DMN3010LSS
Document number: DS31259 Rev. 6 - 2 1 of 5
www.diodes.com November 2008
© Diodes Incorporated
DMN3010LSS
NEW PRODUCT
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• 9mΩ @ VGS = 10V
• 13mΩ @ VGS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072g (approximate)
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 1) Steady
State TA = 25°C
TA = 70°C ID 16
13 A
Pulsed Drain Current (Note 3) IDM 64 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 1) PD 2.5 W
Thermal Resistance, Junction to Ambient R
θ
JA 50 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB, with RθJA = 50°C
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SOP-8L
TOP VIEW
Internal Schematic
TOP VIEW
S
D
D
G
D
D
S
S
DMN3010LSS
Document number: DS31259 Rev. 6 - 2 2 of 5
www.diodes.com November 2008
© Diodes Incorporated
DMN3010LSS
NEW PRODUCT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS 30 ⎯ ⎯ V VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1 μA VDS = 30V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS
(
th
)
1.1 ⎯ 2.0 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯
⎯ 9
13 mΩ VGS = 10V, ID = 16A
VGS = 4.5V, ID = 10A
Forward Transconductance gfs ⎯ 16 ⎯ S VDS = 10V, ID = 12A
Diode Forward Voltage (Note 5) VSD 0.5 ⎯ 1.2 V
VGS = 0V, IS = 16A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 2096 ⎯ pF VDS = 15V, VGS = 0V
f = 1.0MHz
Output Capacitance Coss ⎯ 329 ⎯ pF
Reverse Transfer Capacitance Crss ⎯ 258 ⎯ pF
Gate Resistance RG ⎯ 1.2 ⎯ Ω V
GS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge Qg ⎯ 22.4
43.7 ⎯ nC
VDS = 15V, VGS = 4.5V, ID = 16A
VDS = 15V, VGS = 10.0V, ID = 16A
Gate-Source Charge Q
g
s ⎯ 5.5 ⎯ VDS = 15V, VGS = 10V, ID = 16A
Gate-Drain Charge Q
g
d ⎯ 12.6 ⎯ VDS = 15V, VGS = 10V, ID = 16A
Turn-On Delay Time td
(
on
)
⎯ 7.11 ⎯
ns VGS = 10V, VDS = 15V,
RD = 15Ω, RG = 6Ω
Rise Time t
r
⎯ 10.3 ⎯
Turn-Off Delay Time td
(
off
)
⎯ 58.3 ⎯
Fall Time tf ⎯ 32.1 ⎯
Notes: 5. Short duration pulse test used to minimize self-heating effect.
I , DRAIN CURRENT (A)
D
F ig . 1 Typical Output Ch ar acterist ics
V , DRAIN-SOURCE VOL TAGE (V)
DS
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V = 2.5V
GS
V = 4.5V
GS
V = 10V
GS
V = 1.5V
GS
V = 3.0V
GS
0
2
4
6
8
10
12
14
16
18
20
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
I, S
O
U
R
C
E
C
U
R
R
EN
T
(A )
S
V , SOURCE-DRAIN VOL TAGE (V)
SD
Fig. 2 Source Current vs. Source-Drain Voltage
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
DMN3010LSS
Document number: DS31259 Rev. 6 - 2 3 of 5
www.diodes.com November 2008
© Diodes Incorporated
DMN3010LSS
NEW PRODUCT
Fig . 3 Drai n- Sou r ce On- Resis tance vs. D r ain Curren t
6
8
10
12
14
16
18
20
02468101214161820
I , DRAIN CURRENT (A)
D
R , STATIC DRAIN-SOURCE
ON-RESISTANCE (m )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Fig. 4 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERA TURE (°C)
A
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
V = 4.5V
I = 10A
GS
D
V = 10V
I = 16A
GS
D
R
, S
T
A
T
I
C
D
R
AI
N
-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
C, CAPACITANCE (pF)
Fig. 5 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
10,000
0 5 10 15 20 25 30
C
iss
C
oss
C
rss
V
,
G
A
T
E
T
H
R
ES
H
O
LD V
O
L
T
A
G
E (V
)
GS(TH)
Fig . 6 Gat e Thresh old Variati on vs. Ambient Te m perature
T , AMBIENT TEMPERATURE (°C)
A
-50 -25 0 25 50 75 100 125 150
1
1.3
1.6
1.9
2.2
2.5
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
I, S
O
U
R
C
E
C
U
R
R
E
N
T
(A)
S
Fig. 7 Diode Forward Voltage vs. Current
0.0001
0.001
0.01
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
DMN3010LSS
Document number: DS31259 Rev. 6 - 2 4 of 5
www.diodes.com November 2008
© Diodes Incorporated
DMN3010LSS
NEW PRODUCT
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
Fig . 8 Tran sient Th er m al Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) * R
R = 88°C/W
θθ
θ
JA JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
Ordering Information (Note 6)
Part Number Case Packaging
DMN3010LSS-13 SOP-8L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Package Outline Dimensions
SOP-8L
Dim Min Max
A - 1.75
A1 0.08 0.25
A2 1.30 1.50
A3 0.20 Typ.
b 0.3 0.5
D 4.80 5.30
E 5.79 6.20
E1 3.70 4.10
e 1.27 Typ.
h - 0.35
L 0.38 1.27
θ 0° 8°
All Dimensions in mm
Top View
Logo
Part no.
Year: "07" =2007
"08" =2008
Xth we ek: 01~52
1 4
8 5
N3010LS
YY WW
GAUGE PLAN E
SEATING PLAN E
DETAIL A
DETAIL A
E
E1
h
L
D
eb
A2
A1
A
45
°
7
°~
9
°
A3
0.254
DMN3010LSS
Document number: DS31259 Rev. 6 - 2 5 of 5
www.diodes.com November 2008
© Diodes Incorporated
DMN3010LSS
NEW PRODUCT
Suggested Pad Layout
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume an y liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages. LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
Dimensions Value (in mm)
Z 5.1
C 1.27
X 0.41
Y 1.0
Z
C
Y