IRF7507
PD - 91269I
lGeneration V Technology
lUltra Low On-Resistance
lDual N and P Channel MOSFET
lVery Small SOIC Package
lLow Profile (<1.1mm)
lAvailable in Tape & Reel
lFast Switching
HEXFET® Power MOSFET
N-Ch P-Ch
VDSS 20V -20V
RDS(on) 0.135Ω0.27Ω
12/1/98
Micro8
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Description
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
45
6
7
N-CHANNEL MOSFET
P-CHANNEL MOSFET
www.irf.com 1
Parameter Max. Units
N-Channel P-Channel
VDS Drain-Source Voltage 20 -20 V
ID @ TA = 25°C Continuous Drain Current, VGS 2.4 -1.7
ID @ TA = 70°C Continuous Drain Current, VGS 1.9 -1.4 A
IDM Pulsed Drain Current 19 -14
PD @TA = 25°C Maximum Power Dissipation1.25 W
PD @TA = 70°C Maximum Power Dissipation0.8 W
Linear Derating Factor 10 mW/°C
VGS Gate-to-Source Voltage ± 12 V
VGSM Gate-to-Source Voltage Single Pulse tp<10µS 16 V
dv / dt Peak Diode Recovery dv/dt 5.0 -5.0 V/ns
TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C
Soldering Temperature, for 10 seconds 240 (1.6mm from case)
Thermal Resistance Parameter Max. Units
RθJA Maximum Junction-to-Ambient 100 °C/W
Absolute Maximum Ratings
IRF7507
2www.irf.com
Parameter Min. Typ. Max. Units Conditions
N-Ch 20 — — VGS = 0V, ID = 250µA
P-Ch -20 — — VGS = 0V, ID = -250µA
N-Ch — 0.041 — Reference to 25°C, ID = 1mA
P-Ch — -0.012 — Reference to 25°C, I D = -1mA
— 0.085 0.14 VGS = 4.5V, ID = 1.7A
— 0.120 0.20 VGS = 2.7V, ID = 0.85A
— 0.17 0.27 VGS = -4.5V, ID =-1.2A
— 0.28 0.40 VGS = -2.7V, ID =-0.6A
N-Ch 0.7 — — VDS = VGS, ID = 250µA
P-Ch -0.7 — — VDS = VGS, ID = -250µA
N-Ch 2.6 — — VDS = 10V, ID = 0.85A
P-Ch 1.3 — — VDS = -10V, ID = -0.6A
N-Ch — — 1.0 VDS = 16V, VGS = 0V
P-Ch — — -1.0 VDS = -16V, VGS = 0V
N-Ch — — 25 VDS = 16 V, VGS = 0V, TJ = 125°C
P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V
N-Ch –– 5.3 8.0
P-Ch — 5.4 8.2
N-Ch –– 0.84 1.3
P-Ch — 0.96 1.4
N-Ch –– 2.2 3.3
P-Ch — 2.4 3.6
N-Ch — 5.7 —
P-Ch — 9.1 —
N-Ch — 24 —
P-Ch — 35 —
N-Ch — 15 —
P-Ch — 38 —
N-Ch — 16 —
P-Ch — 43 —
N-Ch — 260 —
P-Ch — 240 —
N-Ch — 130 — pF
P-Ch — 130 —
N-Ch — 61 —
P-Ch — 64 —
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient
RDS(ON) Static Drain-to-Source On-Resistance
VGS(th) Gate Threshold Voltage
gfs Forward Transconductance
IDSS Drain-to-Source Leakage Current
QgTotal Gate Charge
Qgs Gate-to-Source Charge
Qgd Gate-to-Drain ("Miller") Charge
td(on) Turn-On Delay Time
trRise Time
td(off) Turn-Off Delay Time
tfFall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 21 )
Notes:
N-Channel ISD
≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Parameter Min. Typ. Max. Units Conditions
N-Ch — — 1.25
P-Ch — — -1.25
N-Ch — — 19
P-Ch — — -14
N-Ch — — 1.2 TJ = 25°C, IS = 1.7A, V GS = 0V
P-Ch — — -1.2 TJ = 25°C, IS = -1.2A, VGS = 0V
N-Ch — 39 59
P-Ch — 52 78
N-Ch — 37 56
P-Ch — 63 95
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
V
V/°C
Ω
V
S
µA
nC
ns
N-Channel
ID = 1.7A, VDS = 16V, VGS = 4.5V
P-Channel
ID = -1.2A, VDS = -16V, VGS = -4.5V
N-Channel
VDD = 10V, ID = 1.7A, RG = 6.0Ω,
RD = 5.7Ω
P-Channel
VDD = -10V, ID = -1.2A, RG = 6.0Ω,
RD = 8.3Ω
N-Channel
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
P-Channel
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
N-Ch
P-Ch
ISContinuous Source Current (Body Diode)
ISM Pulsed Source Current (Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
A
V
ns
nC
N-Channel
TJ = 25°C, IF = 1.7A, di/dt = 100A/µs
P-Channel
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
IRF7507
www.irf.com 3
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain
Current
N - Channel
0.01
0.1
1
10
100
0.1 1 10
I , D rai n-to -S ou rc e C ur ren t (A )
D
V , D rain-to-Source V oltage (V)
DS
20µs PULS E WIDTH
T = 2 5 °C
A
VGS
TOP 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOT TOM 1.5V
1.5V
J
0.01
0.1
1
10
100
0.1 1 10
I , D ra in-to -S ou rc e Cu rre nt (A )
D
V , D rain-to-S ource V oltage (V )
DS
A
VGS
TO P 7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTT OM 1.5V
1.5V
20µs P ULS E WIDTH
T = 1 5 0 °C
J
0.1
1
10
100
1.5 2.0 2.5 3.0 3.5 4.0
T = 25°C
T = 150 °C
J
J
GS
V , Gate-to-Source Voltage (V )
D
I , D rain-to-Source C urrent (A)
A
V = 10V
20µs PULSE WIDTH
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
T = 25°C
T = 150°C
J
J
V = 0 V
GS
V , S o urc e -to-D rain V olta ge (V )
I , R everse D rain C urrent (A )
SD
SD
A
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junc tion Temperature (°C)
R , D ra in- to-So urc e O n R e s is ta nc e
DS(on)
(Normalized)
A
V = 4 .5 V
GS
I = 1.7A
D
0.0
0.2
0.4
0.6
0.8
0246
A
I , Drain Current (A)
D
V = 2.5V
GS
V = 5 .0 V
GS
RDS(on), Drain-to-Source On Resistance
IRF7507
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N - Channel
0.05
0.07
0.09
0.11
0.13
2345678
A
R , Dra in -to -So u rc e On Res ista n c e
DS(on)
(Ω
GS
V , Ga te -to -S o u rc e V o lta g e (V )
I = 2 .4A
D
0
100
200
300
400
500
1 10 100
C, C apacitance (pF)
DS
V , D ra in-to -Sou rc e V olta
g
e (V)
A
V = 0 V, f = 1 MHz
C = C + C , C SHO RTED
C = C
C = C + C
GS
is s
g
s
g
d d s
rs s
g
d
o s s d s
g
d
C
iss
C
oss
C
rss
0
2
4
6
8
10
0246810
G
GS
A
-V , Gate-to-Source V oltage (V )
Q , T o ta l Ga te C h a rg e (n C )
FOR TE ST C IR C U IT
S EE F IGUR E 9
I = 1 . 7 A
V = 1 6 V
D
DS
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF7507
www.irf.com 5
Fig 11. Typical Output Characteristics
Fig 13. Typical Transfer Characteristics
Fig 12. Typical Output Characteristics
Fig 14. Typical Source-Drain Diode
Forward Voltage
Fig 15. Normalized On-Resistance
Vs. Temperature Fig 16. Typical On-Resistance Vs. Drain
Current
P - Channel
0.01
0.1
1
10
100
0.1 1 10
D
DS
20µs P ULS E WIDTH
T = 25 °C
A
-I , Drain-to-S ource C urrent (A )
-V , Drain-to-Source Vo ltage (V)
J
-1.5V
VGS
TO P - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOT TO M - 1.5V
0.01
0.1
1
10
100
0.1 1 10
D
DS
20µs PULS E WIDTH
T = 150°C
A
-I , D rain-to-S ou rce C urren t (A)
-V , Dra in -to- S o ur ce V o lta ge (V )
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTO M - 1.5V
-1.5V
0.01
0.1
1
10
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
T = 25°C
T = 15 0°C
J
J
GS
D
A
-I , Drain-to-Source C urrent (A)
-V , Gate-to-Source V oltage (V)
V = - 1 0V
20µs PULS E WIDTH
DS
0.01
0.1
1
10
0.4 0.6 0.8 1.0 1.2
T = 25°C
T = 150°C
J
J
V = 0V
GS
SD
SD
A
-I , Reverse D rain Current (A )
-V , Source-to-Drain Voltage (V)
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Tem perature (°C )
R , D rain -to-S o urc e On R e sis tan ce
DS(on)
(Normalized)
A
I = - 1 .2A
V = -4 .5 V
D
GS
0.0 0.5 1.0 1.5 2.0
0.0
0.2
0.4
0.6
0.8
1.0
R , Drain-to-Source On Resistance
-I , Drain Current (A)
D
DS (on)
VGS = -2.5V
VGS = -5.0V
IRF7507
6www.irf.com
Fig 18. Maximum Safe Operating Area
Fig 17. Typical On-Resistance Vs. Gate
Voltage
P - Channel
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
N-P - Channel
0.1
1
10
100
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
0
100
200
300
400
500
1 10 100
C, Capacitance (pF)
A
DS
-V , Dra in - to -S o u rc e Vo lta
g
e (V)
V = 0V, f = 1MHz
C = C + C , C SHORT ED
C = C
C = C + C
GS
iss
s
d d s
rss
d
os s d s
d
C
iss
C
oss
C
rss
0
2
4
6
8
10
0246810
G
GS
A
-V , G a te- to-So urc e V o lta g e (V )
Q , T o ta l Ga te C ha r ge ( n C )
I = - 1.2A
V = -16V
FOR TEST CIRCUIT
SEE FIGURE 19
D
DS
2345678
0.100
0.150
0.200
0.250
0.300
R , Drain-to-Source On Resistance
-V , Gate-to-Source Voltage (V)
GS
DS (on)
ID = -1.7A
IRF7507
www.irf.com 7
Package Outline
Micro8 Outline
Dimensions are shown in millimeters (inches)
Micro8
Part Marking Information
PART NU MBER
451
7501
TOP
EXAMPLE : THIS IS AN IRF7501
A
DATE CO DE (YWW)
Y = L A ST D IGIT OF Y E A R
WW = WEEK
INCH E S MIL L IM ET ERS
MIN MA X MIN MAX
A
0.10 (.004)
0 .2 5 (.01 0 ) M A M
H
1 2 3 4
8 7 6 5
D
- B - 3
3E
- A -
e
6X e 1
- C -
B 8X
0 .0 8 ( .0 0 3 ) M C A S B S
A 1 L
8X C
8X
θ
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2 CON TROL L ING DIMENSION : IN CH .
3 DIMENS IONS DO NO T INCLUDE M OLD FLASH.
A .0 3 6 .0 4 4 0 .91 1.11
A 1 .0 0 4 .0 0 8 0 .10 0.20
B .0 1 0 .0 1 4 0 .25 0.36
C .0 0 5 .00 7 0 .1 3 0 .1 8
D .1 1 6 .12 0 2 .9 5 3 .0 5
e .0 2 5 6 BAS IC 0 .6 5 B A SIC
e 1 .0 1 2 8 BASIC 0 .3 3 B A SIC
E .1 1 6 .1 2 0 2 .95 3.0 5
H .1 8 8 .19 8 4 .7 8 5 .0 3
L .0 1 6 .0 2 6 0 .41 0.66
θ
0° 6° 0 ° 6 °
DIM
LEAD ASSIGN M ENTS
SINGLE DUAL
D D D D D1 D1 D 2 D2
S S S G S1 G1 S2 G2
1 2 3 4 1 2 3 4
8 7 6 5 8 7 6 5
RECOMM ENDED FOO TPRIN T
1.04
( .0 41 )
8X
0.38
( .0 15 ) 8X
3.20
( .1 26 ) 4.24
( .167 ) 5.28
( .208 )
0.65
( .0256 ) 6X
IRF7507
8www.irf.com
Tape & Reel Information
Micro8
Dimensions are shown in millimeters (inches)
33 0.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CONT RO LLING D IMENS ION : M ILLIM ETER.
2. OU TLINE CO NFO RM S TO EIA-481 & EIA-541.
FEED DIRECTION
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
NOTES:
1. O UTLINE CO NFORM S TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : M ILLIMETER.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: + + 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/ Data and specifications subject to change without notice. 12/98