To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. April 1, 2003 Cautions Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corporation product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corporation or a third party. 2. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial ADE-208-1080A (Z) 2nd. Edition Mar. 2001 Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 Note: Marking for 2SC3127 is "ID-". 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SC3127* 1 2SC3128 2SC3510 Unit Collector to base voltage VCBO 20 20 20 V Collector to emitter voltage VCEO 12 12 12 V Emitter to base voltage VEBO 3 3 3 V Collector current IC 50 50 50 mA Collector power dissipation PC 150 350 600 mW Junction temperature Tj 150 150 150 C Storage temperature Tstg -55 to +150 -55 to +150 -55 to +150 C 2 2SC3127, 2SC3128, 2SC3510 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 20 -- -- V I C = 10 A, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 12 -- -- V I C = 1 mA, RBE = Emitter cutoff current I EBO -- -- 10 A VEB = 3 V, IC = 0 Collector cutoff current I CBO -- -- 0.5 A VCB = 12 V, IE = 0 DC current transfer ratio hFE 30 90 200 Collector output capacitance Cob -- 0.9 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product fT 3.5 4.5 -- GHz VCE = 5 V, IC = 20 mA Power gain PG -- 10.5 -- dB VCE = 5 V, IC = 20 mA, f = 900 MHz Noise figure NF -- 2.2 -- dB VCE = 5 V, IC = 5 mA, f = 900 MHz DC Current Transfer Ratio vs. Collector Current 200 600 DC Current Transfer Ratio hFE Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 2SC3510 400 2SC3128 200 2SC3127 VCE = 5 V, IC = 20 mA VCE = 5 V 160 120 80 40 0 0 50 100 150 Ambient Temperature Ta (C) 200 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SC3127, 2SC3128, 2SC3510 Collector Output Capacitance vs. Collector to Base Voltage Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) Gain Bandwidth Product fT (GHz) 5.0 4.0 3.0 2.0 VCE = 5 V f = 500 MHz 1.0 0 1 2 5 10 20 Collector Current IC (mA) 2.0 1.6 f = 1 MHz IE = 0 1.2 0.8 0.4 0 1 50 2 5 10 20 50 Collector to Base Voltage VCB (V) 2.0 20 f = 1 MHz Emitter Common 1.6 1.2 0.8 0.4 0 16 PG 12 VCE = 5 V f = 500 MHz 8 NF 4 0 1 4 Power Gain and Noise Figure vs. Collector Current Power Gain PG (dB) Noise Figure NF (dB) Reverse Transfer Capacitance Cre (pF) Reverse Transfer Capacitance vs. Collector to Base Voltage 2 5 10 20 50 Collector to Base Voltage VCB (V) 0 10 20 30 40 Collector Current IC (mA) 50 2SC3127, 2SC3128, 2SC3510 Power Gain and Noise Figure vs. Collector Current 2nd I.M. Distortion vs. Collector Current 70 10 2nd I.M. Distortion 2nd I.M.D. (dB) Power Gain PG (dB) Noise Figure NF (dB) 12 PG VCE = 5 V f = 900 MHz 8 6 NF 4 2 10 20 30 40 Collector Current IC (mA) VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dB f2nd = 410 MHz 30 0 60 50 VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dB f2nd = 1,250 MHz 10 20 30 40 Collector Current IC (mA) 50 3rd I.M. Distortion vs. Collector Current 80 3rd I.M. Distortion 3rd I.M.D. (dB) 2nd I.M. Distortion 2nd I.M.D. (dB) 40 50 2nd I.M. Distortion vs. Collector Current 70 30 50 20 0 40 60 f = 190 MHz 70 f = 220 MHz 60 50 VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dB f3rd = 190 MHz, 220 MHz 40 30 20 0 10 20 30 40 Collector Current IC (mA) 50 0 10 20 30 40 Collector Current IC (mA) 50 5 2SC3127, 2SC3128, 2SC3510 3rd I.M. Distortion vs. Collector Current 3rd I.M. Distortion 3rd I.M.D. (dB) 70 f = 550 MHz 60 f = 700 MHz 50 40 VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dB f3rd = 550 MHz, 700 MHz 30 20 0 10 20 30 40 Collector Current IC (mA) 50 Noise Figure vs. Frequency 10 Noise Figure NF (dB) VCC = 12 V IC = 20 mA 8 Post AMP. NF 6 2 0 400 6 NF 4 500 600 700 Frequency f (MHz) 800 900 2SC3127, 2SC3128, 2SC3510 Power Gain vs. Frequency Power Gain PG (dB) 10 8 VCC = 12 V, IC = 20 mA Input Power Level -50 dBm 6 4 2 0 250 500 Frequency f (MHz) 750 1,000 Power Gain vs. Frequency Power Gain PG (dB) 10 8 IC = 30 mA 6 IC = 20 mA 4 VCC = 12 V Input Power Level -50 dBm IC = 10 mA IC = 5 mA 2 0 250 500 Frequency f (MHz) 750 1,000 7 2SC3127, 2SC3128, 2SC3510 Input and Output Reflection Coefficient S11&S22 (dB) Input and Output Reflection Coefficient vs. Frequency 0 S22 -5 S11 -10 -15 VCC = 12 V, IC = 20 mA Input Power Level -50 dBm -20 0 250 500 Frequency f (MHz) 750 1,000 Vhf to Uhf Wide Band Amp. Circuit 50 p Input 50 p 50 p 470 5p Rg = 50 T1 L1 L2 1,200 p 110 2.4 k RL = 50 1.2 p 4,400 p 4,400 p 2,200 p VBB Parts Spcecification L1 : Inside dia 3.0 mm, 0.4 mm Polyurethane Coated Copper wire 12 Turns. L2 : Inside dia 3.5 mm, 0.5 mm Polyurethane Coated Copper wire 9 Turns. T1 : Balance wind used Ferrite Core Outside dia 4.0 mm, Inside dia 2.0 mm 0.1 mm Polyurethane Coated Copper wire 3 Turns. Ratio Input to Output is 2 : 1 8 Output VCC 2.5 p Unit R : C:F 2SC3127, 2SC3128, 2SC3510 Package Dimensions As of January, 2001 0.65 Unit: mm 0.95 0.95 1.9 0.2 + 0.10 0 - 0.1 2.8 + 0.2 - 0.6 0.16 - 0.06 0.65 1.5 0.15 0.10 0.4 +- 0.05 + 0.2 1.1 - 0.1 0.3 2.95 0.2 Hitachi Code JEDEC EIAJ Mass (reference value) MPAK -- Conforms 0.011 g 9 2SC3127, 2SC3128, 2SC3510 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 10