BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
1
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BDW63, BDW63A, BDW63B, BDW63C and
BDW63D
●60 W at 25°C Case Temperature
●6 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 2 A
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.48 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
VCBO
-45
-60
-80
-100
-120
V
Collector-emitter voltage (IB = 0) (see Note 1)
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
VCEO
-45
-60
-80
-100
-120
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-6 A
Continuous base current IB-0.1 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 60 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Unclamped inductive load energy (see Note 4) ½LIC250 mJ
Operating junction temperature range Tj-65 to +150 °C
Operating temperature range Tstg -65 to +150 °C
Operating free-air temperature range TA-65 to +150 °C
This series is obsolete and
not recommended for new designs.
OBSOLETE
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
2
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA IB = 0 (see Note 5)
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
-45
-60
-80
-100
-120
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
IB=0
IB=0
IB=0
IB=0
IB=0
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
-0.5
-0.5
-0.5
-0.5
-0.5
mA
ICBO
Collector cut-off
current
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -45 V
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
-0.2
-0.2
-0.2
-0.2
-0.2
-5
-5
-5
-5
-5
mA
IEBO
Emitter cut-off
current VEB = -5 V IC=0 -2 mA
hFE
Forward current
transfer ratio
VCE = -3 V
VCE = -3 V
IC=-2 A
IC=-6 A (see Notes 5 and 6) 750
100
20000
VBE(on)
Base-emitter
voltage VCE = -3 V IC= -2 A (see Notes 5 and 6) -2.5 V
VCE(sat)
Collector-emitter
saturation voltage
IB = -12 mA
IB = -60 mA
IC= -2 A
IC=-6 A (see Notes 5 and 6) -2.5
-4 V
VEC
Parallel diode
forward voltage IE = -6 A IB = 0 -3.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.08 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER TEST CONDITIONS †MIN TYP MAX UNIT
ton Tu r n -o n t i m e I C = -3 A
VBE(off) = 4.5 V
IB(on) = -12 mA
RL = 10 Ω
IB(off) = 12 mA
tp = 20 µs, dc ≤ 2%
1µs
toff Turn-off time 5µs
OBSOLETE
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
3
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
hFE - Typical DC Current Gain
40000
100
1000
10000
TCS125AD
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
0
TCS125AE
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·0
-2·5
-1·0
-1·5
-0·5
TCS125AF
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
OBSOLETE
BDW64, BDW64A, BDW64B, BDW64C, BDW64D
PNP SILICON POWER DARLINGTONS
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0·1
-1·0
-10 SAS125AC
BDW64
BDW64A
BDW64B
BDW64C
BDW64D
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS120AB
OBSOLETE
