AUIRFZ44NS
VDSS 55V
RDS(on) max. 17.5m
ID 49A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1 2017-10-25
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35
IDM Pulsed Drain Current 160
PD @TA = 25°C Maximum Power Dissipation 3.8 W
PD @TC = 25°C Maximum Power Dissipation 94
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally Limited) Single Pulse Avalanche Energy (Thermally Limited) 150
EAS (Tested) Single Pulse Avalanche Energy (Tested Limited) 530
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.5 °C/W
RJA Junction-to-Ambient (PCB Mount), D2 Pak ––– 40
D2-Pak
AUIRFZ44NS
S
D
G
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRFZ44NS D2-Pak Tube 50 AUIRFZ44NS
Tape and Reel Left 800 AUIRFZ44NSTRL
G D S
Gate Drain Source
HEXFET® Power MOSFET
AUIRFZ44NS
2 2017-10-25
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.48mH, RG = 25, IAS = 25A, VGS =10V. (See fig.12)
I
SD 25A, di/dt 230A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 m VGS = 10V, ID = 25A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 19 ––– ––– S VDS = 25V, ID = 25A
IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 63
nC
ID = 25A
Qgs Gate-to-Source Charge ––– ––– 14 VDS = 44V
Qgd Gate-to-Drain Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 –––
ns
VDD = 28V
tr Rise Time ––– 60 ––– ID = 25A
td(off) Turn-Off Delay Time ––– 44 ––– RG= 12
tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10
LD Internal Drain Inductance ––– 4.5 ––– Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 1470 ––– VGS = 0V
Coss Output Capacitance ––– 360 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 49
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 160 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 25A,VGS = 0V
trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C ,IF = 25A
Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
nH
AUIRFZ44NS
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Fig. 2 Typical Output Characteristics
Fig. 3 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
Fig. 4 Normalized On-Resistance vs. Temperature
1
10
100
1000
45678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 25V
20µs PULSE WIDTH
DS
T = 175°C
J
0.0
0.5
1.0
1.5
2.0
2.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 41A
D
AUIRFZ44NS
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Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 7 Typical Source-to-Drain Diode
Forward Voltage
0
500
1000
1500
2000
2500
110100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 10203040506070
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 13
V = 44V
V = 28V
DS
DS
I = 25A
D
1
10
100
1000
0.5 1.0 1.5 2.0 2.5 3.0
T = 25°C
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
T = 175°C
J
1
10
100
1000
110100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
10µs
100µs
1ms
10ms
A
T = 25°C
T = 175°C
Single Pulse
C
J
AUIRFZ44NS
5 2017-10-25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
25 50 75 100 125 150 175
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
AUIRFZ44NS
6 2017-10-25
Fig 12c. Maximum Avalanche Energy vs. Drain Current
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Fig 13a. Gate Charge Test Circuit
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 13b. Gate Charge Waveform
0
100
200
300
400
500
25 50 75 100 125 150 175
J
E , Single Pulse Avalanche Energy (mJ)
AS
I
TOP 10A
18A
BOTTOM 25A
A
Starting T , Junction Temperature (°C)
V = 25V
D
DD
AUIRFZ44NS
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Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
AUIRFZ44NS
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D2-Pak (TO-263AB) Part Marking Information
YWWA
XX XX
Date Code
Y= Year
WW= Work Week
AUIRFZ44NS
Lot Code
Part Number
IR Logo
D2-Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
AUIRFZ44NS
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D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
AUIRFZ44NS
10 2017-10-25
† Highest passing voltage.
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level D2-Pak MSL1
ESD
Machine Model Class M3 (+/- 400V)†
AEC-Q101-002
Human Body Model Class H1B (+/- 1000V)†
AEC-Q101-001
Charged Device Model Class C5 (+/- 2000V)†
AEC-Q101-005
RoHS Compliant Yes
Revision History
Date Comments
10/27/2015 Updated datasheet with corporate template
Corrected ordering table on page 1.
10/25/2017
Removed TO-262 Pak “AUIRFSL3207Z” this devices TO-262 Pak was never released and this part was
erroneously added to the datasheet. –All pages
Corrected typo error on part marking on page 8.
