2N5322 (R) SMALL SIGNAL PNP TRANSISTOR DESCRIPTION The 2N5322 is a silicon Epitaxial Planar PNP transistor in Jedec TO-39 metal case. It is especially intended for high-voltage medium power application in industrial and commercial equipments. The complementary NPN type is 2N5320. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (I E = 0) -100 V V CEV Collector-Emitter Voltage (V BE = 1.5V) -100 V V CEO Collector-Emitter Voltage (I B = 0) -75 V V EBO Emitter-Base Voltage (I C = 0) IC I CM -6 V -1.2 A Collector Peak Current -2 A Collector Current Base Current -1 A P tot Total Dissipation at T amb = 25 o C 1 W P tot Total Dissipation at T C = 25 o C IB T stg Tj Storage Temperature Max. Operating Junction Temperature September 2002 10 W -65 to 175 o C 175 o C 1/4 2N5322 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o 15 150 o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit -0.5 A I CBO Collector Cut-off Current (I E = 0) V CB = -80 V I EBO Collector Cut-off Current (I C = 0) V EB = -5 V Collector-Emitter Breakdown Voltage (V BE = 1.5V) I C = -100 A -100 V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) I C = -10 mA -75 V V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) I E = -100 A -6 V V CE(sat) Collector-Emitter Saturation Voltage I C = -500 mA I B = -50 mA V BE Base-Emitter Voltage I C = -500 mA V CE = -4 V h FE DC Current Gain I C = -500 mA I C = -1 A V (BR)CEV V CE = -4 V V CE = -2 V f = 10 MHz 30 10 -0.7 V -1.1 V 130 fT Transition Frequency I C = -50 mA V CE = -4 V t on Turn-on Time I C = -500 mA I B1 = -50 mA V CC = -30 V 100 ns t off Turn-off Time I C = -500 mA V CC = -30 V I B1 = -IB2 = -50 mA 1000 ns Pulsed: Pulse duration = 300 s, duty cycle = 1 % 2/4 A -0.1 50 MHz 2N5322 TO-39 MECHANICAL DATA mm inch DIM. MIN. A TYP. MAX. MIN. 12.7 TYP. MAX. 0.500 B 0.49 0.019 D 6.6 0.260 E 8.5 0.334 F 9.4 0.370 G 5.08 0.200 H 1.2 0.047 I 0.9 0.035 45o (typ.) L D G A I E F H B L P008B 3/4 2N5322 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4