16M-bit Consumer FCRAMTM for SiP New products 16M-bit Consumer FCRAM TM for SiP MB81ES171625-12/15 (x16-bit) MB81ES171625-12/15-X (x16-bit ; Extended Temp.Version) MB81ES173225-12/15 (x32-bit) MB81ES173225-12/15-X (x32-bit ; Extended Temp.Version) The 16M-bit Consumer FCRAMTM with SDRAM interface has been developed exclusively for the system-in-a-package (SiP). Compared to conventional SDRAMs, the FCRAMTM core technology opens up the way to wider bandwidths and lower power consumption. The device technology is ideal for image processing systems and other consumer products. Product Overview The large-density image processing capabilities of the newest video cameras, DVD recorders, and other appliances used in today's digital network information society all depend on DRAMs. To promote the evolution of these devices, FUJITSU has developed a 16M-bit Consumer FCRAM to be used exclusively for the system-in-a-package (SiP). A direct connection between a logic chip and DRAM chip in a single package reduces the number of external I/O pin, allowing these two components to function as parts of the system. Operable at a maximum frequency of 85MHz, the FCRAM is optimal for use at the 81MHz band most widely used in the newest image processing systems. As an added benefit, the adoption of FCRAM core technology Photo 1 Chip 2002 No.2 FIND Vol.20 55 16M-bit Consumer FCRAMTM for SiP New products permits low-voltage (1.8V single power supply), low-powerconsumption (54mW@IDD1) operation. This product is configured with a general-purpose SDRAM interface to facilitate design and development for customers. In addition, our original burn-in simple circuit Built-In Self Test) circuit permit memory chip and BIST ( testing even after these chips are packaged as a SiP. We now offer a SiP package containing our logic chip and an FCRAM (wafer) itself. Fig.1 shows an example of a SiP configured with our logic chip and an FCRAM in a single package. Fig.1 Example of SiP Containing a Logic Chip and FCRAM in a Single Package logicchip FCRAM 500m Product Features Table 1 Main Features Typeconfiguration shows the main features of this product. Designed as a memory for exclusive use with the SiP, this product offers the following features: Table 1 MB81ES171625/MB81ES173225 Speedversion -15 I/Oconfiguration Supplyvoltage(VDDVDDQ) Clockfrequency(max.) 1.8V single power supply (VDDVDDQ1.8V0.15V) Clock(tCK) 1.65Vto1.95V 66.7MHz 85MHz CL1 30ns 23.4ns CL2 15ns /RAScycletime(tRC) SDRAM interface Lower power consumption The FCRAM core technology achieves low power consumption, 54mW@85MHz at 32-bit bus. The shortened wire connection with the logic chip decreases the output load capacitance and the output transistor size. These features reduce the power consumption of the input/output part and will help minimize the noise generated by electromagnetic interference-a recent concern in the industry. 6.0ns 6.0ns 56 FIND Vol.20 No.2 2002 7.0ns 8.0ns /RASaccesstime(tRAC) 57ns 51.9ns /CASaccesstime(tCAC) 27ns 21.9ns Accesstimefrom clock(tAC) CL1 27ns 21.9ns CL2 12ns 10.2ns Operatingcurrent(IDD1) 30mA Powerdowncurrent(IDD2PS) 1mA 5mA Self-refreshcurrent(IDD6) Operating temperature Refresh characteristics Normalproduct 0to70 Temperature extentionproduct -40to85 Normalproduct 2048cycles/16ms Temperature extentionproduct 2048cycles/4ms 9.0ns 10.0ns 11.0ns tAC2 PPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP PPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPPP 7.0ns 8.0ns 11.7ns 75ns Fig. 2 Access Time-Supply Voltage Characteristics VDDVDDQ 1.500V 1.550V 1.600V 1.650V 1.700V 1.750V 1.800V 1.850V 1.900V 1.950V 2.000V 2.050V 2.100V -12 x16x32 9.0ns 10.0ns 11.0ns tAC2 16M-bit Consumer FCRAMTM for SiP New products High data transfer rate The product design supports a data transfer rate of 340Mbyte/sec. by a single chip (x32-bit configuration). When two chips are mounted to make use of the features of the SiP, the transfer rate is doubled (680M-byte / sec.). Fig. 2 shows the access time supply voltage characteristics of this product. Fig.3 Pad Layout MB81ES171625 MB81ES173225 x32-bit x16-bit PadNo.84 Selectivity of memory density and transfer rate The x32-bit configuration, a feature not provided for conventional 16M-bit products, is suitable for image processing systems that need wider bandwidths with comparatively small densities. The use of multiple products permits the following configurations: (When two x32-bit products are mounted) 256 K words x64 bitsx2 banks 256 K words x32 bitsx4 banks 256 K words x32 bits x2 banks x2 parts (asynchronous operation in each part) BIST circuit The BIST circuit built into this product permits memory tests after the assembly without any of the external pins. Poorly mounted memories can be rejected easily. Simple circuit for burn-in test The simple circuit for a burn-in test permits a test equivalent to the conventional burn-in test just by applying specified voltage to specific pads. WLT ( Wafer Level Test) function The WLT function permits shipment of wafers with guaranteed characteristics. Chip layout The placement of the pads at the edge permits multi-stage stack configurations of three or more chips. Fig. 3 shows the pad layout in the MB81ES171625 and MB81ES173225. NOTES *1: Consumer FCRAM : A high performance RAM which consists of an FCRAM core with SDRAM interface. C ycle R AM) is a trademark of FUJITSU *2: FCRAM ( F ast LIMITED. PadNo.1 2002 DSE BME TBST DQC VSS VDD VSS VDD DQ8 DQ9 DQ10 DQ11 VDDQ VSSQ DQ12 DQ13 DQ14 DQ15 DQM1 A12 A11 BA A10 AP A9 A8 A7 A6 CLK CKE VSSQ S16 VDDQ XCS XRAS XCAS XWE A5 A4 A3 A2 A1 A0 DQM0 DQ7 DQ6 DQ5 DQ4 VSSQ VDDQ DQ3 DQ2 DQ1 DQ0 VDD VSS VDD VSS No.2 DSE BME TBST DQC DQ16 DQ17 DQ18 DQ19 VDDQ VSSQ DQ20 DQ21 DQ22 DQ23 VSS VDD VSS VDD DQ24 DQ25 DQ26 DQ27 VDDQ VSSQ DQ28 DQ29 DQ30 DQ31 DQM2 DQM3 A12 A11 BA A10 AP A9 A8 A7 A6 CLK CKE VSSQ S32 VDDQ XCS XRAS XCAS XWE A5 A4 A3 A2 A1 A0 DQM1 DQM0 DQ15 DQ14 DQ13 DQ12 VSSQ VDDQ DQ11 DQ10 DQ9 DQ8 VDD VSS VDD VSS DQ7 DQ6 DQ5 DQ4 VSSQ VDDQ DQ3 DQ2 DQ1 DQ0 FIND Vol.20 57