TO -2 20A B BT137-600E 4Q Triac 12 June 2014 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits * * * * * * Direct triggering from low power drivers and logic ICs High blocking voltage capability Low holding current for low current loads and lowest EMI at commutation Planar passivated for voltage ruggedness and reliability Sensitive gate Triggering in all four quadrants 3. Applications * * General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM Conditions Min Typ Max Unit repetitive peak offstate voltage - - 600 V ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 C; state current tp = 20 ms; Fig. 4; Fig. 5 - - 65 A IT(RMS) RMS on-state current - - 8 A - 2.5 10 mA - 4 10 mA - 5 10 mA full sine wave; Tmb 102 C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 Scan or click this QR code to view the latest information for this product BT137-600E NXP Semiconductors 4Q Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G+; - 11 25 mA - 2.5 20 mA Tj = 25 C; Fig. 7 IH holding current VD = 12 V; Tj = 25 C; Fig. 9 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 mb Graphic symbol T2 sym051 T1 G 1 2 3 TO-220AB (SOT78) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT137-600E TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT137-600E/DG TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 BT137-600E/L01 TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 7. Marking Table 4. Marking codes Type number Marking code BT137-600E BT137-600E/DG BT137-600E/DG BT137-600E/L01 BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 2 / 13 BT137-600E NXP Semiconductors 4Q Triac 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb 102 C; Fig. 1; Min Max Unit - 600 V - 8 A - 65 A - 71 A Fig. 2; Fig. 3 ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 C; tp = 16.7 ms I t I t for fusing tp = 10 ms; SIN - 21 A s dIT/dt rate of rise of on-state current IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s; - 50 A/s - 50 A/s - 50 A/s - 10 A/s 2 2 2 T2+ G+ IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2+ GIT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- GIT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- G+ IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 C Tj junction temperature - 125 C BT137-600E Product data sheet over any 20 ms period All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 3 / 13 BT137-600E NXP Semiconductors 4Q Triac 003aae689 10 IT(RMS) (A) 8 IT(RMS) 6 15 4 10 2 5 (A) 20 0 - 50 Fig. 1. 003aae692 25 0 50 100 Tmb (C) 0 10- 2 150 10- 1 1 10 surge duration (s) f = 50 Hz Tmb 102 C RMS on-state current as a function of mounting base temperature; maximum values Fig. 2. RMS on-state current as a function of surge duration; maximum values 003aae690 12 conduction form angle factor (degrees) a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 Ptot (W) 8 = 180 120 90 60 30 4 0 0 2 4 6 8 IT(RMS) (A) 10 = conduction angle a = form factor = IT(RMS)/IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 4 / 13 BT137-600E NXP Semiconductors 4Q Triac 003aae691 103 ITSM IT ITSM (A) t tp Tj(init) = 25 C max 102 (1) (2) 10 10- 5 10- 4 10- 3 10- 2 10- 1 tp (s) tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values 003aae693 80 ITSM (A) 60 40 ITSM IT 20 t 1/f 0 Tj(init) = 25 C max 1 10 102 103 number of cycles 104 f = 50 Hz Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 5 / 13 BT137-600E NXP Semiconductors 4Q Triac 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base half cycle; Fig. 6 - - 2.4 K/W full cycle; Fig. 6 - - 2 K/W thermal resistance from junction to ambient in free air - 60 - K/W Rth(j-a) 003aae698 10 Zth(j-mb) (K/W) 1 unidirectional bidirectional 10-1 10-2 10-5 Fig. 6. 10-4 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to mounting base as a function of pulse width BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 6 / 13 BT137-600E NXP Semiconductors 4Q Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; - 2.5 10 mA - 4 10 mA - 5 10 mA - 11 25 mA - 3 25 mA - 14 35 mA - 3 25 mA - 4 35 mA Static characteristics IGT gate trigger current Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 C; Fig. 8 IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 2.5 20 mA VT on-state voltage IT = 10 A; Tj = 25 C; Fig. 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 C; - 0.7 1 V 0.25 0.4 - V VD = 600 V; Tj = 125 C - 0.1 0.5 mA VDM = 402 V; Tj = 125 C; (VDM = 67% - 50 - V/s - 2 - s Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 C; Fig. 11 ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 12 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/s BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 7 / 13 BT137-600E NXP Semiconductors 4Q Triac 003aae809 3 IL IL(25C) IGT IGT (25 C) (1) (2) 2 2 (3) (4) (1) (2) (3) 1 0 - 60 1 (4) - 10 40 90 Tj (C) 0 - 60 140 (1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. 003aae697 3 Fig. 8. - 10 40 90 Tj (C) 140 Normalized latching current as a function of junction temperature Normalized gate trigger current as a function of junction temperature 003aae699 2.0 003aae696 30 IH IH(25C) IT (A) 1.5 20 1.0 10 0.5 0 - 60 Fig. 9. (1) - 10 40 90 Tj (C) 0 140 0 (2) 1 (3) 2 VT (V) 3 Vo = 1.264 V Normalized holding current as a function of junction temperature Rs = 0.038 (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig. 10. On-state current as a function of on-state voltage BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 8 / 13 BT137-600E NXP Semiconductors 4Q Triac 003aae694 1.6 VGT VGT (25C) 1.2 0.8 0.4 0 - 60 - 10 40 90 Tj (C) 140 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 9 / 13 BT137-600E NXP Semiconductors 4Q Triac 11. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3x) b2(2) (2x) 1 2 3 b(3x) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 12. Package outline TO-220AB (SOT78) BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 10 / 13 BT137-600E NXP Semiconductors 4Q Triac In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................6 10 Characteristics ....................................................... 7 11 Package outline ................................................... 10 12 12.1 12.2 12.3 12.4 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12 (c) NXP Semiconductors N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 12 June 2014 BT137-600E Product data sheet All information provided in this document is subject to legal disclaimers. 12 June 2014 (c) NXP Semiconductors N.V. 2014. All rights reserved 13 / 13 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: NXP: BT137-600E/L01,127 BT137-600E,127 BT137-600E/DG