IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
OptiMOS™3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C2) 80 A
TC=100 °C 58
Pulsed drain current2) ID,pulse TC=25 °C 320
Avalanche energy, single pulse
EAS ID=73 A, RGS=25 W110 mJ
Gate source voltage
VGS ±20 V
Power dissipation
Ptot TC=25 °C 125 W
Operating and storage temperature
Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
1)J-STD20 and JESD22
2) See figure 3
VDS
100
V
RDS(on),max (TO 252)
8.2
mW
80
A
Product Summary
Type
IPP086N10N3 G
IPI086N10N3 G
IPB083N10N3 G
IPD082N10N3 G
Package
PG-TO220-3
PG-TO262-3
PG-TO263-3
PG-TO252-3
Marking
086N10N
086N10N
083N10N
082N10N
Rev. 2.6 page 1 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 1.2 K/W
Thermal resistance,
RthJA minimal footprint - - 62
junction - ambient
6 cm2 cooling area3) - - 50
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 100 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=75 µA 22.7 3.5
Zero gate voltage drain current
IDSS
VDS=100 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=100 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance
RDS(on)
VGS=10 V, ID=73 A,
TO 220, TO 262
-7.4 8.6
mW
VGS=10 V, ID=73 A,
TO263
-7.2 8.3
VGS=10 V, ID=73 A,
TO 252
- 7 8.2
VGS=6 V, ID=36 A, TO
220, TO 262
-9.3 15.4
VGS=6 V, ID=36 A, TO
263
-9.0 15.1
VGS=6 V, ID=36 A, TO
252
-8.9 15
Gate resistance
RG- 1 - W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=80 A
45 89 - S
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
Rev. 2.6 page 2 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -2990 3980 pF
Output capacitance
Coss -523 696
Reverse transfer capacitance
Crss -21 -
Turn-on delay time
td(on) -18 -ns
Rise time
tr-42 -
Turn-off delay time
td(off) -31 -
Fall time
tf- 8 -
Gate Charge Characteristics4)
Gate to source charge
Qgs -15 -nC
Gate to drain charge
Qgd - 8 -
Switching charge
Qsw -14 -
Gate charge total
Qg-42 55
Gate plateau voltage
Vplateau -4.9 - V
Output charge
Qoss VDD=50 V, VGS=0 V -55 73 nC
Reverse Diode
Diode continous forward current IS- - 80 A
Diode pulse current
IS,pulse - - 320
Diode forward voltage
VSD
VGS=0 V, IF=80 A,
Tj=25 °C
-1.0 1.2 V
Reverse recovery time
trr -71 -ns
Reverse recovery charge
Qrr -123 -nC
4) See figure 16 for gate charge parameter definition
VR=50 V, IF=73 A,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=50 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=73 A, RG,ext=1.6 W
VDD=50 V, ID=73 A,
VGS=0 to 10 V
Rev. 2.6 page 3 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
103
10-1
100
101
102
103
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
10-2
10-1
100
101
ZthJC [K/W]
tp [s]
0
25
50
75
100
125
150
0 50 100 150 200
Ptot [W]
TC [°C]
0
20
40
60
80
100
0 50 100 150 200
ID [A]
TC [°C]
Rev. 2.6 page 4 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
6 V
7.5 V
10 V
0
3
6
9
12
15
18
0 20 40 60 80 100
RDS(on) [mW]
ID [A]
25 °C
175 °C
0
50
100
150
0 2 4 6 8
ID [A]
VGS [V]
0
20
40
60
80
100
120
0 40 80 120
gfs [S]
ID [A]
4.5 V
5 V
5.5 V
6 V
7.5 V
10 V
0
50
100
150
200
250
300
0 1 2 3 4 5
ID [A]
VDS [V]
Rev. 2.6 page 5 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=73 A; VGS=10 V; TO 220 VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
10
12
14
16
18
20
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
75 µA
750 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
104
0 20 40 60 80
C [pF]
VDS [V]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF [A]
VSD [V]
Rev. 2.6 page 6 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=73 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
20 V
50 V
80 V
0
2
4
6
8
10
0 10 20 30 40 50
VGS [V]
Qgate [nC]
90
95
100
105
110
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
150 °C
1
10
100
1 10 100 1000
IAS [A]
tAV [µs]
Rev. 2.6 page 7 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
PG-TO220-3: Outline
Rev. 2.6 page 8 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
PG-TO262-3
Rev. 2.6 page 9 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
PG-TO-263 (D²-Pak)
Rev. 2.6 page 10 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
PG-TO-252 (D-Pak)
Rev. 2.6 page 11 2013-07-09
IPP086N10N3 G IPI086N10N3 G
IPB083N10N3 G IPD082N10N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
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Rev. 2.6 page 12 2013-07-09
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