Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but th ere is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regar ding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
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third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
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Please also pay attention to information published by Renesas Technology Corporation by various
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contained therein.
2SC3127, 2SC3128, 2SC3510
Silicon NPN Epitaxial
ADE-208-1080A (Z)
2nd. Edition
Mar. 2001
Application
UHF/VHF wide band amplifier
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK 2SC3127
Note: Marking for 2SC3127 is “ID–”.
2SC3127, 2SC3128, 2SC3510
2
1. Base
2. Emitter
3. Collector
TO-92 (2) 2SC3128, 2SC3510
321
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SC3127*12SC3128 2SC3510 Unit
Collector to base voltage VCBO 20 20 20 V
Collector to emitter voltage VCEO 12 12 12 V
Emitter to base voltage VEBO 333V
Collector current IC50 50 50 mA
Collector power dissipation PC150 350 600 mW
Junction temperature Tj 150 150 150 °C
Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 °C
2SC3127, 2SC3128, 2SC3510
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO 20——V I
C = 10 µA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO 12——V I
C = 1 mA, RBE =
Emitter cutoff current IEBO — — 10 µA VEB = 3 V, IC = 0
Collector cutoff current ICBO — — 0.5 µA VCB = 12 V, IE = 0
DC current transfer ratio hFE 30 90 200 VCE = 5 V, IC = 20 mA
Collector output capacitance Cob — 0.9 1.5 pF VCB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product fT3.5 4.5 — GHz VCE = 5 V, IC = 20 mA
Power gain PG — 10.5 — dB VCE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure NF — 2.2 — dB VCE = 5 V, IC = 5 mA,
f = 900 MHz
Maximum Collector Dissipation Curve
600
400
200
0 50 100 150 200
Ambient Temperature Ta (°C)
Collector Power Dissipation Pc (mW)
2SC3510
2SC3128
2SC3127
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
1 2 5 10 20 50 100
0
40
80
120
160
200
DC Current Transfer Ratio hFE
VCE = 5 V
2SC3127, 2SC3128, 2SC3510
4
Gain Bandwidth Product vs.
Collector Current
0
1.0
2.0
3.0
4.0
5.0
Collector Current IC (mA)
Gain Bandwidth Product fT (GHz)
12 51020 50
VCE = 5 V
f = 500 MHz
Collector Output Capacitance vs.
Collector to Base Voltage
Collector Output Capacitance Cob (pF)
Collector to Base Voltage VCB (V)
0
0.4
0.8
1.2
1.6
2.0
12 51020 50
f = 1 MHz
IE = 0
Reverse Transfer Capacitance Cre (pF)
Collector to Base Voltage VCB (V)
0
0.4
0.8
1.2
1.6
2.0
12 51020 50
Reverse Transfer Capacitance vs.
Collector to Base Voltage
f = 1 MHz
Emitter Common
Power Gain and Noise Figure vs.
Collector Current
Power Gain PG (dB)
Noise Figure NF (dB)
Collector Current IC (mA)
0
4
8
12
16
20
0 1020304050
VCE = 5 V
f = 500 MHz
PG
NF
2SC3127, 2SC3128, 2SC3510
5
Power Gain and Noise Figure vs.
Collector Current
Power Gain PG (dB)
Noise Figure NF (dB)
Collector Current IC (mA)
2
4
6
8
10
12
0 1020304050
VCE = 5 V
f = 900 MHz
PG
NF
2nd I.M. Distortion 2nd I.M.D. (dB)
Collector Current IC (mA)
20
30
40
50
60
70
0 1020304050
2nd I.M. Distortion vs. Collector Current
VCC = 12 V
f1 = 210 MHz, f2 = 200 MHz
Vout = 100 dBµ
f2nd = 410 MHz
2nd I.M. Distortion 2nd I.M.D. (dB)
Collector Current IC (mA)
20
30
40
50
60
70
0 1020304050
2nd I.M. Distortion vs. Collector Current
VCC = 12 V
f1 = 600 MHz, f2 = 650 MHz
Vout = 100 dBµ
f2nd = 1,250 MHz
3rd I.M. Distortion 3rd I.M.D. (dB)
Collector Current IC (mA)
30
40
50
60
70
80
0 1020304050
3rd I.M. Distortion vs. Collector Current
VCC = 12 V
f1 = 210 MHz, f2 = 200 MHz
Vout = 100 dBµ
f3rd = 190 MHz, 220 MHz
f = 190 MHz
f = 220 MHz
2SC3127, 2SC3128, 2SC3510
6
3rd I.M. Distortion 3rd I.M.D. (dB)
Collector Current IC (mA)
20
30
40
50
60
70
0 1020304050
3rd I.M. Distortion vs. Collector Current
VCC = 12 V
f1 = 600 MHz, f2 = 650 MHz
Vout = 100 dBµ
f3rd = 550 MHz, 700 MHz
f = 550 MHz
f = 700 MHz
Noise Figure vs. Frequency
Noise Figure NF (dB)
Frequency f (MHz)
0
2
4
6
8
10
400 500 600 700 800 900
NF
Post AMP. NF
VCC = 12 V
IC = 20 mA
2SC3127, 2SC3128, 2SC3510
7
Power Gain vs. Frequency
Power Gain PG (dB)
Frequency f (MHz)
0
2
4
6
8
10
1,000750500250
VCC = 12 V, IC = 20 mA
Input Power Level
–50 dBm
Power Gain vs. Frequency
Power Gain PG (dB)
Frequency f (MHz)
0
2
4
6
8
10
1,000750500250
VCC = 12 V
Input Power Level
–50 dBm
IC = 30 mA
IC = 20 mA
IC = 10 mA
IC = 5 mA
2SC3127, 2SC3128, 2SC3510
8
Input and Output Reflection Coefficient vs. Frequency
Input and Output Reflection Coefficient
S11&S22 (dB)
Frequency f (MHz)
–20
–10
0
–15
1,0007505002500
–5
VCC = 12 V, IC = 20 mA
Input Power Level
–50 dBm
S22
S11
Vhf to Uhf Wide Band Amp. Circuit
47050 p
50 p
2.4 k
50 p 5 p
1,200 p Output
Input
Rg = 50 Ω
L1L2
T1
RL = 50 Ω
1.2 p
4,400 p 4,400 p
2,200 p
110
VBB VCC
2.5 p
Unit R : Ω
C : F
Parts Spcecification
L1 : Inside dia φ3.0 mm, φ0.4 mm Polyurethane Coated Copper wire 12 Turns.
L2 : Inside dia φ3.5 mm, φ0.5 mm Polyurethane Coated Copper wire 9 Turns.
T1 : Balance wind used Ferrite Core
Outside dia φ4.0 mm, Inside dia φ2.0 mm
φ0.1 mm Polyurethane Coated Copper wire 3 Turns.
Ratio Input to Output is 2 : 1
2SC3127, 2SC3128, 2SC3510
9
Package Dimensions
0.16
0 – 0.1
+ 0.10
– 0.06
0.4+ 0.10
– 0.05
0.95 0.95
1.9 ± 0.2
2.95 ± 0.2
2.8 + 0.2
– 0.6
0.65
1.5 ± 0.15
0.65
1.1+ 0.2
– 0.1
0.3
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
MPAK
—
Conforms
0.011 g
As of January, 2001
Unit: mm
2SC3127, 2SC3128, 2SC3510
10
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
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Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
URL NorthAmerica : http://semiconductor.hitachi.com/
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Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
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(Taipei Branch Office)
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Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
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World Finance Centre,
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Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
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Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
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Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0
