ir SGS-THOMSON IRFP450/Fl 7H MICROELECTRONICS ___IRFP451/Fl N - CHANNEL ENHANCEMENT MODE ROWER MOS TRANSISTORS ferro T Voss | Rosion) | lo / IRFP450 500 V 0.40 14A IRFP45ori | s00v_ | 042 | 9A wareasiri | as0v | osu | 9A AVALANCHE RUGGEDNESS TECHNOLOGY = 100% AVALANCHE TESTED e REPETITIVE AVALANCHE DATA AT 100C APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) TO-218 ISOWATT218 CHOPPER REGULATORS, CONVERTERS, MOTOR CONTROL, LIGHTING FOR i. INDUSTRIAL AND CONSUMER ENVIRONMENT [qacnnal eoneuari piacnaw | INTERNAL SCHEMATIC DIAGRAM D (2) Oo Td ABSOLUTE MAXIMUM RATINGS pen ee Parameter La Value eo Unit IRFP a50FI 45 500 500 Drain-source Voltage (Ves = = 0) Vor |Drain- gate Voltage (Ras = 20 kQ) |Gate-source Voltage - , +20 Vv |Drain Current (cont.) at Te = 25 C 14 14 9 9 A Drain Current (cont) atT= 100C | ee | 88 | 66 +2444 lom(*) | | Drain Current (pulsed) 56 __ 56 56 | 56 A Prot | Total Dissipation at Tc = 25 C 180 70 Ww |Derating Factor _ 1.44 0.56 WiC c | Storage Temperature -65 to 150 . Tj Max. Operating Junction Temperature 150 ({*)} Pulse width limited by safe operating area April 1992 7IRFP 450/FI - 451/FI - 452/F1 - 453/Fl THERMAL DATA TO-218 ISOWATT218 Rthj-case |Thermal Resistance Junction-case Max 0.69 1.78 C/W Rinj-amp |Thermal Resistance Junction-ambient Max 30 C/W Rithe-s Thermal Resistance Case-sink Typ 0.1 C/W Ti Maximum Lead Temperature For Soldering Purpose 300 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lar Avalanche Current, Repetitive or Not-Repetitive 14 A (pulse width limited by Tj max, 8 < 1%) Eas Single Pulse Avalanche Energy 760 md (starting T; = 25 C, lp = lan, Von = 50 V) Eaa Repetitive Avalanche Energy 18 md (pulse width limited by Tj max, 8 < 1%) lar Avalanche Current, Repetitive or Not-Repetitive 8 A (T. = 100 C, pulse width limited by T; max, & < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Vierjoss | Drain-source Ip = 250 yA Ves = 0 Breakdown Voltage for IRFP450/450F1 500 Vv for IRFP451/451FI 450 Vv loss Zero Gate Voltage Vos = Max Rating 250 HA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 T, = 125 C 1000 HA less Gate-body Leakage Vas =+20V + 100 nA | Current (Vps = 0) \ ON (*) Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit | Vesith) |Gate Threshold Voltage |Vps = Vas Jp = 250 pA 2 4 Vv Ros(on} |Static Drain-source On |Vas=10V Ip=7.9A 0.4 Q Resistance Ip(on) =| On State Drain Current |Vos > Ion) X Rosion)max Vas = 10 V 14 A DYNAMIC Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit Qts (*) | Forward Vos > Ipion) X Rosconymax Ip = 7.9A 6 Ss Transconductance Ciss Input Capacitance Vos=25V f=1MHz Ves =0 3000 pF Coss Output Capacitance 400 pF Criss Reverse Transfer : 2006 pF Capacitance 2/7 Ky SGS-THOMSON T7 MicnorLectRomcs 280IRFP 450/FI - 451/Fl - 452/FI - 453/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING RESISTIVE LOAD [Symbol Parameter Test Conditions Min. | Typ. | Max. | Unit taton) Turn-on Time Von =210V Ip=7A 70 ns tr Rise Time Rie 4.70 80 ns tacoft) Turn-off Delay Time (see test circuit) 155 ns tt Fail Time 55 ns Qg Total Gate Charge IDb=13A Veg =10V 145 170 nc iVop = Max Rating x 0.8 | ; (see test circuit) | SOURCE DRAIN DIODE Symbol Parameter | Test Conditions Min. Typ. Max. Unit | + v Ta Isp Source-drain Current 14 A Isom(*) |Source-drain Current 56 A (pulsed) | Vsp (*} |Forward On Voltage Isp = 14A Ves=0 1.4 Vv ter Reverse Recovery Isp = 14 A di/dt = 100 A/us 700 ns Time Von = 100 VT) = 150C Qr Reverse Recovery 16.8 pc Charge | | | t (*) Pulsed: Pulse duration = 300 js, duty cycle 1.5 % {) Pulse width limited by safe operating area Safe Operating Area for TO-218 Package Safe Operating Area for ISOWATT218 Package Ip(A) 10? 10 ee 10' 102 Ip(A} 10? 107% 10? 103 Vag (V) 10 a ky SGS-THOMSON MICROELECTROMICS IRFP451 10 10? 100ps tms 10ms 100ms 1s D.C. IRFP450F| 105 Vys (V) 3/7 281IRFP 450/FI - 451/Fl - 452/F1 : 453/F I Thermal Impedance for ISOWATT218 PackageIRFP 450/Fi - 451/Fl - 452/Fl - 453/Fl Transfer Characteristics Ip (AY 40 30 20 8 Vos (V) Static Drain-source On Resistance Gc1agio Ros(on) Gy Ad 0.6 Q.5 0.4 0.3 Q 20 40 60 1pfA) Gate Charge vs Gate-source Voltage Ves (V) 10 Vos =400V 0 40 BO 120 160 Qg(nC} Si SGS-THOMSON _.- MICROELECTRONICS Transconductance aS 16 Vos >to(on} x as(en)rax 0 5 10 15 20 1,(A) Maximum Drain Current vs Temperature Ip fA) 14 12 0 50 100 Te (%C) Capacitance Variations GC33670 C(pF) 3200 2400 1600 800 0 10 20 30 40IRFP 450/FI - 451/Fl - 452/Fl - 453/F 1 Normalized Breakdown Voltage vs Temperature GC33681 Viaryoss (norm) 1.15 1.05 0.95 Veg = OV 0. 8S Ip =250UA 0.75 -40 0 40 80 120 7, (c) Source-drain Diode Forward Characteristics tsp (A) Unclamped Inductive Load Test Circuit Normalized On Resistance vs Temperature Ros(on) (norm) 2.2 1.8 0.6 0.2 Unclamped Inductive Waveforms 6021040 V(aR)pss L Yo o--4 2200 | 3.3 o uF P Yoo mks 'p o 4 Mi | | ie, D.U.T. I | Pw _ scos370 6/7 7g SGS-THOMSON YF wicnorrcrronies 284IRFP 450/Fl - 451/Fl - 452/Fl - 453/Ft Switching Time Test Circuit Gate Charge Test Circuit Vp V2v 47Kn 4 = J 1K9 T 100nF Ry 2200 | 3.3 HE uF Voo r Vp Vi, =20V=Veyax (OCONST tooo SL pus Ves R bd aade | _ s D.U.T. Ve en) Py = scossga SOL ae Pw scosoae 77 ky SGS-THOMSON 7 tcromecrnomes 285