BAT54LT1G - ON SEMICONDUCTOR - Datasheet.Directory

December, 2014 − Rev. 13 Publication Order Number:

BAT54LT1/D

BAT54L

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

•Extremely Fast Switching Speed

•Low Forward Voltage − 0.35 Volts (Typ) @ IF = 10 mAdc

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant*

MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)

Rating Symbol Value Unit

Reverse Voltage VR30 Volts

Forward Power Dissipation

@ TA = 25°C

Derate above 25°C

PF200

2.0 mW

mW/°C

Forward Current (DC) IF200 Max mA

Non−Repetitive Peak Forward Current

tp < 10 msec IFSM 600 mA

Repetitive Peak Forward Current

Pulse Wave = 1 sec,

Duty Cycle = 66%

IFRM 300 mA

Junction Temperature TJ−55 to +125 °C

Storage Temperature Range Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

30 VOLTS

SILICON HOT−CARRIER

DETECTOR AND SWITCHING

DIODES

MARKING DIAGRAM

CATHODE 1

ANODE

SOT−23 (TO−236)

CASE 318

STYLE 8

(Note: Microdot may be in either location)

Device Package Shipping†

ORDERING INFORMATION

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

BAT54LT1G SOT−23

(Pb−Free) 3,000 /

Tape & Reel

www.onsemi.com

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

JV3 = Device Code

M = Date Code

G= Pb−Free Package

JV3 M G

NSVBAT54LT1G SOT−23

(Pb−Free) 3,000 /

Tape & Reel

BAT54L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 μA) V(BR)R 30 − − Volts

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz) CT− 7.6 10 pF

Reverse Leakage

(VR = 25 V) IR− 0.5 2.0 μAdc

Forward Voltage

(IF = 0.1 mA)

(IF = 1.0 mA)

(IF = 10 mA)

(IF = 30 mA)

(IF = 100 mA)

VF−

−

0.22

0.29

0.35

0.41

0.52

0.24

0.32

0.40

0.50

0.80

Reverse Recovery Time

(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1) trr − − 5.0 ns

Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.

Notes: 3. tp » trr

+10 V 2 k

820

0.1 μF

DUT

100 μH0.1 μF

50 Ω OUTPUT

PULSE

GENERATOR

50 Ω INPUT

SAMPLING

OSCILLOSCOPE

trtpT

10%

90%

trr T

iR(REC) = 1 mA

OUTPUT PULSE

(IF = IR = 10 mA; measure

at iR(REC) = 1 mA)

INPUT SIGNAL

Figure 1. Recovery Time Equivalent Test Circuit

BAT54L

www.onsemi.com

CT, TOATAL CAPACITANCE (pF)

100

0.0 0.1VF, FORWARD VOLTAGE (VOLTS)

0.2 0.3 0.4 0.5

1.0

0.1

85°C

VR, REVERSE VOLTAGE (VOLTS)

0.1

0.01 51015 20 25

0VR, REVERSE VOLTAGE (VOLTS)

051015 30

Figure 2. Forward Voltage

Figure 3. Leakage Current

Figure 4. Total Capacitance

−40°C

25°C

TA = 150°C

TA = 125°C

TA = 85°C

TA = 25°C

0.6

−55°C

150°C

125°C

100

1000

2520

IR, REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA)

BAT54L

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

STYLE 8:

PIN 1. ANODE

2. NO CONNECTION

3. CATHODE

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.029

0 −−− 10 0 −−− 10

q°°°°

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