BSS84DW
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
1
2
3
4
5
6
1
2
3
4
5
6
FEATURES
APPLICATIONS
MAXIMUM RATINGS
Rating Symbol Value Units
This device contains two electrically-isolated P-channel, enhancement-mode
MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device
is ideal for portable applications where board space is at a premium.
Low On-Resistance
Available in lead-free plating (100% matte tin finish)
Low Gate Threshold Voltage
Fast Switching
Switching Power Supplies
Hand-Held Computers, PDAs
Drain-Source Voltage
Drain-Gate Voltage (Note 1)
Gate-Source Voltage
Drain Current
Total Power Dissipation (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
8/12/2005 Page 1 www.panjit.com
- 50 V
V- 50
V± 20
mA130
200 mW
°C-55 to +150
°C-55 to +150
V
V
V
I
P
T
T
DSS
DGR
GSS
D
D
stg
T = 25°C Unless otherwise noted
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Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout
SOT- 363
THERMAL CHARACTERISTICS
Characteristic Symbol Units
thja
Thermal Resistance, Junction to Ambient (Note 2) 625
Value
R°C/W
123
654
Note 1. R < 20K ohms
GS
MARKING CODE: S84
DS
V = -25V, I = -0.1A
DSGS
V = ±20V, V = 0V
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8/12/2005 Page 2
Electrical Characteristics (Each Device)
Parameter Symbol Min Units
Drain-Source Breakdown Voltage
T = 25°C Unless otherwise noted
Conditions Typ Max
BVDSS D
I = -250µA, V = 0V
Zero Gate Voltage Drain Curren
t
IDS
S
V = -50V, V = 0V, T =25°C
DS
Gate-Body Leakage
-50 - - V
- - -15
- - -60 µA
- ±10 nA
-
BSS84DW
-0.1--
OFF CHARACTERISTICS (Note 3)
IGSS
DS
DS
V = -50V, V = 0V, T =125°C
V = -25V, V = 0V, T =25°C
GS
GS
GS
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J
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J
D
Parameter Symbol Min Units
Gate Threshold Voltage
Conditions Typ Max
VGS(th) DS
V = V , I = -1mA
Forward Transconductance
-0.8 -1.44 -2.0 V
ON CHARACTERISTICS (Note 3)
gFS
GS D
0.05 - - S
Static Drain-Source On-Resistanc
e
RDS(ON) GS
V = -5V, I = -0.1A - 3.8 10 Ohms
D
Parameter Symbol Min Units
Input Capacitance
Conditions Typ Max
Ciss
Reverse Transfer Capacitance
- - 45 pF
DYNAMIC CHARACTERISTICS
Crss --12pF
Output Capacitance Coss
DS
V = -25V,
V = 0V,
f = 1.0MHz
- - 25 pF
GS
Parameter Symbol Min Units
Turn-On Delay Time
Conditions Typ Max
tD(ON) - 7.5 - ns
SWITCHING CHARACTERISTICS
Turn-Off Delay Time - 25 - ns
tD(OFF)
V = -30V, I = -0.27A,
R = 50ohm, V = -10V
DD D
GEN GS
Note 3. Short duration test pulse used to minimize self-heating
GS
BSS84DW
0.01
0.1
1
10
0.4 0.6 0.8 1 1.2 1.4
-VSD - Source-to-Drain Voltage (V)
-IS - Source Current (A)
25oC
VGS = 0V
0.8
0.9
1
1.1
1.2
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature (oC)
VGS Threshold Voltage (NORMALIZE
D
ID =250µA
0
2
4
6
8
10
246810
-VGS - Gate-to-Source Voltage (V)
RDS(ON)
- On-Resistance (Ohms
)
Ids=-50mA
Ids =- 500mA
0
2
4
6
8
10
0 0.2 0.4 0.6 0.8 1
-ID - Drain Current (A)
RDS(ON)
- On-Resistance (Ohms
)
V
GS
= 4.5V
VGS=10.0V
0
0.2
0.4
0.6
0.8
1
01234567
-VGS - Gate-to-Source Voltage (V)
-ID
- Drain Source Current (A
)
VDS =10V
25oC
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
012345
-VDS - Drain-to-Source Voltage (V)
-ID
- Drain-to-Source Current (A
VGS= 6V, 7V, 8V, 9V, 10V
3.0V
4.0V
5.0V
Electrical Characteristic Curves (Each Device) T = 25°C Unless otherwise noted
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Fig. 1. Output Characteristics Fig. 2. Transfer Characteristics
Fig. 6. Sourse-Drain Diode Forward VoltageFig. 5. Threshold Voltage vs. Temperature
Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage
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BSS84DW
ORDERING INFORMATION
BSS84DW T/R7 - 7 inch reel, 3K units per reel
BSS84DW T/R13 - 13 inch reel, 10K units per reel
Copyright PanJit International, Inc 2005
The information presented in this document is believed to be accurate and reliable. The specifications and information
herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the
suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or
systems. Pan Jit does not convey any license under its patent rights or rights of others.
PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS