PD - 91269I IRF7507 HEXFET(R) Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching S1 G1 S2 G2 N-C HANNE L M O S F E T 1 8 2 7 3 6 4 5 D1 N-Ch P-Ch 20V -20V D1 VDSS D2 D2 P -C HANNE L M O S F E T RDS(on) 0.135 0.27 T op V ie w Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. M icro 8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS VGSM dv/dt TJ , TSTG Drain-Source Voltage Continuous Drain Current, VGS Continuous Drain Current, VGS Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10S Peak Diode Recovery dv/dt Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. N-Channel 20 2.4 1.9 19 Units P-Channel -20 -1.7 -1.4 -14 1.25 0.8 10 12 16 5.0 -5.0 -55 to + 150 240 (1.6mm from case) V A W W mW/C V V V/ns C Thermal Resistance Parameter RJA www.irf.com Maximum Junction-to-Ambient Max. 100 Units C/W 1 12/1/98 IRF7507 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance I DSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time C iss Input Capacitance C oss Output Capacitance C rss Reverse Transfer Capacitance Min. Typ. Max. Units Conditions N-Ch 20 -- -- VGS = 0V, ID = 250A V P-Ch -20 -- -- VGS = 0V, ID = -250A N-Ch -- 0.041 -- Reference to 25C, ID = 1mA V/C P-Ch -- -0.012 -- Reference to 25C, ID = -1mA -- 0.085 0.14 VGS = 4.5V, ID = 1.7A N-Ch -- 0.120 0.20 VGS = 2.7V, ID = 0.85A -- 0.17 0.27 VGS = -4.5V, ID =-1.2A P-Ch -- 0.28 0.40 VGS = -2.7V, ID =-0.6A N-Ch 0.7 -- -- VDS = VGS, ID = 250A V P-Ch -0.7 -- -- VDS = VGS, ID = -250A N-Ch 2.6 -- -- VDS = 10V, ID = 0.85A S P-Ch 1.3 -- -- VDS = -10V, ID = -0.6A N-Ch -- -- 1.0 VDS = 16 V, VGS = 0V P-Ch -- -- -1.0 VDS = -16V, VGS = 0V A N-Ch -- -- 25 VDS = 16 V, VGS = 0V, TJ = 125C P-Ch -- -- -25 VDS = -16V, VGS = 0V, TJ = 125C N-P -- -- 100 VGS = 12V N-Ch -- 5.3 8.0 N-Channel P-Ch -- 5.4 8.2 ID = 1.7A, VDS = 16V, VGS = 4.5V N-Ch -- 0.84 1.3 nC P-Ch -- 0.96 1.4 P-Channel N-Ch -- 2.2 3.3 ID = -1.2A, VDS = -16V, VGS = -4.5V P-Ch -- 2.4 3.6 N-Ch -- 5.7 -- N-Channel P-Ch -- 9.1 -- VDD = 10V, ID = 1.7A, RG = 6.0, N-Ch -- 24 -- RD = 5.7 P-Ch -- 35 -- ns N-Ch -- 15 -- P-Channel P-Ch -- 38 -- VDD = -10V, ID = -1.2A, RG = 6.0, N-Ch -- 16 -- RD = 8.3 P-Ch -- 43 -- N-Ch -- 260 -- N-Channel P-Ch -- 240 -- VGS = 0V, VDS = 15V, = 1.0MHz N-Ch -- 130 -- pF P-Ch -- 130 -- P-Channel N-Ch -- 61 -- VGS = 0V, VDS = -15V, = 1.0MHz P-Ch -- 64 -- Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode) I SM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 1.25 -- -- -1.25 A -- -- 19 -- -- -14 -- -- 1.2 TJ = 25C, IS = 1.7A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -1.2A, VGS = 0V -- 39 59 N-Channel ns -- 52 78 TJ = 25C, IF = 1.7A, di/dt = 100A/s -- 37 56 P-Channel nC TJ = 25C, IF = -1.2A, di/dt = -100A/s -- 63 95 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 21 ) N-Channel ISD 1.7A, di/dt 66A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 150C 2 Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. www.irf.com IRF7507 N - Channel 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 10 TOP 1 0.1 1.5V 20 s P U LS E W ID TH TJ = 25C A 0.01 0.1 1 I , D rain-to-S ource C urrent (A ) D I , D rain-to-S ourc e C urrent (A ) D TOP 10 1 1.5V 0.1 20 s P U LS E W ID TH TJ = 150C A 0.01 10 0.1 1 V D S , D rain-to-S ourc e V oltage (V ) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 I S D , R everse D rain C urrent (A ) I D , D rain-to-S ource C urrent (A ) 100 10 T J = 1 5 0 C T J = 2 5 C 1 V DS = 10V 2 0 s P U L S E W ID T H 0.1 1.5 2.0 2.5 3.0 3.5 4.0 10 T J = 150C T J = 25C 1 0.1 0.4 A Fig 3. Typical Transfer Characteristics 1.0 0.5 V G S = 4.5 V 0.0 -20 0 20 40 60 80 100 120 140 160 A T J , Junction Tem perature (C ) Fig 5. Normalized On-Resistance Vs. Temperature www.irf.com 1.0 1.2 1.4 1.6 A 1.8 Fig 4. Typical Source-Drain Diode Forward Voltage RDS(on) , Drain-to-Source On Resistance R D S(on) , Drain-to-Source On Resistance (N orm alized) 1.5 -40 0.8 0.8 I D = 1.7A -60 VG S = 0V 0.6 V S D , Sourc e-to-D rain V oltage (V ) V G S , G a te -to -S o u rce V o lta g e (V ) 2.0 10 V D S , D rain-to-S ource Voltage (V ) 0.6 0.4 V GS 0.2 = 2.5V V G S = 5.0V 0.0 0 2 4 6 A I D , D ra in C urren t (A ) Fig 6. Typical On-Resistance Vs. Drain Current 3 N - Channel 0.13 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 0.11 0.09 I D , Drain Current (A) R D S (o n ) , D ra in -to -S o u rc e O n R e s is ta n c e ( IRF7507 I D = 2.4 A 10 100us 1ms 1 10ms 0.07 0.05 2 3 4 5 6 7 8 A TC = 25 C TJ = 150 C Single Pulse 0.1 1 V G S , G ate-to-S ource V oltage (V ) Fig 7. Typical On-Resistance Vs. Gate Voltage V GS = C is s = C rs s = C o ss = C , C a p a c ita n c e ( p F ) 400 10 0V , f = 1M H z C gs + C g d , Cd s S H O R TE D C gd C ds + C gd C iss 300 C oss 200 C rss 100 0 A 1 10 100 V D S , D rain-to-S ource V oltage (V ) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage 4 100 Fig 8. Maximum Safe Operating Area -V G S , G ate-to-S ourc e V oltage (V ) 500 10 VDS , Drain-to-Source Voltage (V) I D = 1.7A V D S = 16V 8 6 4 2 FO R TE S T C IR C U IT S E E F IG U R E 9 0 0 2 4 6 8 A 10 Q G , Total G ate C harge (nC ) Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage www.irf.com IRF7507 P - Channel 100 100 VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V VGS - 7.5V - 5.0V - 4.0V - 3.5V - 3.0V - 2.5V - 2.0V BOTTOM - 1.5V TOP 10 -ID , D rain-to-S ourc e C urrent (A ) -I D , D rain-to-S ourc e C urrent (A ) TOP 1 0.1 -1.5V 20s P U LS E W ID TH TJ = 25C A 0.01 0.1 1 10 1 0.1 -1.5V 20 s P U LS E W ID TH TJ = 150C 0.01 0.1 10 Fig 11. Typical Output Characteristics -I S D , R everse D rain C urrent (A ) -I D , D rain-to-S ource C urrent (A ) 10 T J = 2 5 C T J = 1 5 0 C 1 0.1 V D S = -1 0 V 2 0 s P U L S E W ID T H 0.01 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 T J = 1 50 C 1 T J = 2 5C 0.1 V G S = 0V 0.01 A 0.4 -VG S , G a te -to -S o u rce V o lta g e (V ) 0.5 V G S = -4.5V 0.0 0 20 40 60 80 A 100 120 140 160 T J , Junction Tem perature (C ) Fig 15. Normalized On-Resistance Vs. Temperature www.irf.com R DS (on), Drain-to-Source On Resistance 1.0 -20 1.0 A 1.2 1.0 1.5 -40 0.8 Fig 14. Typical Source-Drain Diode Forward Voltage I D = -1.2A -60 0.6 -VS D , S ourc e-to-D rain V oltage (V ) Fig 13. Typical Transfer Characteristics R D S (on ) , D rain-to-S ource O n R esistance (N orm alized) A 10 Fig 12. Typical Output Characteristics 10 2.0 1 -VD S , D rain-to-Source V oltage (V) -V D S , D rain-to-S ource Voltage (V ) 0.8 0.6 VGS = -2.5V 0.4 VGS = -5.0V 0.2 0.0 0.0 0.5 1.0 1.5 2.0 -I D , Drain Current (A) Fig 16. Typical On-Resistance Vs. Drain Current 5 IRF7507 P - Channel 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 0.250 -IID , Drain Current (A) R DS (on) , Drain-to-Source On Resistance 0.300 ID = -1.7A 0.200 0.150 0.100 2 3 4 5 6 7 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 8 1 10 -VGS , Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage V GS C iss C rs s C oss C , C ap ac itan c e (p F ) 400 = = = = Fig 18. Maximum Safe Operating Area 10 0V, f = 1MHz C gs + C gd , C ds S H O R TE D C gd C ds + C gd -V G S , G ate-to-S ource V oltage (V ) 500 C is s 300 C oss 200 C rs s 100 0 10 I D = -1.2A V D S = -16V 8 6 4 2 FOR TES T C IR C U IT SE E FIG U R E 19 0 A 1 100 -VDS , Drain-to-Source Voltage (V) 0 100 2 4 6 8 A 10 Q G , Total G ate C h arge (nC ) -V D S , D rain-to-S ource V oltage (V ) Fig 20. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 19. Typical Capacitance Vs. Drain-to-Source Voltage N-P - Channel Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 10 0.10 0.05 P DM 0.02 0.01 t1 1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 6 www.irf.com IRF7507 Package Outline Micro8 Outline Dimensions are shown in millimeters (inches) LE AD A S S IG N M EN T S IN C H ES D IM D M ILLIM E TE R S M IN M AX M IN A .0 36 .0 44 0 .9 1 1 .11 A1 .0 04 .0 08 0 .1 0 0 .20 B .0 10 .0 14 0 .2 5 0 .36 C .005 .0 07 0 .13 0.18 D .116 .1 20 2 .95 3.05 e .0 256 B A SIC 0 .65 BA S IC e1 .0 128 B A SIC 0 .33 BA S IC E .1 16 .1 20 2.9 5 3 .0 5 H .188 .1 98 4 .78 5.03 e L .0 16 .026 0 .4 1 0 .66 6X 0 6 0 6 3 -B- D D D D D 1 D1 D 2 D 2 8 7 6 5 8 7 6 5 S IN G LE D U AL 8 7 6 5 3 H E 0.25 (.010) -A- M A M 1 2 3 4 1 2 3 4 S S S G S1 G 1 S2 G 2 1 2 3 4 MAX e1 R E C O M M E ND E D FO O T P RIN T 1.04 ( .041 ) 8X A -C B 0.10 (.004) A1 8X 0.08 (.003) M C A S L 8X B S 0.38 8X ( .015 ) C 8X 3.20 ( .126 ) 4.24 5.28 ( .167 ) ( .208 ) NO TES : 1 D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 0.65 6X ( .0256 ) 3 D IM E N S IO N S D O N O T IN C L U D E M O L D F L A S H . Part Marking Information Micro8 A D A T E C O D E (YW W ) Y = LA S T D IG IT O F YE A R W W = W EE K E X AM PLE : T H IS IS A N IR F 7501 451 7501 PART NUMBER TO P www.irf.com 7 IRF7507 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches) T ER M IN A L N U M B E R 1 12 .3 ( .4 8 4 ) 11 .7 ( .4 6 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . O U TL IN E C O N FO R M S T O E IA -4 8 1 & E IA -54 1 . 2 . C O N T R O L L IN G D IM E N SIO N : M IL L IM ET E R . 33 0.00 (1 2 .9 9 2 ) M AX. 1 4 .4 0 ( .5 6 6 ) 1 2 .4 0 ( .4 8 8 ) NO TES : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 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