Document No. D16118EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SA1010
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
DATA SHEET
©2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
The 2SA1010 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use as a driver in
devices such as switching regulators, DC/DC converters, and high-
frequency power amplifiers.
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2334
ABSOLUTE MAXIMUM RATINGS (Ta = 25°
°°
°C)
Parameter Symbol Ratings Unit
Collector to base voltage VCBO −100 V
Collector to emitter voltage VCEO −100 V
Emitter to base voltage VEBO −7.0 V
Collector current (DC) IC(DC) −7.0 A
Collector current (pulse) IC(pulse)*−15 A
Base current (DC) IB(DC) −3.5 A
Total power dissipation PT (Tc = 25 °C) 40 W
Total power dissipation PT (Ta = 25 °C) 1.5 W
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
*PW ≤ 300
µ
s, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Pin Connection
Data Sheet D16118EJ2V0DS
2
2SA1010
ELECTRICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Collector to emitter voltage VCEO(SUS) IC = −5.0 A, IB1 = −0.5 A, L = 1 mH −100 V
Collector to emitter voltage VCEX(SUS)1 IC = −5.0 A, IB1 = −IB2 = −0.5 A,
VBE(OFF) = 5.0 V, L = 180
µ
H, clamped
−100 V
Collector to emitter voltage VCEX(SUS)2 IC = −10 A, IB1 = −1.0 A, IB2 = −0.5 A,
VBE(OFF) = 5.0 V, L = 180
µ
H, clamped
−100 V
Collector cutoff current ICBO VCB = −100 V, IE = 0 −10
µ
A
Collector cutoff current ICER VCE = −100 V, RBE = 51 Ω, Ta = 125 °C−1.0 mA
Collector cutoff current ICEX1 VCE = −100 V, VBE(OFF) = 1.5 V −10
µ
A
Collector cutoff current ICEX2 VCE = −100 V, VBE(OFF) = 1.5 V,
Ta = 125 °C
−1.0 mA
Emitter cutoff current IEBO VEB = −5.0 V, IC = 0 −10
µ
A
DC current gain hFE1 VCE = −5.0 V, IC = −0.5 A* 40 200
DC current gain hFE2 VCE = −5.0 V, IC = −3.0 A* 40 200
DC current gain hFE3 VCE = −5.0 V, IC = −5.0 A* 20
Collector saturation voltage VCE(sat) IC = −5.0 A, IB = −0.5 A* −0.6 V
Base saturation voltage VBE(sat) IC = −5.0 A, IB = −0.5 A* −1.5 V
Turn-on time ton 0.5
µ
s
Storage time tstg 1.5
µ
s
Fall time tf
IC = −5.0 A, RL = 10 Ω,
IB1 = −IB2 = −0.5 A, VCC ≅ −50 V
Refer to the test circuit.
0.5
µ
s
* Pulse test PW ≤ 350
µ
s, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking M L K
hFE2 40 to 80 60 to 120 100 to 200
TYPICAL CHARACTERISTICS (Ta = 25°
°°
°C)
Total Power Dissipation PT (W)
Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
2 mm aluminum board,
no insulating board,
grease coating, natural
air cooling
With infinite heatsink
Data Sheet D16118EJ2V0DS 3
2SA1010
Case Temperature TC (°C)
IC Derating dT (%)
Transient Thermal Resistance
θ
th(j-c) (°C/W)
Pulse Width PW (ms)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
Collector Current IC (A)
Collector Current IC (A)
Base Saturation Voltage VBE(sat) (V)
Collector Saturation Voltage VCE(sat) (V)
Collector Current IC (A)
DC Current Gain hFE
Data Sheet D16118EJ2V0DS
4
2SA1010
Collector Current IC (A)
Turn-On Time ton (
µ
s)
StorageTime tstg (
µ
s)
Fall Time tf (
µ
s)
Base current
waveform
Collector current
waveform
Data Sheet D16118EJ2V0DS 5
2SA1010
[MEMO]
2SA1010
M8E 00. 4
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