VS-ST180SPbF Series
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Phase Control Thyristors
(Stud Version), 200 A
FEATURES
• Center amplifying gate
• International standard case TO-93 (TO-209AB))
• Hermetic metal case with ceramic insulator
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IT(AV) 200 A
VDRM/VRRM 1600 V, 2000 V
VTM 1.75 V
IGT 150 mA
TJ-40 °C to +125 °C
Package TO-93 (TO-209AB)
Circuit configuration Single SCR
TO-93 (TO-209AB)
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV)
200 A
TC85 °C
IT(RMS) 314 A
ITSM
50 Hz 5000 A
60 Hz 5230
I2t50 Hz 125 kA2s
60 Hz 114
VDRM/VRRM 1600 to 2000 V
tqTypical 100 μs
TJ-40 to +125 °C
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VDRM/VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
IDRM/IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-ST180S 16 1600 1700 30
20 2000 2100
VS-ST180SPbF Series
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature IT(AV) 180° conduction, half sine wave 200 A
85 °C
Maximum RMS on-state current IT(RMS) DC at 76 °C case temperature 314
A
Maximum peak, one-cycle
non-repetitive surge current ITSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5000
t = 8.3 ms 5230
t = 10 ms 100 % VRRM
reapplied
4200
t = 8.3 ms 4400
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
125
kA2s
t = 8.3 ms 114
t = 10 ms 100 % VRRM
reapplied
88
t = 8.3 ms 81
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2s
Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.08 V
High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 1.14
Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 1.18 m
High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 1.14
Maximum on-state voltage VTM Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse 1.75 V
Maximum holding current IHTJ = TJ maximum, anode supply 12 V resistive load 600 mA
Maximum (typical) latching current IL1000 (300)
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise of
turned-on current dI/dt Gate drive 20 V, 20 , tr 1 μs
TJ = TJ maximum, anode voltage 80 % VDRM
1000 A/μs
Typical delay time td
Gate current 1 A, dIg/dt = 1 A/μs
Vd = 0.67 % VDRM, TJ = 25 °C 1.0
μs
Typical turn-off time tq
ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/μs,
VR = 50 V, dV/dt = 20 V/μs, gate 0 V 100 , tp = 500 μs 100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/μs
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied 30 mA
VS-ST180SPbF Series
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES UNITS
TYP. MAX.
Maximum peak gate power PGM TJ = TJ maximum, tp 5 ms 10 W
Maximum average gate power PG(AV) TJ = TJ maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current IGM TJ = TJ maximum, tp 5 ms 3.0 A
Maximum peak positive gate voltage + VGM TJ = TJ maximum, tp 5 ms 20 V
Maximum peak negative gate voltage - VGM 5.0
DC gate current required to trigger IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
180 -
mATJ = 25 °C 90 150
TJ = 125 °C 40 -
DC gate voltage required to trigger VGT
TJ = - 40 °C 2.9 -
VTJ = 25 °C 1.8 3.0
TJ = 125 °C 1.2 -
DC gate current not to trigger IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10 mA
DC gate voltage not to trigger VGD 0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range TJ-40 to +125 °C
Maximum storage temperature range TStg -40 to +150
Maximum thermal resistance,
junction to case RthJC DC operation 0.105
K/W
Maximum thermal resistance,
case to heatsink RthC-hs Mounting surface, smooth, flat and greased 0.04
Mounting torque, ± 10 %
Non-lubricated threads 31
(275) N · m
(lbf in)
Lubricated threads 24.5
(210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheeet TO-93 (TO-209AB)
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL
CONDUCTION
RECTANGULAR
CONDUCTION TEST CONDITIONS UNITS
180° 0.015 0.012
TJ = TJ maximum K/W
120° 0.019 0.020
90° 0.025 0.027
60° 0.036 0.037
30° 0.060 0.060
VS-ST180SPbF Series
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Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
0 40 80 120 160 200 240
Maximum Allowable Case Temperature (°C)
30° 60°
90°
120°
180°
Average On-state Current (A)
Conduction Angle
ST1 8 0 S Se r i e s
R (DC) = 0.105 K/ W
thJC
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350
DC
30° 60°
90°
120° 180°
Avera ge On-sta t e Curre nt (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
ST1 8 0 S Se r i e s
R (DC) = 0.105 K/ W
thJC
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.0
8K
/W-DeltaR
thS
A
0.1K/ W
0.16K
/W
0.2K
/W
0.3K
/W
0.4K/W
0.5K/W
0.8K
/W
1.2K/W
0
50
100
150
200
250
300
350
0 40 80 120 160 200 240
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST1 8 0 S Se r i e s
T = 1 2 5 ° C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R=0.08K
/W-DeltaR
thS
A
0.1K/W
0.16K
/W
0.2K/W
0.3K/W
0.4K
/W
0.5K
/W
0.8K/ W
1.2K
/W
0
50
100
150
200
250
300
350
400
450
500
0 40 80 120 160 200 240 280 320
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
ST180S Se rie s
T = 12 5 ° C
J
VS-ST180SPbF Series
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Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
2000
2400
2800
3200
3600
4000
4400
4800
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pea k Ha lf Sine Wave On-st ate Current (A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST1 8 0 S Se r i e s
At Any Rated Load Condition And With
Ra ted V Ap plied Following Surge.
RRM
2000
2500
3000
3500
4000
4500
5000
5500
0.01 0.1 1
Pulse Tra in Dura t ion ( s)
Versus Pulse Train Duration. Control
Peak Half Sine Wave On-state Current (A)
Initial T = 125°C
No Volta g e Rea p plied
Ra t e d V Re a p p l i e d
RRM
J
ST180S Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
T = 2 5 ° C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
ST1 8 0 S Se r i e s
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
ST1 8 0 S Se r i e s
Steady State Value
R = 0.105 K/ W
(DC Operation)
thJC
VS-ST180SPbF Series
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Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
Tj = 2 5 ° C
Tj = 1 2 5 ° C
Tj = - 4 0 ° C
(1) (2) (3)
In st a n t a n e o u s G a t e C u r r e n t ( A )
Instantaneous Gate Voltage (V)
Rectangular gate pulse
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 µs
tr<=1 µs
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
D e v i c e : ST1 8 0 S Se r i e s
(4)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95082
- Thyristor
2
- Essential part number
3
- 0 = converter grade
4
9
- None = standard production
- PbF = lead (Pb)-free
- S = compression bonding stud
8
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- P = stud base 3/4"-16UNF2A threads
7
- 0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
Note: For metric device M16 x 1.5 contact factory
Device code
5
132 4 6 7 8 9
STVS- 18 0 S 20 P 0 PbF
1
- Vishay Semiconductors product
Outline Dimensions
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TO-209AB (TO-93)
DIMENSIONS in millimeters (inches)
Note
(1) For metric device: M16 x 1.5 - length 21 (0.83) maximum
Fast-on terminals
White shrink
Red shrink
Red cathode
Red silicon rubber
210 (8.26) ± 10 (0.39)
C.S. 0.4 mm2
(0.0006 s.i.)
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
38.5 (1.52)
MAX.
16 (0.63) MAX.
8.5 (0.33) DIA.
Glass metal seal
28.5 (1.12) MAX. DIA.
220 (8.66) ± 10 (0.39)
SW 32
C.S. 25 mm2
(0.039 s.i.)
Flexible leads
4 (0.16) MAX.
35 (1.38) MAX.
3/4"-16UNF-2A (1)
27.5 (1.08) MAX.
White gate
White shrink
Red shrink
Red cathode
Red silicon rubber
210 (8.26) ± 10 (0.39)
C.S. 0.4 mm2
(0.006 s.i.)
38.5 (1.52)
MAX.
220 (8.66) ± 10 (0.39)
Ceramic housing
90 (3.54) MIN.
4.3 (0.17) DIA.
19 (0.75) MAX.
8.5 (0.33) DIA.
35 (1.38) MAX.
3/4"-16UNF-2A (1)
27.5 (1.08) MAX. SW 32
27.5 (1.08) MAX. DIA.
White gate
16 (0.63) MAX.
AMP. 280000-1
REF-250
9.5 (0.37) MIN.
22 (0.86) MIN.
C.S. 25 mm2
(0.039 s.i.)
Flexible leads
4 (0.16) MAX.
9.5 (0.37) MIN.
22 (0.86) MIN.
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