DATA SH EET
Preliminary specification
Supersedes data of 1996 Oct 14 1999 May 25
DISCRETE SEMICONDUCTORS
1PS76SB17
Schottky barrier diode
halfpage
M3D049
1999 May 25 2
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
FEATURES
•Low forward voltage
•Low diode capacitance
•ESD >500 V; Human body model
•Very small plastic SMD package.
APPLICATIONS
•UHF mixers
•Sampling circuits
•Modulators
•Phase detectors.
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SOD323 very small plastic
SMD package.
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: S7.
The marking bar indicates the cathode.
handbook, 4 columns
ka
MAM283
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tamb =25°C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD323 standard mounting conditions.
SYMBOL PARAMETER MIN. MAX. UNIT
VRcontinuous reverse voltage −4V
I
Fcontinuous forward current −30 mA
Tstg storage temperature −65 +150 °C
Tjjunction temperature −100 °C
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VFforward voltage see Fig.2
IF= 0.1 mA −300 mV
IF= 1mA 360 450 mV
IF=10mA 470 600 mV
IRreverse current VR= 3 V; see Fig.3 0.15 0.25 µA
Cddiode capacitance f = 1 MHz; VR= 0 V; see Fig.4 0.8 1 pF
f = 1 MHz; VR= 0.5 V; see Fig.4 0.65 −pF
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 450 K/W
1999 May 25 3
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
GRAPHICAL DATA
(1) Tamb = 100 °C.
(2) Tamb =60°C.
(3) Tamb =25°C.
(4) Tamb =−40 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
handbook, halfpage
10
2
10
1
0
MLC795
600 800400200 VF (mV)
10
−1
10
−2
IF
(mA)
(1)
(2)
(3)
(4)
(1) Tamb = 100 °C.
(2) Tamb =60°C.
(3) Tamb =25°C.
(4) Tamb =−40 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook, halfpage
104
103
102
10
1
10 10
MLC796
213
V (V)
IR
(nA)
R
(1)
(2)
(3)
(4)
f = 1 MHz; Tamb =25°C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
01234
0.4
0.8
MLC797
0.7
0.6
0.5
V (V)
R
Cd
(pF)
1999 May 25 4
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOD323 98-09-14
0 1 2 mm
scale
SOD323
UNIT bpcDEQv
mm 0.40
0.25
+ 0.05
− 0.05 0.25
0.10 0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3 0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
12
H
E
L
p
A
E
b
p
A
1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
vMA
A
c
(1)
1999 May 25 5
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 May 25 6
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
NOTES
1999 May 25 7
Philips Semiconductors Preliminary specification
Schottky barrier diode 1PS76SB17
NOTES
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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Internet: http://www.semiconductors.philips.com
1999 65
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Printed in The Netherlands 115002/02/pp8 Date of release: 1999 May 25 Document order number: 9397 750 05893
