CPDFR5V0H-HF
Page 1
Maximum Rating and Electrical Characteristics
O
(at TA=25 C unless otherwise noted)
Comchip Technology CO., LTD.
REV: B
QW-G7053
Symbol Typ
Parameter Min
Max
Unit
Junction capacitance
Conditions
Diode breakdown voltage VBD V
IR = 1mA
Leakage current ILuA
20
CTpF
VR =0V,f =1MHz
5.5 7.0
1.0
VR = 5V
ESD capability kV
30
Storage temperature
Operation temperature 125 °C
TSTG
Tj
°C
150
-55
ESD
IEC 61000-4-2(air)
IEC 61000-4-2(contact) 30
Peak Pulse Power
Clamping Voltage 11 V
PPP
Vc
140
IPP = 7 A, tp=8/20us
IPP = 1 A, tp=8/20us
VcV
20
TP=8/20us W
ESD kV
SMD ESD Protection Diode
RoHS Device
Halogen Free
Features
-Bi-directional ESD protection
-IEC 61000-4-5 (surge) ; IPP=7A
-IEC 61000-4-2 (ESD) ; ±30KV(contact)
Mechanical data
-Case: Standard package , 1005/SOD-323F
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750, method 2026.
-Marking Code: E05
-Mounting position: Any.
-Weight: 0.003 gram (approx.).
-Low clamping voltage
-Low leakage current
0.102(2.60)
0.095(2.40)
0.051(1.30)
0.043(1.10)
0.035(0.90)
0.027(0.70)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.040(1.00) Typ.
1005/SOD-323F
Company reserves the right to improve product design , functions and reliability without notice.