1V
without Propagation Delay Compensation. A current
ramp of dI/dt = 0.4A/µs, or dVSense/dt = 0.8V/µs, and a
propagation delay time of tPropagation Delay =180ns leads
to an Ipeak overshoot of 14.4%. With the propagation
delay compensation, the overshoot is only around 2%
(see Figure 20).
0,9
0,95
1
1,05
1,1
1,15
1,2
1,25
1,3
0 0,2 0,4 0,6 0,8 1 1,2 1,4 1,6 1,8 2
with compensation without compensation
dt
dVSense s
V
μ
Sense
V
V
Figure 20 Overcurrent Shutdown
The Propagation Delay Compensation is realized by
means of a dynamic threshold voltage Vcsth (see Figure
21). In case of a steeper slope the switch off of the
driver is earlier to compensate the delay.
t
Vcsth
VOSC
Signal1 Signal2
VSense Propagation Delay
max. Duty Cycle
off time
t
Figure 21 Dynamic Voltage Threshold Vcsth
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 15 19 Nov 2012
3.7 Control Unit
The Control Unit contains the functions for Active Burst
Mode, Auto Restart Mode and Latched Off Mode. The
Active Burst Mode and the Auto Restart Mode both
have 20ms internal Blanking Time. For the Auto
Restart Mode, a further extendable Blanking Time is
achieved by adding external capacitor at BL pin. By
means of this Blanking Time, the IC avoids entering
into these two modes accidentally. Furthermore those
buffer time for the overload detection is very useful for
the application that works in low current but requires a
short duration of high current occasionally.
3.7.1 Basic and Extendable Blanking Mode
C3
4.0V
C4
4.5V
C5
1.35V
&
G5
&
G6
0.9V
S1
1
G2
Control Unit
Active
Burst
Mode
Auto
Restart
Mode
5.0V
BL
FB
CBK
20ms
Blanking
Time
20ms
Blanking
Time
Spike
Blanking
8.0us
#IBK
Soft Start
block
Figure 22 Basic and Extendable Blanking Mode
There are 2 kinds of Blanking mode; basic mode and
the extendable mode. The basic mode has an internal
pre-set 20ms blanking time while the extendable mode
has extended blanking time to basic mode by
connecting an external capacitor to the BL pin. For the
extendable mode, the gate G5 is blocked even though
the 20ms blanking time is reached if an external
capacitor CBK is added to BL pin. While the 20ms
blanking time is passed, the switch S1 is opened by
G2. Then the 0.9V clamped voltage at BL pin is
charged to 4.0V through the internal IBK constant
current. Then G5 is enabled by comparator C3. After
the 8.0us spike blanking time, the Auto Restart Mode is
activated.
For example, if CBK = 0.22uF, IBK = 8.4uA
Blanking time = 20ms + CBK x (4.0 - 0.9) / IBK = 100ms
The 20ms blanking time circuit after C4 is disabled by
the soft stat block such that the controller can start up
properly.
The Active Burst Mode has basic blanking mode only
while the Auto Restart Mode has both the basic and the
extendable blanking mode.
3.7.2 Active Burst Mode
The IC enters Active Burst Mode under low load
conditions. With the Active Burst Mode, the efficiency
increases significantly at light load conditions while still
maintaining a low ripple on VOUT and a fast response on
load jumps. During Active Burst Mode, the IC is
controlled by the FB signal. Since the IC is always
active, it can be a very fast response to the quick
change at the FB signal. The Start up Cell is kept OFF
in order to minimize the power loss.
C4
4.5V
C6a
3.61V
C5
1.35V
FB
Control Unit
Active
Burst
Mode
Internal Bias
&
G10
Current
Limiting
&
G6
C6b
3.0V
&
G11
20 ms Blanking
Time
Figure 23 Active Burst Mode
The Active Burst Mode is located in the Control Unit.
Figure 23 shows the related components.
3.7.2.1 Entering Active Burst Mode
The FB signal is kept monitoring by the comparator C4.
During normal operation, the internal blanking time
counter is reset to 0. When FB signal falls below 1.35V,
Version 2.3 16 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Functional Description
it starts to count. When the counter reach 20ms and FB
signal is still below 1.35V, the system enters the Active
Burst Mode. This time window prevents a sudden
entering into the Active Burst Mode due to large load
jumps.
After entering Active Burst Mode, a burst flag is set and
the internal bias is switched off in order to reduce the
current consumption of the IC to approx. 450uA.
It needs the application to enforce the VCC voltage
above the Undervoltage Lockout level of 10.5V such
that the Startup Cell will not be switched on
accidentally. Or otherwise the power loss will increase
drastically. The minimum VCC level during Active Burst
Mode depends on the load condition and the
application. The lowest VCC level is reached at no load
condition.
3.7.2.2 Working in Active Burst Mode
After entering the Active Burst Mode, the FB voltage
rises as VOUT starts to decrease, which is due to the
inactive PWM section. The comparator C6a monitors
the FB signal. If the voltage level is larger than 3.61V,
the internal circuit will be activated; the Internal Bias
circuit resumes and starts to provide switching pulse. In
Active Burst Mode the gate G10 is released and the
current limit is reduced to 0.31V. In one hand, it can
reduce the conduction loss and the other hand, it can
reduce the audible noise. If the load at VOUT is still kept
unchanged, the FB signal will drop to 3.0V. At this level
the C6b deactivates the internal circuit again by
switching off the internal Bias. The gate G11 is active
again as the burst flag is set after entering Active Burst
Mode. In Active Burst Mode, the FB voltage is changing
like a saw tooth between 3.0V and 3.61V (see Figure
24).
3.7.2.3 Leaving Active Burst Mode
The FB voltage will increase immediately if there is a
high load jump. This is observed by the comparator C4.
As the current limit is ca. 31% during Active Burst
Mode, a certain load jump is needed so that the FB
signal can exceed 4.5V. At that time the comparator C4
resets the Active Burst Mode control which in turn
blocks the comparator C12 by the gate G10. The
maximum current can then be resumed to stabilize
VOUT.
1.35V
3.61V
4.5V
VFB
t
t
0.31V
1.06V
VCS
10.5V
VVCC t
t
450uA
IVCC
t
2.5mA
VOUT
t
20ms Blanking Time
Current limit level
during Active Burst
Mode
3.0V
Entering
Active Burst
Mode
Leaving
Active Burst
Mode
Blanking Timer
Figure 24 Signals in Active Burst Mode
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Version 2.3 17 19 Nov 2012
3.7.3 Protection Modes
The IC provides several protection features which are
separated into two categories. Some enter Latched Off
Mode and the others enter Auto Restart Mode. Besides
the pre-defined protection feature for the Latch off
mode, there is also an external Latch off Enable pin for
customer defined Latch off protection features. The
Latched Off Mode can only be reset if VCC falls below
6.23V. Both modes prevent the SMPS from destructive
states.The following table shows the relationship
between possible system failures and the chosen
protection modes.
VCC Overvoltage Latched Off Mode
Overtemperature Latched Off Mode
Short Winding/Short Diode Latched Off Mode
External latch enable Latched Off Mode
Overload Auto Restart Mode
Open Loop Auto Restart Mode
VCC Undervoltage Auto Restart Mode
Short Optocoupler Auto Restart Mode
3.7.3.1 Latched Off Mode
C1
24V
Spike
Blanking
8.0us
&
G1
1
G3
Thermal Shutdown
Tj >140°C
Latched
Off Mode
VCC
C4
4.5V
C11
1.66V
Spi ke
Blanking
190ns
CS
Voltage
Reference
Control Unit
Latched Off
Mode Reset
VVCC < 6.23V
FB
TLE
BL
C2
Latch
Enable
signal
8us
Blanking
Time
0.1V
1ms
counter
UVLO
#
Figure 25 Latched Off Mode
The VCC voltage is observed by comparator C1 while
the FB voltage is monitored by the comparator C4. If
the VCC voltage is > 24V and the FB is > 4.5V, the
overvoltage detection is activated. That means the
overvoltage detection is only activated if the FB signal
is outside the operating range > 4.5V, e.g. when Open
Loop happens. The logic can eliminate the possible of
entering Latch off mode if there is a small voltage
overshoots of VVCC during normal operating.
The internal Voltage Reference is switched off most of
the time once Latched Off Mode is entered in order to
minimize the current consumption of the IC. This
Latched Off Mode can only be reset if the VVCC < 6.23V.
In this mode, only the UVLO is working which controls
the Startup Cell by switching on/off at VVCCon/VVCCoff.
During this phase, the average current consumption is
only 250μA. As there is no longer a self-supply by the
auxiliary winding, the VCC drops. The Undervoltage
Lockout switches on the integrated Startup Cell when
VCC falls below 10.5V. The Startup Cell is switched off
again when VCC has exceeded 18V. Once the Latched
Off Mode was entered, there is no Start Up Phase
whenever the VCC exceeds the switch-on level of the
Undervoltage Lockout. Therefore the VCC voltage
changes between the switch-on and switch-off levels of
the Undervoltage Lockout with a saw tooth shape (see
Figure 26).
10.5V
t
IVCCStart
t
0.9mA
VOUT
VVCC
18V
Figure 26 Signals in Latched Off Mode
The Thermal Shutdown block monitors the junction
temperature of the IC. After detecting a junction
temperature higher than latched thermal shutdown
temperature; TjSD, the Latched Off Mode is entered.
The signals coming from the temperature detection and
VCC overvoltage detection are fed into a spike
blanking with a time constant of 8.0μs in order to
ensure the system reliability.
Version 2.3 18 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Functional Description
Furthermore, a short winding or short diode on the
secondary side can be detected by the comparator C11
which is in parallel to the propagation delay
compensated current limit comparator C10. In normal
operating mode, comparator C10 controls the
maximum level of the CS signal at 1.06V. If there is a
failure such as short winding or short diode, C10 is no
longer able to limit the CS signal at 1.06V. Instead the
comparator C11 detects the peak current voltage >
1.66V and enters the Latched Off Mode immediately in
order to keep the SMPS in a safe stage.
In case the pre-defined Latch Off features are not
sufficient, there is a customer defined external Latch
Enable feature. The Latch Off Mode can be triggered
by pulling down the BL pin to < 0.1V. It can simply add
a trigger signal to the base of the externally added
transistor, TLE at the BL pin. To ensure this latch
function will not be mis-triggered during start up, a 1ms
delay time is implemented to blank the unstable signal.
3.7.3.2 Auto Restart Mode
C3
4.0V
C4
4.5V
&
G5
0.9V
S1
1
G2
Control Unit
Auto
Restart
Mode
5.0V
BL
FB
CBK
20ms
Blanking
Time
Spike
Blanking
8.0us
#IBK
Figure 27 Auto Restart Mode
In case of Overload or Open Loop, the FB exceeds
4.5V which will be observed by comparator C4. Then
the internal blanking counter starts to count. When it
reaches 20ms, the switch S1 is released. Then the
clamped voltage 0.9V at VBL can increase. When there
is no external capacitor CBK connected, the VBL will
reach 4.0V immediately. When both the input signals at
AND gate G5 is positive, the Auto-Restart Mode will be
activated after the extra spike blanking time of 8.0us is
elapsed. However, when an extra blanking time is
needed, it can be achieved by adding an external
capacitor, CBK. A constant current source of IBK will start
to charge the capacitor CBK from 0.9V to 4.0V after the
switch S1 is released. The charging time from 0.9V to
4.0V are the extendable blanking time. If CBK is 0.22uF
and IBK is 8.4uA, the extendable blanking time is
around 80ms and the total blanking time is 100ms. In
combining the FB and blanking time, there is a blanking
window generated which prevents the system to enter
Auto Restart Mode due to large load jumps.
In case of VCC undervoltage, the IC enters into the
Auto Restart Mode and starts a new startup cycle.
Short Optocoupler also leads to VCC undervoltage as
there is no self supply after activating the internal
reference and bias.
In contrast to the Latched Off Mode, there is always a
Startup Phase with switching cycles in Auto Restart
Mode. After this Start Up Phase, the conditions are
again checked whether the failure mode is still present.
Normal operation is resumed once the failure mode is
removed that had caused the Auto Restart Mode.
CoolSET®-F3
ICE3A1065ELJ
Electrical Characteristics
Version 2.3 19 19 Nov 2012
4 Electrical Characteristics
Note: All voltages are measured with respect to ground (Pin 8). The voltage levels are valid if other ratings are
not violated.
4.1 Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks
min. max.
Drain Source Voltage VDS -650 VTj=110°C
Pulse drain current, tp limited by max.
Tj=150°C
ID_Puls -3.4 A
Avalanche energy, repetitive tAR limited
by max. Tj=150°C1)
1) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f
EAR -0.07 mJ
Avalanche current, repetitive tAR limited
by max. Tj=150°C
IAR -1.0 A
VCC Supply Voltage VVCC -0.3 27 V
FB Voltage VFB -0.3 5.5 V
BL Voltage VFB -0.3 5.5 V
CS Voltage VCS -0.3 5.5 V
Junction Temperature Tj-40 150 °CController & CoolMOS®
Storage Temperature TS-55 150 °C
Thermal Resistance
Junction -Ambient
RthJA -90 K/W PG-DIP-8
Soldering temperature, wavesoldering
only allowed at leads
Tsold -260 °C1.6mm (0.063in.) from case
for 10s
ESD Capability (incl. Drain Pin) VESD - 22)
2) 2KV is for all pin combinations except VCC to GND is 1KV
kV Human body model3)
3) According to EIA/JESD22-A114-B (discharging a 100pF capacitor through a 1.5kΩ series resistor)
Note: Absolute maximum ratings are defined as ratings, which when being exceeded may lead to destruction
of the integrated circuit. For the same reason make sure, that any capacitor that will be connected to pin 7
(VCC) is discharged before assembling the application circuit.Ta=25°C unless otherwise specified.
Version 2.3 20 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Electrical Characteristics
4.2 Operating Range
Note: Within the operating range the IC operates as described in the functional description.
Parameter Symbol Limit Values Unit Remarks
min. max.
VCC Supply Voltage VVCC VVCCoff 26 V
Junction Temperature of
Controller
TjCon -25 130 °C Max value limited due to thermal
shut down of controller
Junction Temperature of
CoolMOS®
TjCoolMOS -25 150 °C
4.3 Characteristics
4.3.1 Supply Section
Note: The electrical characteristics involve the spread of values within the specified supply voltage and junction
temperature range TJ from – 25 °C to 130 °C. Typical values represent the median values, which are
related to 25°C. If not otherwise stated, a supply voltage of VCC = 18 V is assumed.
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Start Up Current IVCCstart -150 250 μAVVCC =17V
VCC Charge Current IVCCcharge1 - - 5.0 mA VVCC = 0V
IVCCcharge2 0.55 0.90 1.60 mA VVCC = 1V
IVCCcharge3 -0.7 -mA VVCC =17V
Leakage Current of
Start Up Cell and CoolMOS®
IStartLeak -0.2 50 μAVDrain = 450V
at Tj=100°C
Supply Current with
Inactive Gate
IVCCsup1 -1.5 2.5 mA
Supply Current with Active Gate IVCCsup2 -2.5 4.2 mA IFB = 0A
Supply Current in Latched Off
Mode
IVCClatch -250 -μAIFB = 0A
Supply Current in
Auto Restart Mode with Inactive
Gate
IVCCrestart -250 -μAIFB = 0A
Supply Current in Active Burst
Mode with Inactive Gate
IVCCburst1 -450 950 μAVFB = 2.5V
IVCCburst2 -450 950 μAVVCC = 11.5V,VFB = 2.5V
VCC Turn-On Threshold
VCC Turn-Off Threshold
VCC Turn-On/Off Hysteresis
VVCCon
VVCCoff
VVCChys
17.0
9.8
-
18.0
10.5
7.5
19.0
11.2
-
V
V
V
CoolSET®-F3
ICE3A1065ELJ
Electrical Characteristics
Version 2.3 21 19 Nov 2012
4.3.2 Internal Voltage Reference
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Trimmed Reference Voltage VREF 4.90 5.00 5.10 Vmeasured at pin FB
IFB = 0
4.3.3 PWM Section
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Fixed Oscillator Frequency fOSC1 87 100 113 kHz
fOSC2 92 100 108 kHz Tj = 25°C
Frequency Jittering Range fjitter -±4.0 -kHz Tj = 25°C
Max. Duty Cycle Dmax 0.70 0.75 0.80
Min. Duty Cycle Dmin 0 - - VFB < 0.3V
PWM-OP Gain AV3.0 3.2 3.4
Voltage Ramp Offset VOffset-Ramp -0.6 - V
VFB Operating Range Min Level VFBmin -0.5 - V
VFB Operating Range Max level VFBmax - - 4.3 VCS=1V, limited by
Comparator C41)
1) The parameter is not subjected to production test - verified by design/characterization
FB Pull-Up Resistor RFB 915.4 22 kΩ
4.3.4 Soft Start time
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Soft Start time tSS -20.0 -ms
Version 2.3 22 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Electrical Characteristics
4.3.5 Control Unit
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Clamped VBL voltage during
Normal Operating Mode
VBLclmp 0.85 0.90 0.95 V VFB = 4V
Blanking time voltage limit for
Comparator C3
VBKC3 3.85 4.00 4.15 V
Over Load & Open Loop Detection
Limit for Comparator C4
VFBC4 4.28 4.50 4.72 V
Active Burst Mode Level for
Comparator C5
VFBC5 1.23 1.35 1.43 V
Active Burst Mode Level for
Comparator C6a
VFBC6a 3.48 3.61 3.76 VAfter Active Burst
Mode is entered
Active Burst Mode Level for
Comparator C6b
VFBC6b 2.88 3.00 3.12 VAfter Active Burst
Mode is entered
Overvoltage Detection Limit VVCCOVP 23 24 25 V VFB = 5V
Latch Enable level at BL pin VLE 0.07 0.1 0.2 V> 30μs
Charging current at BL pin IBK 5.8 8.4 10.9 μACharge starts after the
built-in 20ms blanking
time elapsed
Latched Thermal Shutdown1)
1) The parameter is not subjected to production test - verified by design/characterization. The thermal shut down
temperature refers to the junction temperature of the controller.
TjSD 130 140 150 °C
Built-in Blanking Time for
Overload Protection or enter
Active Burst Mode
tBK -20 -ms without external
capacitor at BL pin
Inhibit Time for Latch Enable
function during Start up
tIHLE -1.0 -ms Count when VCC >
18V
Spike Blanking Time before Latch off
or Auto Restart Protection
tSpike -8.0 -μs
Power Down Reset for
Latched Mode
VVCCPD 5.2 6.23 7.8 VAfter Latched Off Mode
is entered
Note: The trend of all the voltage levels in the Control Unit is the same regarding the deviation except VVCCOVP
and VVCCPD
CoolSET®-F3
ICE3A1065ELJ
Electrical Characteristics
Version 2.3 23 19 Nov 2012
4.3.6 Current Limiting
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Peak Current Limitation
(incl. Propagation Delay)
Vcsth 0.99 1.06 1.09 V dVsense / dt = 0.6V/μs
(see Figure 20)
Peak Current Limitation during
Active Burst Mode
VCS2 0.27 0.31 0.37 V
Leading Edge Blanking tLEB -220 -ns
CS Input Bias Current ICSbias -1.5 -0.2 -μAVCS =0V
Over Current Detection for
Latched Off Mode
VCS1 1.57 1.66 1.76 V
CS Spike Blanking for
Comparator C11 tCSspike -190 -ns
4.3.7 CoolMOS® Section
Parameter Symbol Limit Values Unit Test Condition
min. typ. max.
Drain Source Breakdown Voltage V(BR)DSS 600
650
-
-
-
-
V
V
Tj = 25°C
Tj = 110°C
Drain Source On-Resistance RDSon -
-
2.95
6.60
3.42
7.56
Ω
Ω
Tj = 25°C
Tj=125°C1)
1) The parameter is not subjected to production test - verified by design/characterization
at ID = 1.0A
Effective output capacitance,
energy related
Co(er) -7.0 -pF VDS = 0V to 480V
Rise Time trise -302)
2) Measured in a Typical Flyback Converter Application
-ns
Fall Time tfall -302) -ns
Version 2.3 24 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Temperature derating curve
5 Temperature derating curve
Safe Operating Area for ICE3A(B)1065(ELJ)
I
D
= f ( V
DS
)
parameter : D = 0, T
C
= 25deg.C
0.001
0.01
0.1
1
10
110 100 1000
V
DS
[V]
I
D
[A]
DC
tp = 100ms
t
p
= 0.1ms
tp = 1ms
tp = 10ms
tp = 1000ms
Figure 28 Safe Operating area (SOA) curve
(p g p )
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140
SOA temperature derating coefficient [%]
Figure 29 SOA temperature derating coefficient curve
CoolSET®-F3
ICE3A1065ELJ
Outline Dimension
Version 2.3 25 19 Nov 2012
6 Outline Dimension
PG-DIP-8
(Plastic Dual In-Line Outline)
Figure 30 PG-DIP-8 (PB-free Plating Plastic Dual In-Line Outline)
Version 2.3 26 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Marking
7 Marking
Marking
Figure 31 Marking
CoolSET®-F3
ICE3A1065ELJ
Schematic for recommended PCB layout
Version 2.3 27 19 Nov 2012
8 Schematic for recommended PCB layout
C11
bulk cap
R11
D11
C12
IC12
R12
C13
C16
C15
C14
D13
R14
R23 R22
IC21
C23 R24
C22
R21
R25
GND
Vo
D21
C21
F3 CoolSET schematic for recommended PCB layout
R13
Z11
TR1
N
L
BR1
C2
Y-CAP
C3
Y-CAP
C1
X-CAP
L1
FUSE1
C4
Y-CAP
GND
Spark Gap 3
Spark Gap 4 D11
Spark Gap 1
Spark Gap 2
FB
CS
GND NC
SOFTS VCC
F3
DRAIN
CoolSET
IC11
Figure 32 Schematic for recommended PCB layout
General guideline for PCB layout design using F3 CoolSET® (refer to Figure 32):
1. “Star Ground “at bulk capacitor ground, C11:
“Star Ground “means all primary DC grounds should be connected to the ground of bulk capacitor C11
separately in one point. It can reduce the switching noise going into the sensitive pins of the CoolSET® device
effectively. The primary DC grounds include the followings.
a. DC ground of the primary auxiliary winding in power transformer, TR1, and ground of C16 and Z11.
b. DC ground of the current sense resistor, R12
c. DC ground of the CoolSET® device, GND pin of IC11; the signal grounds from C13, C14, C15 and collector
of IC12 should be connected to the GND pin of IC11 and then “star “connect to the bulk capacitor ground.
d. DC ground from bridge rectifier, BR1
e. DC ground from the bridging Y-capacitor, C4
2. High voltage traces clearance:
High voltage traces should keep enough spacing to the nearby traces. Otherwise, arcing would incur.
a. 400V traces (positive rail of bulk capacitor C11) to nearby trace: > 2.0mm
b. 600V traces (drain voltage of CoolSET® IC11) to nearby trace: > 2.5mm
3. Filter capacitor close to the controller ground:
Filter capacitors, C13, C14 and C15 should be placed as close to the controller ground and the controller pin
as possible so as to reduce the switching noise coupled into the controller.
Guideline for PCB layout design when >3KV lightning surge test applied (refer to Figure 32):
1. Add spark gap
Spark gap is a pair of saw-tooth like copper plate facing each other which can discharge the accumulated
charge during surge test through the sharp point of the saw-tooth plate.
a. Spark Gap 3 and Spark Gap 4, input common mode choke, L1:
Gap separation is around 1.5mm (no safety concern)
Version 2.3 28 19 Nov 2012
CoolSET®-F3
ICE3A1065ELJ
Schematic for recommended PCB layout
b. Spark Gap 1 and Spark Gap 2, Live / Neutral to GROUND:
These 2 Spark Gaps can be used when the lightning surge requirement is >6KV.
230Vac input voltage application, the gap separation is around 5.5mm
115Vac input voltage application, the gap separation is around 3mm
2. Add Y-capacitor (C2 and C3) in the Live and Neutral to ground even though it is a 2-pin input
3. Add negative pulse clamping diode, D11 to the Current sense resistor, R12:
The negative pulse clamping diode can reduce the negative pulse going into the CS pin of the CoolSET® and
reduce the abnormal behavior of the CoolSET®. The diode can be a fast speed diode such as IN4148.
The principle behind is to drain the high surge voltage from Live/Neutral to Ground without passing through the
sensitive components such as the primary controller, IC11.
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