UTC BC846/BC847/BC848/BC849/BC850
NPN EPITAXIAL SILICON TRANSISTOR
UTC UNISONIC TECHNOLOGIES CO. LTD 2
QW-R220-002,A
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current ICBO VCB=30V, IE=0 15 nA
DC Current Gain hFE VCE=5.0V, Ic=2.0mA 110 800
Collector-Emitter Saturation
Voltage VCE(sat) Ic=10mA, IB=0.5mA
Ic=100mA, IB=5.0mA
90
200
250
600 mV
Collector-Base Saturation Voltage VBE(sat) Ic=10mA, IB=0.5mA
Ic=100mA, IB=5.0mA
700
900
mV
Base-Emitter On Voltage VBE(on) VCE=5.0V, Ic=2.0mA
VCE=5.0V, Ic=10mA
580 660 700
720 mV
Current Gain Bandwidth Product fT VCE=5.0V, Ic=10mA, f=100MHz 300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 3.5 6 pF
Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz 9 pF
Noise Figure:
BC846/BC847/BC848
BC849/BC850
BC849
BC850
NF
VCE=5V, Ic=200µA,
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA,
RG=2KΩ, f=30 ~ 15000Hz
2
1.2
1.4
1.4
10
4
4
3
dB
Classification of hFE
RANK A B C
RANGE 110-220 200-450 420-800
Marking Code
P/N RANK MARK RANK MARK RANK MARK
BC846 A 8AA B 8AB C 8AC
BC847 A 8BA B 8BB C 8BC
BC848 A 8CA B 8CB C 8CC
BC849 A 8DA B 8DB C 8DC
BC850 A 8EA B 8EB C 8EC