-channel JFETs i n Siliconix e designed for... Performance Curves NC See Section 5 @ Analog Switches BENEFITS @ Low Insertion Loss m Choppers Rpsion) < 30 2 (U1897E) @ No Error or Offset Voltage Generated = Commutators by Closed Switch Purely Resistive ABSOLUTE MAXIMUM RATINGS (25C) TO-92 Gate-Drain or Gate-Source Voltage..............-40V See Section 7 Gate Current... 2... 0c cee eee ee eee ee ee TOMA Total Device Dissipation at 25C Ambient (Derate 3.27 mW/C).......... tenet ee eee 360 MW Operating Temperature Range.............55 to 135C Storage Temperature Range............... 55 to 150C Lead Temperature Range a8. 5 (1/16 from case for 10 seconds) ..............300C (-18) S 6 efa . s $ D D s a im . jiaw Bot Vie ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) Seno venient oe U1897 U1898 Uis99 " " Characteristic Min T Max | Min | Max | Min 1 Max Unit Test Conditions 1 BVGss Gate-Source Breakdown Voltage 40 40 40 Ig=-1 LA, Vpg=0 2 BVpGO Drain-Gate Breakdown Voltage 40 40 40 Vv Ig =-1 yA, Ig =0 3 BVsco Source-Gate Breakdown Voltage 40 40 40 Ig=-1uA, ip =90 al less Gate Reverse Current 400 400 ~400 VGg =~20 V, Vps = 9 5 Ipco Drain-Gate Leakage Current 200 200 200 VpG = 20V, Ig =0 = A 6! s|'!sco Source-Gate Leakage Current 200 200 200 | VsG=20V,Ip=90 7,7 200 200 200 Vps = 20 V, Vgg =12 V (U1897E) = Al loot) Drain Cutoff Current Ves = -8 V (U1898E) 8]|T 10 10 10] 0A | veg =~6 v (U1899E] [Ta=e5c _ I 9] [VGstott} _Gate-Source Cutoff Voltage -5.0| -10] -2.0] -7.0]}-1.0]-5.0] V | Vpg=20V,Ip=i1ndA Saturation Drain Current 7 10 ipss (Note 1) 30 15 8.0 mA | Vpg = 20 V, Vag = 0 Vagg = 0, Ip = 6.6 mA (U1897E) 1 VbSlon) Drain-Source ON Voltage 0.2 0.2 0.2 Vv Ip = 4.0 mA (U1898E}, Ip = 2.5 mA (U1899E) Static Drain-Source ON 12 'DSton) Resistance 30 50 80} 2 | Ip=1mA, Ves70 13 CoG Drain-Gate Capacitance 5 5 VpG = 20V, Is =0 14 Csg Source-Gate Capacitance 5 5 VsG = 20 V. Ip =0 . Common-Source Input pF f=1 MHz 15} D| Cigs Capacitance 16 16 16 1 Y c A Vos = 20 V, Vgsg =0 N Ommon-Source Reverse 16 A Crss Transfer Capacitance 35 35 3.5 17 tdlon) Turn ON Delay Time 15 15 20 Switching Time Test Conditions 181g |e Rise Time 10 20 40 | ns U1897E = U1B9BE = L1898E Voo 3V 3V 3V VGSion) Q 0 0 . v -12V -8V +4V Turn-OFF Ti 4 0 GS (off) 19) toff urn-O ime Oo 60 8 RL 430 2 700 2 1100 2 IDion) 6.6 MA 4mA =. 2.5mA NOTE: NC 1. Pulse test pulsewidth = 300 us; duty cycle < 3%. 4-43 1979 Siliconix incorporated 668LN S68LN Z68LN SL-668LN SL-S68LN SlL-Z68LN xIUgSI