SEMICONDUCTOR aaa TECHNICAL DATA 2N2484 NPN Silicon Small-Signal Transistor .. designed for general-purpose amplifier applications. CRYSTALONCS 2805 Veterans Hi hwy, Suite 74 ea Ronkonkoma, N.Y. W775 MAXIMUM RATINGS Rating Symbol Value Unit Coltector-Emitter Voltage VCEO 60 Vde Collector-Base Voltage VcBO 60 Vde Emitter-Base Voltage VEBO 6.0 Vdc Collector Current Continuous Io 50 mAdc Total Device Dissipation Pr @ Ta = 28C syed mw Derate above 25C 12 mwrC : Watts @ Tc = 25C 6.85 ne Derate above 25C JAS CASE 22-03 Operating Junction and Storage Ty. Tstg -5 to 200 c TO-206AA (TO-18) Temperature Range ELECTRICAL CHARACTERISTICS (T, = 25C unless otherwise noted.) Characteristic | Symbot Min Max unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage! !) V(BRYCEO 60 _ Vide (Ig = 10 mAdc, Ig = 0) Collector-Base Breakdown Voltage ViBR)CBO 60 _ Vde (Ig = 10 pAde, IE = 0) Emitter-Base Breakdown Voltage V(BR)EBO 6.0 _ Vde {lg = 10 pAde, Ic = 0) Collector Cutoff Current Icbo pAde (Vc = 45 Vac, Ie = 0) _ 0.005 (Vcp = 45 Vde, te = 0, Ta = 150C) - 10 Collector Cutoff Current IcEO _ 0.002 pAdc (VcE = 5.0 Vde, ie = 0) Collector Cutaff Gurrent Ices =. 0.005 pAde (VCE = 45 Vde, ig = 0) Emitter Cutoff Current lEBo a 0.002 wAde (Vpe = 5.0 Vdc, Ig = 0) (1) Pulsed Pulse Width 280 10 380 4s. Duty Cycle tC 10 2.0% {cantinued)2N2484JAN SERIES ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) Characteristic Symbol | Min Mex Unit ON CHARACTERISTICS DC Current Gain(1) hee _ {lc = 1.0 pAde, Voce = 5.0 Ve} fs (I = 10 pAde. Veg = 5 0 Vde} 200 500 (ic = 100 Adc, Vog = 5.0 Vde) 225 675 (Ic = 500 Ade, Vg = 5.0 Vdc) 250 800 (Ig = 1.0 mAdc, VoE = 5.0 Vdc) 250 600 (Ig = 10 mAdc, Voge = 5.0 Vde)(1) 225 800 (Ic = 10 wAde. Veg = 5.0 Vde, Ta = -58C) 35 Collector-Emitter Saturation Voltage VCE (sat) a 03 Vde (Ic = 1.0 mAde. ig = 0.1 mAdc) Base-Emitter Saturation Voltage VBE\(sat) 05 0.7 Vde (lc = 0.1 mAdc. Vcg = 5.0 Vde) SMALL-SIGNAL CHARACTERISTICS Collector-Base Capacitance Cano - 5.0 pF (Vg = 5.0 Vde, Ig = 0. f= 0.1 to 1.0 MHz) Input Capacitance Cibo _ 6.0 pF (Veg = 0.5 Vdc, Ig = 0, f = 0.1 to 1.0 MHz) Smail-Signal Current Gain Ne 250 900 _ (Ig = 1.0 mAde, VcE = 5.0 Vae, f = 1.0 kHz) Small-Signal Current Transfer Ratio, Magnitude Ihte! _ (Ic = 50 pAdc, Voge = 5.0 Vdc, f = 5.0 MHz) 38 a (Ic = 500 pAdc. VcE = 5.0 Vdc, f = 30 MHz) a c Input Impedance hie a5 24 kohms {Ig = 1.0 MAdc, Veg = 5.0 Vde, f= 1.0 kHz) Voltage Feedback Ratio hre 8.0 x1o-4 (Ig = 1.0 mAde. Vg = 5.0 Vde, t = 1.0 kHz) Output Admittance hoe 7 40 pmhos (Ig = 1.0 mAdc, Vog = 5.0 Ve. f = 1.0 KHz) Noise Figure (Ic = 10 pAde. Voce = 5.0 Vdc. Ag = 10 kohms) NF a8 (f= 100 Hz) _ 75 (f= 1.0 kHz) _ 3.0 (f= 10 kHz) - 2.0 Noise Bandwidth (10 Hz to 15.7 KHz) | 3.0 dB (ic = 10 WAde, Voge = 5.0 Vdc, Rg = 10 kohms) i (1) Pulsed Puise Width 250 to 360 us Duty Cycle 1 Ota 2ce. ASSURANCE TESTING (Pre/Post Burn-in) Burn-in Conditions: Ta = 25 +3C, Vog = 30 Vde Py = 360 mW a Initial and End Point Limits Characteristics Tested Symbot Min Max Unit Collecter Cutoff Current ICBO = 5.0 nAdc Vos = 45 Vdc} DC Current Gain(1) hE 250 800 (Ic = 500 WAde, VoE = 5.0 Vde) Delta from Pre-Burn-in Measured Vaiues Min Max Detta Collector Cutoff Current sICBO ad +100 % of Initial Value or +2.0 ose whichever is greater Delta DC Current Gain(1) ANFE - 125 % of initial Value {1] Pulsed. Pulse Width 250 to 350 ws. Duty Cycle 10 10 2.0% O23