RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
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Revision: 11-Dec-13 1Document Number: 88697
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Junction Fast Switching Rectifier
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
FEATURES
Superectifier structure for high reliability condition
Ideal for automated placement
Fast switching for high efficiency
Low leakage current
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
AEC-Q101 qualified
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-214BA, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Two bands indicate cathode end - 1st band
denotes device type and 2nd band denotes repetitive peak
reverse voltage rating
PPRIMARY CHARACTERISTICS
IF(AV) 1.0 A
VRRM 50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
IFSM 30 A
VF1.3 V
trr 150 ns, 250 ns, 500 ns
TJ max. 175 °C
Package DO-214BA (GF1)
Diode variations Single
DO-214BA (GF1)
SUPERECTIFIER®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Device marking code RA RB RD RG RJ RK RM
Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V
Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V
Maximum average forward rectified current
at TL = 120 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 30 A
Maximum full load reverse current, full cycle
average TA = 55 °C IR(AV) 50 μA
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com Vishay General Semiconductor
Revision: 11-Dec-13 2Document Number: 88697
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Maximum
instantaneous
forward voltage
1.0 A VF1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 125 °C 100
Typical reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 150 250 500 ns
Typical junction
capacitance 4.0 V, 1 MHz CJ8.5 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M UNIT
Typical thermal resistance RJA (1) 80 °C/W
RJL (1) 28
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
RGF1J-E3/67A 0.104 67A 1500 7" diameter plastic tape and reel
RGF1J-E3/5CA 0.104 5CA 6500 13" diameter plastic tape and reel
RGF1JHE3/67A (1) 0.104 67A 1500 7" diameter plastic tape and reel
RGF1JHE3/5CA (1) 0.104 5CA 6500 13" diameter plastic tape and reel
0.50
100 120 140 160 180
0
1.00
Lead Temperature (°C)
Average Forward Rectified Current (A)
60 Hz
Resistive or
Inductive Load
0.25
0.75
1.25
P.C.B. Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
110 100
0
5
10
15
20
25
30
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
RGF1A, RGF1B, RGF1D, RGF1G, RGF1J, RGF1K, RGF1M
www.vishay.com Vishay General Semiconductor
Revision: 11-Dec-13 3Document Number: 88697
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
020 40 60 80 100
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (µA)
T
J
= 100 °C
T
J
= 25 °C
T
J
= 125 °C
110 100
1
10
100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 110 100
0.1
1
10
100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.167 (4.24)
0.187 (4.75)
0.0065 (0.17)
0.015 (0.38)
0.030 (0.76)
0.060 (1.52)
0.196 (4.98)
0.226 (5.74)
0.094 (2.39)
0.114 (2.90)
0.100 (2.54)
0.118 (3.00)
0.040 (1.02)
0.066 (1.68)
0.098 (2.49)
0.108 (2.74)
0.006 (0.152) TYP.
DO-214BA (GF1)
0.076 (1.93)
MAX.
0.220 (5.58)
REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
Cathode Band
0.066 (1.68)
MIN.
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Revision: 02-Oct-12 1Document Number: 91000
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