2010-04-06
BF888
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1
2
3
4
High Performance Bipolar NPN RF Transistor
• High transducer gain of typ. 14 dB @ 25 mA,6 GHz
• Low minimum noise figure of typ. 0.85 dB @ 6GHz
• High output compression of typ. 11 dBm @ 25 mA
• Pb-free (RoHS compliant) package
• For a wide range of non-automotive applications
- 2nd and 3rd LNA stage and mixer stage in LNB
- 5.8 GHz analog/digital cordless phone
- Satellite radio SDARS
- WLAN, WiMAX, UWB
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BF888 RYs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= − 55 °C
VCEO
4.0
3.5
V
Collector-emitter voltage VCES 13
Collector-base voltage VCBO 13
Emitter-base voltage VEBO 1.2
Collector current IC30 mA
Base current IB3
Total power dissipation1)
TS ≤ 89 °C
Ptot 160 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-55 ... 150
Storage temperature TSt
g
-55 ... 150
1Ts is measured on the emitter lead at the soldering point to the pcb
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 380 K/W
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Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4 4.7 - V
Collector-emitter cutoff current
VCE = 5 V, VBE = 0
ICES - 1 - nA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - 1 -
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - 10 -
DC current gain
IC = 25 V, VCE = 3 V, pulse measured
hFE - 250 - -
1For calculation of RthJA please refer to Application Note Thermal Resistance
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Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 25 mA, VCE = 3 V, f = 2 GHz
fT- 47 - GHz
Collector-base capacitance
VCB = 3 V, f=1 MHz, VBE = 0, emitter grounded
Ccb - 0.08 - pF
Collector emitter capacitance
VCE = 3 V, f = 1 MHz, VBE = 0, base grounded
Cce - 0.35 -
Emitter-base capacitance
VEB = 0.5 V, f=1 MHz, VCB=0, collector grounded
Ceb - 0.45 -
Noise figure
IC = 8 mA, VCE = 3 V, f = 1.8 GHz, ZS = ZSopt
IC = 8 mA, VCE = 3 V, f = 6 GHz, ZS = ZSopt
F
-
-
0.5
0.85
-
-
dB
Power gain
IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 1.8 GHz
Gms - 27 - dB
Power gain, maximum available1)
IC = 25 mA, VCE = 3 V, ZS = ZSopt, ZL = ZLopt,
f = 6 GHz
Gma - 17 - dB
Transducer gain
IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 6 GHz
|S21e|2
-
-
24.5
14
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 25 mA, f = 1.8 GHz,
ZS = ZL = 50 Ω
IP3- 25 - dBm
1dB Compression point
IC = 25 mA, VCE = 3 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
P-1dB - 11 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50 Ω from 0.1 MHz to 6 GHz
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Package SOT343
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code (YM)
BGA420
Type code
0.2
4
2.15
8
2.3
1.1
Pin 1
0.6
0.8
1.6
1.15
0.9
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15 +0.1
-0.05
0.3 +0.1
2±0.2
±0.1
0.9
12
34
A
+0.1
0.6
A
M
0.2
1.3
-0.05
-0.05
0.15
0.1 M
4x
0.1
0.1 MIN.
Pin 1
Manufacturer
2010-04-06
BF888
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
