2011-07-11
Rev 2.7 Page 1
BSS84P
SIPMOS Small-Signal-Transistor Product Summary
VDS -60 V
RDS(on) 8
W
ID-0.17 A
Feature
·
P-Channel
·
Enhancement mode
·
Logic Level
·
Avalanche rated
·
dv/dt rated
PG-SOT-23
1
2
3
VPS05161
Gate
pin1
Drain
pin 3
Source
pin 2
Marking
YBs
Type
Package
Tape and Reel
BSS84P
PG-SOT-23
H6327:3000pcs/r.
Maximum Ratings, at
TA
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.17
-0.14
A
Pulsed drain current
T
A
=25°C
I
D puls
-0.68
Avalanche energy, single pulse
I
D
=-0.17 A , V
DD
=-25V, R
GS
=25
W
E
AS
2.6 mJ
Avalanche energy, periodic limited by T
jmax
E
AR
0.036
Reverse diode dv/dt
IS=-0.17A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
dv/dt-6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
TA=25°C
P
tot
0.36
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
BSS84P PG-SOT-23H6433:10000pcs/r.
YBs
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
ESD Class
JESD22-A114-HBM
Class 0
2011-07-11
Rev 2.7 Page 2
BSS84P
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
(Pin 3) RthJS - - 200 K/W
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 1)
RthJA
-
-
-
-
350
300
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V(BR)DSS -60 - - V
Gate threshold voltage, VGS = VDS
ID=-20µA
VGS(th) -1 -1.5 -2
Zero gate voltage drain current
VDS=-60V, VGS=0, TA=25°C
VDS=-60V, VGS=0, TA=125°C
IDSS
-
-
-0.1
-10
-1
-100
µA
Gate-source leakage current
VGS=-20V, VDS=0
IGSS - -10 -100 nA
Drain-source on-state resistance
VGS=-4.5V, ID=-0.14A
RDS(on) - 8 12
W
Drain-source on-state resistance
VGS=-10V, ID=-0.17A
RDS(on) - 5.8 8
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
2011-07-11
Rev 2.7 Page 3
BSS84P
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance gfs VDS
£
2*ID*RDS(on)max ,
ID=-0.14A
0.065 0.13 - S
Input capacitance Ciss VGS=0, VDS=-25V,
f=1MHz
- 15 19 pF
Output capacitance Coss - 6 8
Reverse transfer capacitance Crss - 2 3
Turn-on delay time td(on) VDD=-30V, VGS=-4.5V,
ID=-0.14A, RG=25
W
- 6.7 10 ns
Rise time tr- 16.2 24.3
Turn-off delay time td(off) - 8.6 12.9
Fall time tf- 20.5 30.8
Gate Charge Characteristics
Gate to source charge Qgs VDD=-48V, ID=-0.17A - 0.25 0.37 nC
Gate to drain charge Qgd - 0.3 0.45
Gate charge total QgVDD=-48V, ID=-0.17A,
VGS=0 to -10V
- 1 1.5
Gate plateau voltage V(plateau) VDD=-48V, ID=-0.17A - -3.42 - V
Reverse Diode
Inverse diode continuous
forward current ISTA=25°C - - -0.17 A
Inv. diode direct current, pulsedISM - - -0.68
Inverse diode forward voltage VSD VGS=0, IF=-0.17A - -0.93 -1.24 V
Reverse recovery time trr VR=-30V, IF=lS,
diF/dt=100A/µs
- 23 34 ns
Reverse recovery charge Qrr - 10 15 nC
2011-07-11
Rev 2.7 Page 4
BSS84P
1 Power dissipation
Ptot = f (TA)
0 20 40 60 80 100 120 °C 160
TA
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38 BSS 84 P
P
tot
2 Drain current
ID = f (TA)
parameter: VGS
³
10 V
0 20 40 60 80 100 120 °C 160
TA
0
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0.14
A
-0.18 BSS 84 P
I
D
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 -1 -10 0 -10 1 -10 2
VVDS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS 84 P
I
D
R
DS(on)
= V
DS
/ I
D
DC
10 ms
1 ms
tp = 170.0µs
4 Transient thermal impedance
ZthJA = f (tp)
parameter : D = tp/T
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
BSS 84 P
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-07-11
Rev 2.7 Page 5
BSS84P
5 Typ. output characteristic
ID = f (VDS)
parameter: Tj = 25 °C
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4 V-5
VDS
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
A
-0.4 BSS 84 P
I
D
VGS [V]
a
a -2.5
b
b -3.0
c
c -3.5
d
d -4.0
ee -4.5
f
f -5.0
g
g -5.5
h
h -6.0
i
i -6.5
j
j -7.0
k
k -8.0
l
Ptot = 0.36W
l -10.0
6 Typ. drain-source on resistance
RDS(on) = f (ID)
parameter: VGS; Tj = 25 °C
0 -0.04-0.08-0.12-0.16 -0.2 -0.24-0.28-0.32A-0.38
ID
0
2
4
6
8
10
12
14
16
18
20
22
W
26 BSS 84 P
R
DS(on)
VGS [V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
7 Typ. transfer characteristics
ID= f ( VGS ); |VDS|
³
2 x |ID| x RDS(on)max
parameter: Tj = 25 °C
0 1 2 3 4 V6
- VGS
0
0.05
0.1
0.15
0.2
0.25
0.3
A
0.4
- ID
8 Typ. forward transconductance
gfs = f(ID)
parameter: Tj = 25 °C
0 0.04 0.08 0.12 0.16 A0.22
-ID
0
0.02
0.04
0.06
0.08
0.1
0.12
S
0.16
gfs
2011-07-11
Rev 2.7 Page 6
BSS84P
9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = -0.17 A, VGS = -10 V
-60 -20 20 60 100 °C 180
TA
0
2
4
6
8
10
12
14
16
18
W
21 BSS 84 P
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS
-60 -20 20 60 100 °C 160
TA
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
- VGS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz
0 5 10 V20
- VDS
0
10
1
10
2
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3
VSD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS 84 P
I
F
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
2011-07-11
Rev 2.7 Page 7
BSS84P
13 Typ. avalanche energy
EAS = f (TA), parameter:
ID = -0.17 A , VDD = -25 V, RGS = 25
W
25 45 65 85 105 125 °C 165
TA
0
0.5
1
1.5
2
mJ
3
EAS
14 Typ. gate charge
VGS = f (QGate)
parameter: ID = -0.17 A pulsed; Tj = 25 °C
0 0.2 0.4 0.6 0.8 1 1.2 nC 1.5
QGate
0
-2
-4
-6
-8
-10
-12
V
-16 BSS 84 P
V
GS
0,8 VDS max
DS max
V
0,2
15 Drain-source breakdown voltage
V(BR)DSS = f (TA)
-60 -20 20 60 100 °C 180
TA
-54
-56
-58
-60
-62
-64
-66
-68
V
-72 BSS 84 P
V
(BR)DSS
Published by
Infineon Tech nologies AG
81726 Munich, German y
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values stated her e in and/or any inf o r mation r e garding the application of the device,
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2011-07-11
Rev 2.7 Page 7
BSS84P
W