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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDN5618P 60V P-Channel Logic Level PowerTrench MOSFET General Description Features This 60V P-Channel MOSFET uses Fairchild's high voltage PowerTrench process. It has been optimized for power management applications. * -1.25 A, -60 V. RDS(ON) = 0.170 @ VGS = -10 V RDS(ON) = 0.230 @ VGS = -4.5 V Applications * Fast switching speed * DC-DC converters * High performance trench technology for extremely low RDS(ON) * Load switch * Power management D D S TM SuperSOT -3 Absolute Maximum Ratings Symbol S G G TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter -60 V VGSS Gate-Source Voltage 20 V ID Drain Current -1.25 A - Continuous (Note 1a) - Pulsed -10 Maximum Power Dissipation PD TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 W -55 to +150 C (Note 1a) 250 C/W (Note 1) 75 C/W Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient RJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 618 FDN5618P 7'' 8mm 3000 units 2000 Fairchild Semiconductor Corporation FDN5618P Rev C(W) FDN5618P October 2000 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units -58 mV/C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 A BVDSS ===TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 A,Referenced to 25C VDS = -48 V, VGS = 0 V -1 A IGSSF Gate-Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage, Reverse VGS = -20 V VDS = 0 V -100 nA On Characteristics -60 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A VGS(th) ===TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = -250 A,Referenced to 25C 4 Static Drain-Source On-Resistance 0.148 0.185 0.245 ID(on) On-State Drain Current VGS = -10 V, ID = -1.25 A VGS = -4.5 V, ID = -1.0 A VGS = -10 V, ID = -3 A TJ=125C VGS = -10 V, VDS = -5 V gFS Forward Transconductance VDS = -5 V, ID = -1.25 A 4.3 VDS = -30 V, f = 1.0 MHz V GS = 0 V, 430 pF 52 pF 19 pF -1 -1.6 -3 V mV/C 0.170 0.230 0.315 -5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -30 V, VGS = -10 V, VDS = -30 V, VGS = -10 V ID = -1 A, RGEN = 6 ID = -1.25 A, 6.5 13 ns 8 16 ns 16.5 30 ns 4 8 ns 8.6 13.8 nC 1.5 nC 1.3 nC Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -0.42 Voltage (Note 2) -0.7 -0.42 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width =300 s, Duty Cycle =2.0 FDN5618P Rev C(W) FDN5618P Electrical Characteristics FDN5618P Typical Characteristics 5 2.2 VGS = -10V 2 -6.0V 4 -4.5V VGS = -3.0V -4.0V -3.5V 1.8 -3.0V 3 1.6 -3.5V 1.4 2 -4.0V -4.5V 1.2 1 -2.5V -6.0V -10V 1 0.8 0 0 1 2 3 0 4 1 2 3 4 5 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.6 1.3 ID = -1.25A VGS = -10V ID = -0.65 A 1.2 0.5 1.1 0.4 1 0.3 0.9 0.2 o TA = 125 C o TA = 25 C 0.8 -50 -25 0 25 50 75 100 125 150 0.1 2 4 o TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. 10 10 VGS = 0V o o 25 C TA = 125 C 5 8 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 6 VDS = - 5V 6 -VGS, GATE TO SOURCE VOLTAGE (V) 1 o -55 C 4 o TA = 125 C 0.1 o 25 C 3 o -55 C 0.01 2 0.001 1 0.0001 0 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN5618P Rev C(W) FDN5618P Typical Characteristics 10 700 VDS = -20V ID = -1.25A 8 f = 1MHz VGS = 0 V 600 -30V -40V 500 6 CISS 400 300 4 200 2 COSS 100 CRSS 0 0 0 2 4 6 8 10 0 2 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 6 8 10 20 10 12 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) RDS(ON) LIMIT 1ms SINGLE PULSE RJA = 270C/W TA = 25C 15 10ms 1 100ms 0.1 DC VGS =-10V SINGLE PULSE RJA = 270oC/W 0.01 10s 10 1s 5 o TA = 25 C 0 0.001 0.1 1 10 100 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. 1 1 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. D = 0.5 RJA(t) = r(t) + RJA 0.2 0.1 0.1 10 t1, TIME (sec) RJA = 270 C/W 0.05 0.02 P(pk) 0.01 t1 t2 0.01 SINGLE PULSE TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDN5618P Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. 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