VS-80EBU04 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt(R) FEATURES * Ultrafast recovery time * 175 C max. operating junction temperature * Screw mounting only Cathode Anode * Designed and JEDEC-JESD47 qualified according to * Compliant to RoHS Directive 2002/95/EC * PowerTab(R) package PowerTab(R) BENEFITS * Reduced RFI and EMI * Higher frequency operation * Reduced snubbing PRODUCT SUMMARY Package PowerTab(R) IF(AV) 80 A VR 400 V VF at IF 1.3 V trr (typ.) See recovery table * Reduced parts count DESCRIPTION/APPLICATIONS TJ max. 175 C Diode variation Single die These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current SYMBOL MAX. UNITS 400 V VR IF(AV) Single pulse forward current IFSM Maximum repetitive forward current IFRM Operating junction and storage temperatures TEST CONDITIONS TC = 101 C 80 TC = 25 C TJ, TStg A 800 Square wave, 20 kHz 160 - 55 to 175 C ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL TEST CONDITIONS MIN. TYP. MAX. VBR, Vr IR = 100 A 400 - - IF = 80 A - 1.1 1.3 VF IF = 80 A, TJ = 175 C - 0.92 1.08 0.98 1.15 - 50 A IF = 80 A, TJ = 125 C VR = VR rated - UNITS V Reverse leakage current IR TJ = 150 C, VR = VR rated - - 2 mA Junction capacitance CT VR = 200 V - 50 - pF Series inductance LS Measured lead to lead 5 mm from package body - 3.5 - nH Revision: 15-Jun-11 Document Number: 93025 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge SYMBOL trr IRRM Qrr TEST CONDITIONS MIN. TYP. MAX. IF = 1 A, dIF/dt = 200 A/s, VR = 30 V - 50 60 TJ = 25 C - 87 - TJ = 125 C - 151 - - 9.3 - - 17.2 - TJ = 25 C TJ = 125 C IF = 80 A VR = 200 V dIF/dt = 200 A/s UNITS ns A TJ = 25 C - 405 - TJ = 125 C - 1300 - MIN. TYP. MAX. - - 0.70 - 0.2 - - - 5.02 - 0.18 - oz. - 2.4 (20) N*m (lbf * in) nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Thermal resistance, junction to case RthJC Thermal resistance, junction to heatsink RthCS TEST CONDITIONS K/W Mounting surface, flat, smooth and greased Weight 1.2 (10) Mounting torque Marking device Revision: 15-Jun-11 UNITS Case style PowerTab(R) g 80EBU04 Document Number: 93025 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors 1000 T J = 175C Reverse Current - I R (A) Instantaneous Forward Current - I F (A) 1000 100 100 125C 10 1 25C 0.1 0.01 0.001 T = 175C 0 J 100 200 300 400 T = 125C Reverse Voltage - VR (V) T = 25C Fig. 1 - Typical Values of Reverse Current vs. Reverse Voltage J J 1000 Junction Capacitance - C T (pF) 10 T J = 25C 100 1 0 0.5 1 1.5 2 2.5 10 Forward Voltage Drop - VFM (V) 1 10 100 1000 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage Thermal Impedance Z thJC (C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jun-11 Document Number: 93025 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors 250 Vr = 200V Tj = 125C Tj = 25C 160 200 IF = 160A IF = 80A IF = 40A 140 DC trr ( ns ) Allowable Case Temperature (C) 180 120 150 100 Square wave (D = 0.50) 80% Rated Vr applied 80 100 see note (1) 60 0 20 40 60 80 100 120 Average Forward Current - IF(AV) (A) 50 100 1000 di F /dt (A/s ) Fig. 2 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 4500 140 4000 120 3500 100 3000 80 Qrr ( nC ) Average Power Loss ( Watts ) RMS Limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 40 20 20 40 60 80 100 IF = 160A IF = 80A IF = 40A 2000 1500 1000 0 0 2500 Vr = 200V Tj = 125C Tj = 25C 120 Average Forward Current - IF(AV) (A) 500 0 100 1000 di F /dt (A/s ) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR (1) Revision: 15-Jun-11 Document Number: 93025 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Jun-11 Document Number: 93025 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 80 E B U 04 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Single diode 4 - PowerTab(R) (ultrafast/hyperfast only) 5 - Ultrafast recovery 6 - Voltage rating (04 = 400 V) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95240 Part marking information www.vishay.com/doc?95370 Application note www.vishay.com/doc?95179 Revision: 15-Jun-11 Document Number: 93025 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab(R) 15.90 (0.62) 15.60 (0.61) 1.35 (0.05) 1.20 (0.04) O 4.20 (O 0.16) O 4.00 (O 0.15) 4.95 (0.19) 4.75 (0.18) O 4.20 (O 0.16) O 4.00 (O 0.15) 5.20 (0.20) 4.95 (0.19) Lead 2 3.09 (0.12) 3.00 (0.11) 5.45 REF. (0.21 REF.) 0.60 (0.02) 0.40 (0.01) 39.8 (1.56) 39.6 (1.55) 12.10 (0.47) 12.40 (0.48) Lead 1 27.65 (1.08) 27.25 (1.07) 15.60 (0.61) 14.80 (0.58) 18.25 (0.71) 18.00 (0.70) 4.20 (0.16) 4.00 (0.15) 8.45 (0.33) 8.20 (0.32) DIMENSIONS in millimeters (inches) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000